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    "ULTRA LOW GATE CHARGE" "ULTRA LOW ON RESISTANCE Search Results

    "ULTRA LOW GATE CHARGE" "ULTRA LOW ON RESISTANCE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    "ULTRA LOW GATE CHARGE" "ULTRA LOW ON RESISTANCE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: STS5N15M3 N-channel 150V - 45mΩ - 4.5A - SO-8 Ultra low gate charge MDmesh III Power MOSFET PRELIMINARY DATA Features Type VDSS RDS on ID STS5N15M3 150V <0.057Ω 4.5A • Low on-resistance ■ Low input capacitance and gate charge ■ Low gate input resistance


    Original     		STS5N15M3 STS5N15M3 PDF

    JESD97

    Abstract: No abstract text available
    Text: STSJ25N15M3 N-channel 150V - 45mΩ - 5A - PowerSO-8 Ultra low gate charge MDmesh™ III Power MOSFET PRELIMINARY DATA Features Type VDSS RDS on ID STSJ25N15M3 150V <0.057Ω 5A • Low on-resistance ■ Low input capacitance and gate charge ■ Low gate input resistance


    Original     		STSJ25N15M3 JESD97 PDF

    MDMESH

    Abstract: STS5N15M3 JESD97
    Text: STS5N15M3 N-channel 150 V, 45 mΩ, 5 A, SO-8 ultra low gate charge MDmesh III Power MOSFET Features Type VDSS RDS on max ID STS5N15M3 150 V < 0.057 Ω 5A • Low on-resistance ■ Low input capacitance and gate charge ■ Low gate input resistance ■


    Original     		STS5N15M3 MDMESH STS5N15M3 JESD97 PDF

    JESD97

    Abstract: STS5N15M3
    Text: STS5N15M3 N-channel 150 V, 45 mΩ, 5 A, SO-8 ultra low gate charge MDmesh III Power MOSFET Features Type VDSS RDS on max ID STS5N15M3 150 V < 0.057 Ω 5A • Low on-resistance ■ Low input capacitance and gate charge ■ Low gate input resistance ■


    Original     		STS5N15M3 JESD97 STS5N15M3 PDF

    68ro

    Abstract: STV160NF03LA BSH5
    Text: STV160NF03LA N-CHANNEL 30V - 0.0021Ω - 160A PowerSO-10 STripFET POWER MOSFET TYPE STV160NF03LA VDSS RDS on ID 30 V < 0.003 Ω 160 A TYPICAL RDS(on) = 0.0021 Ω LOW THRESHOLD DRIVE ULTRA LOW ON-RESISTANCE ULTRA FAST SWITCHING 100% AVALANCHE TESTED VERY LOW GATE CHARGE


    Original     		STV160NF03LA PowerSO-10 PowerSO-10 STV160NF03LA 68ro BSH5 PDF

    STV160NF03L

    Abstract: No abstract text available
    Text: STV160NF03L N-CHANNEL 30V - 0.0019Ω - 160A PowerSO-10 STripFET POWER MOSFET TYPE STV160NF03L VDSS RDS on ID 30 V < 0.0028 Ω 160 A TYPICAL RDS(on) = 0.0019 Ω LOW THRESHOLD DRIVE ULTRA LOW ON-RESISTANCE ULTRA FAST SWITCHING 100% AVALANCHE TESTED VERY LOW GATE CHARGE


    Original     		STV160NF03L PowerSO-10 PowerSO-10 STV160NF03L PDF

    PI5101

    Abstract: No abstract text available
    Text: PI5101   RDS on FETTM Series 360μΩ, 5V/60A N-Channel MOSFET Product Summary Features Ultra Low “micro-Ohm” RDS(on) Extremely Low Gate Charge Very Low Gate Resistance High Density, Low Profile Very Low Package Inductance Low Thermal Resistance


