Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    "RF SWITCHES" B237 023 Search Results

    "RF SWITCHES" B237 023 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    HN1D05FE Toshiba Electronic Devices & Storage Corporation Switching Diode, 400 V, 0.1 A, ES6 Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    LBAA0QB1SJ-295 Murata Manufacturing Co Ltd SX1262 MODULE WITH OPEN MCU Visit Murata Manufacturing Co Ltd
    GRM-KIT-OVER100-DE-D Murata Manufacturing Co Ltd 0805-1210 over100uF Cap Kit Visit Murata Manufacturing Co Ltd

    "RF SWITCHES" B237 023 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MS3113H-10-6P

    Abstract: MS3116E-10-6S transistor b237 B237 DC-12 "RF Switches" b237 023
    Text: Wireless Products Electromechanical RF Switches Active Components Passive Components RF Radiation Safety Products Power Meters/Monitors Main Menu SPDT Switches Series 023 SPDT / DC-12.4 GHz / N, TNC RF PERFORMANCE Frequency Range GHz DC-3 3-8 8-12.4 VSWR (Max)


    Original     		DC-12 180mA 200mA MS3113H-10-6P MS3116E-10-6S transistor b237 B237 "RF Switches" b237 023 PDF

    B237

    Abstract: MS3112E ms3116E MS3116E14-18s vmosfet
    Text: Wireless Products Electromechanical RF Switches Active Components Passive Components RF Radiation Safety Products Power Meters/Monitors Main Menu Multiposition Switches — SP3T-SP6T Series 034-064 SP3T-SP6T / DC-6 GHz / SC RF PERFORMANCE Frequency Range GHz


    Original     		180mA 100mA B237 MS3112E ms3116E MS3116E14-18s vmosfet PDF