KM416V4104BS
Samsung Electronics
KM416V4104BS 4M x 16-Bit CMOS Dynamic RAM With Extended Data Out Organization = 4Mx16 Mode = Edo Voltage(V) = 3.3 Refresh = 4K/64ms Speed(ns) = 50,60 Package = 50TSOP2 Power = Normal,low Production Status = Eol Comments = -
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KM416V4104BS-45
Samsung Electronics
4M x 16-Bit CMOS Dynamic RAM with Extended Data Out
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KM416V4104BS-5
Samsung Electronics
4M x 16-Bit CMOS Dynamic RAM with Extended Data Out
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KM416V4104BS-6
Samsung Electronics
4M x 16-Bit CMOS Dynamic RAM with Extended Data Out
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KM416V4104BS-L-45
Samsung Electronics
4M x 16-Bit CMOS Dynamic RAM with Extended Data Out
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PDF
KM416V4104BSL-45
Samsung Electronics
4M x 16-Bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns, low power
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KM416V4104BS-L-5
Samsung Electronics
4M x 16-Bit CMOS Dynamic RAM with Extended Data Out
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KM416V4104BSL-5
Samsung Electronics
4M x 16-Bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power
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KM416V4104BS-L-6
Samsung Electronics
4M x 16-Bit CMOS Dynamic RAM with Extended Data Out
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PDF
KM416V4104BSL-6
Samsung Electronics
4M x 16-Bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power
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