    Original     		PI5101 V/60A 60ADC PI5101 PI5101-00-LGIZ PDF

    APT94N65B2C3

    Abstract: APT94N65B2C3G APT94N65B2
    Text: 650V 94A APT94N65B2C3 APT94N65B2C3G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. COOLMOS Super Junction MOSFET Power Semiconductors T-MaxTM • Ultra Low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated D


    Original     		APT94N65B2C3 APT94N65B2C3G* APT94N65B2C3S O-247 APT94N65B2C3 APT94N65B2C3G APT94N65B2 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT97N65B2C6 APT97N65LC6 650V 97A 0.041 APT97N65B2C6 COOLMOS Super Junction MOSFET Power Semiconductors T-Max TO-264 • Ultra Low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated APT97N65LC6 • Extremedv/dt Rated


    Original     		APT97N65B2C6 APT97N65LC6 O-264 APT97N65B2 O-247 PDF

    SIPC05N60S5

    Abstract: transistor AI 232
    Text: Preliminary SIPC05N60S5 Fast CoolMOS TM Power Transistor FEATURES: • New revolutionary high voltage technology • Ultra low gate charge • Worlbest RDS on per chip area • Ultra low effective capacitances • Improved noise immunity Chip Type SIPC05N60S5


    Original     		SIPC05N60S5 5313S, SIPC05N60S5 transistor AI 232 PDF

    SIPC69N60C2

    Abstract: No abstract text available
    Text: Preliminary SIPC69N60C2 Fast CoolMOS TM Power Transistor FEATURES: • New revolutionary high voltage technology • Ultra low gate charge • Worlbest RDS on per chip area • Ultra low effective capacitances • Improved noise immunity Chip Type SIPC69N60C2


    Original     		SIPC69N60C2 Q67050A4073-A001 5443-N, SIPC69N60C2 PDF

    SIPC26N60C2

    Abstract: No abstract text available
    Text: Preliminary SIPC26N60C2 Fast CoolMOS TM Power Transistor FEATURES: • New revolutionary high voltage technology • Ultra low gate charge • Worlbest RDS on per chip area • Ultra low effective capacitances • Improved noise immunity Chip Type SIPC26N60C2


    Original     		SIPC26N60C2 Q67050A4087-A001 5433N, SIPC26N60C2 PDF

    SIPC10N60S5

    Abstract: No abstract text available
    Text: Preliminary SIPC10N60S5 Fast CoolMOS TM Power Transistor FEATURES: • New revolutionary high voltage technology • Ultra low gate charge • Worlbest RDS on per chip area • Ultra low effective capacitances • Improved noise immunity Chip Type SIPC10N60S5


    Original     		SIPC10N60S5 Q67050A4072-A001 5353-N, SIPC10N60S5 PDF

    SIPC10N60C2

    Abstract: No abstract text available
    Text: Preliminary SIPC10N60C2 Fast CoolMOS TM Power Transistor FEATURES: • New revolutionary high voltage technology • Ultra low gate charge • Worlbest RDS on per chip area • Ultra low effective capacitances • Improved noise immunity Chip Type SIPC10N60C2


    Original     		SIPC10N60C2 Q67050A4090-A001 5353P, SIPC10N60C2 PDF

    5423S

    Abstract: SIPC06N60S5
    Text: Preliminary SIPC06N60S5 Fast CoolMOS TM Power Transistor FEATURES: • New revolutionary high voltage technology • Ultra low gate charge • Worlbest RDS on per chip area • Ultra low effective capacitances • Improved noise immunity Chip Type SIPC06N60S5


    Original     		SIPC06N60S5 5423S, 5423S SIPC06N60S5 PDF

    SIPC03N60S5

    Abstract: No abstract text available
    Text: Preliminary SIPC03N60S5 Fast CoolMOS TM Power Transistor FEATURES: • New revolutionary high voltage technology • Ultra low gate charge • Worlbest RDS on per chip area • Ultra low effective capacitances • Improved noise immunity Chip Type SIPC03N60S5


    Original     		SIPC03N60S5 80mm2 5343N, SIPC03N60S5 PDF

    SIPC05N60S5

    Abstract: No abstract text available
    Text: Preliminary SIPC05N60S5 Fast CoolMOS TM Power Transistor FEATURES: • New revolutionary high voltage technology • Ultra low gate charge • Worlbest RDS on per chip area • Ultra low effective capacitances • Improved noise immunity Chip Type SIPC05N60S5


    Original     		SIPC05N60S5 5313N, SIPC05N60S5 PDF

    SIPC03N60S5

    Abstract: No abstract text available
    Text: Preliminary SIPC03N60S5 Fast CoolMOS TM Power Transistor FEATURES: • New revolutionary high voltage technology • Ultra low gate charge • Worlbest RDS on per chip area • Ultra low effective capacitances • Improved noise immunity Chip Type SIPC03N60S5


    Original     		SIPC03N60S5 80mm2 5343S, SIPC03N60S5 PDF

    SIPC14N60S5

    Abstract: No abstract text available
    Text: Preliminary SIPC14N60S5 Fast CoolMOS TM Power Transistor FEATURES: • New revolutionary high voltage technology • Ultra low gate charge • Worlbest RDS on per chip area • Ultra low effective capacitances • Improved noise immunity Chip Type SIPC14N60S5


    Original     		SIPC14N60S5 Q67050-A4093 5363S, SIPC14N60S5 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary SIPC10N60S5 Fast CoolMOS TM Power Transistor FEATURES: • New revolutionary high voltage technology • Ultra low gate charge • Worlbest RDS on per chip area • Ultra low effective capacitances • Improved noise immunity Chip Type SIPC10N60S5


    Original     		SIPC10N60S5 Q67050A4072-A001 5353-N, PDF

    SIPC61N60S5

    Abstract: No abstract text available
    Text: Preliminary SIPC61N60S5 Fast CoolMOS TM Power Transistor FEATURES: • New revolutionary high voltage technology • Ultra low gate charge • Worlbest RDS on per chip area • Ultra low effective capacitances • Improved noise immunity Chip Type SIPC61N60S5


    Original     		SIPC61N60S5 Q67041A4009-A001 5413-N, SIPC61N60S5 PDF

    SIPC14N60C2

    Abstract: 5363P
    Text: Preliminary SIPC14N60C2 Fast CoolMOS TM Power Transistor FEATURES: • New revolutionary high voltage technology • Ultra low gate charge • Worlbest RDS on per chip area • Ultra low effective capacitances • Improved noise immunity Chip Type SIPC14N60C2


    Original     		SIPC14N60C2 Q67050A4094-A001 5363P, SIPC14N60C2 5363P PDF

    55n10

    Abstract: 75n05 OM55N10NK OM60N10NK OM75N05NK OM75N06NK
    Text: OM55N1ÛNK OM75N05NK OM60N10NK OM75NQ6NK LOW VOLTAGE, LOW IN A TO-3 PACKAGE POWER MOSFETS R DS on 50V And 60V, Ultra Low Ros(on) Power MOSFETs In A TO-3 Package FEATURES • TO-3 Hermetic Package, .060 Dia. Leads • Ultra Low RDS(on) • Low Conductive Loss/Low Gate Charge


    OCR Scan     		OM55N1Ã OM75N05NK OM60N10NK OM75NQ6NK MIL-S-19500, OM55N10NK b7flTG73 55n10 75n05 OM75N06NK PDF

    Untitled

    Abstract: No abstract text available
    Text: OM55N1ÛNK OM75N05NK OM60N10NK OM75NQ6NK LOW VOLTAGE, LOW R DS on POWER MOSFETS IN A TO-3 PACKAGE 50V And 60V, Ultra Low RDS(on) Power MOSFETs In A TO-3 Package FEATURES • • • • TO-3 Hermetic Package, .060 Dia. Leads Ultra Low RDS(on) Low Conductive Loss/Low Gate Charge


    OCR Scan     		OM55N1Ã OM75N05NK OM60N10NK OM75NQ6NK MIL-S-19500, PDF