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    0/K 2897 TRANSISTOR Search Results

    0/K 2897 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    0/K 2897 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: UCC2897 ą SLUS591G − NOVEMBER 2003 − REVISED DECEMBER 2008 ADVANCED CURRENTĆMODE ACTIVE CLAMP PWM CONTROLLER FEATURES D Ideal for Active Clamp/Reset Forward, D D D D D D D D D D DESCRIPTION The UCC2897 PWM controller simplifies implementation of the various active clamp/reset


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    PDF UCC2897 SLUS591G UCC2897

    Vishay quality iso certificate

    Abstract: opto d213 Vishay resistors quality iso certificate C22.2 NO.190 roederstein ESTA unbalance 3 phase load power factor correction 1000kVAr D-84030 estapact str 4512
    Text: VISHAY I N T E R T E C H N O L O G Y , I N C . INTERACTIVE data book ESTA High Voltage Power CAPAcitors vishay ESTA vsD-db0053-0210 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents


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    PDF vsD-db0053-0210 Vishay quality iso certificate opto d213 Vishay resistors quality iso certificate C22.2 NO.190 roederstein ESTA unbalance 3 phase load power factor correction 1000kVAr D-84030 estapact str 4512

    UCC2897PW

    Abstract: No abstract text available
    Text: UCC2897 ą SLUS591G − NOVEMBER 2003 − REVISED DECEMBER 2008 ADVANCED CURRENTĆMODE ACTIVE CLAMP PWM CONTROLLER FEATURES D Ideal for Active Clamp/Reset Forward, D D D D D D D D D D DESCRIPTION The UCC2897 PWM controller simplifies implementation of the various active clamp/reset


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    PDF UCC2897 SLUS591G UCC2897 UCC2897PW

    LNK406

    Abstract: LNK406EG snx-R1523 Philips CSV-RM8 bobbin RDR-194 XH004186 Lutron transformer rm8 Leviton dolph
    Text: Title Reference Design Report for a High Efficiency ≥85% , High Power Factor (>0.9) TRIAC Dimmable 14 WTYP LED Driver Using LinkSwitch -PH LNK406EG Specification 90 VAC – 265 VAC Input; 28 VTYP, 0.5 A Output Application LED Driver Author Applications Engineering Department


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    PDF LNK406EG LNK406 LNK406EG snx-R1523 Philips CSV-RM8 bobbin RDR-194 XH004186 Lutron transformer rm8 Leviton dolph

    RDR-194

    Abstract: Power Integrations LNK406EG snx-R1523 furukawa TEX-E 1350F-1 3M tape, 1350F-1 LNK406 FB 3211 RESISTOR UF54002
    Text: Title Reference Design Report for a High Efficiency ≥85% , High Power Factor (>0.9) TRIAC Dimmable 14 W LED Driver Using LinkSwitchTM-PH LNK406EG Specification 90 VAC – 265 VAC Input; 28 VTYP, 0.5 A Output Application LED Driver Author Applications Engineering Department


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    PDF LNK406EG RDR-194 RDR-194 Power Integrations LNK406EG snx-R1523 furukawa TEX-E 1350F-1 3M tape, 1350F-1 LNK406 FB 3211 RESISTOR UF54002

    EP2C8F256 package

    Abstract: S-2501-1 EP2C20F256 bga 896 TSMC 90nm sram
    Text: Section I. Cyclone II Device Family Data Sheet This section provides information for board layout designers to successfully layout their boards for Cyclone II devices. It contains the required PCB layout guidelines, device pin tables, and package specifications.


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    bga 896

    Abstract: TSMC 90nm sram EP2C50F484 APU 2471
    Text: Section I. Cyclone II Device Family Data Sheet This section provides information for board layout designers to successfully layout their boards for Cyclone II devices. It contains the required PCB layout guidelines, device pin tables, and package specifications.


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    EP2C5F256

    Abstract: CII51001-3 EP2C15A EP2C20 EP2C35 EP2C50 EP2C8F256 EP2C70F672 TSMC 90nm sram
    Text: Section I. Cyclone II Device Family Data Sheet This section provides information for board layout designers to successfully layout their boards for Cyclone II devices. It contains the required PCB layout guidelines, device pin tables, and package specifications.


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    Untitled

    Abstract: No abstract text available
    Text: Section I. Cyclone II Device Family Data Sheet This section provides information for board layout designers to successfully layout their boards for Cyclone II devices. It contains the required PCB layout guidelines, device pin tables, and package specifications.


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    tfk u 208 u

    Abstract: TFK U 111 B tfk bav 21 TFK U 111 B 45A BU208 tfk 138 TFK BU209 BU209 BU 208 tfk u 111
    Text: 'W BU 207 •BU 208 •BU 209 Sifizium-NPN-Leistungstransistoren Silicon NPN Power Transistors Anwendung : Application: Horizontal-Ablenk-Endstufen in Farbfernsehempfängern Horizontal deflection circuits in colour TV-receivers Besondere Merkmale: • Hohe Sperrspannung


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    PDF

    TRANSISTOR CD 2897

    Abstract: GFH601 k 2897 transistor 340 opto isolator 100J1
    Text: HARRIS SEMICOND MÊimmmmtiÈÊmâiiim SECTOR 37E D B 430SS71 DG2732b S E l HAS Optoelectronic Speciticatio n s. Photon Coupled Isolator GFH601 Ga As Solid State Lamp & NPN Silicon Photo-Transistor The G E Solid State GFH601 consists of a gallium arsenide infrared


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    PDF 430SS71 DG2732b GFH601 GFH601 92cs-42862 92cs-428m TRANSISTOR CD 2897 k 2897 transistor 340 opto isolator 100J1

    SAS660

    Abstract: MRF892
    Text: MOTOROLA SEM IC O N D U C T O R TECHNICAL DATA MRF892 The RF Line 14 W 900 MHz RF POWER TR A N SISTO R NPN SILICON RF POWER TRANSISTOR N P N S IL IC O N . . d e s ig n e d for 2 4 volt U H F la r g e -sig n a l, c o m m o n - b a s e a m p lifie r a p p lic a t io n s in in d u stria l a n d c o m m e rc ia l F M e q u ip m e n t o p e ra tin g


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    PDF MRF892 SAS660 MRF892

    H1163

    Abstract: C1709 C1706 MCA11G3 C2083 C2090 H11G1 H11G2 H11G3 MCA11G1
    Text: GENL I N S T R t OPTOELEK 88D aa GENERAL INSTRUMENT 0 2897 DE Ê BôTDlHû 00020^7 D HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPLERS MCA11G1 H11G1 MCA11G2 (H11G2) MCA11G3 (H11G3) PACKAGE DIMENSIONS Æ . hB l iS l r" I 6.86 (.270) 6.35 (.250) 0.36 (.014) I f ¥


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    PDF T012a MCA11G1 MCA11G2 H11G2) MCA11G3 H11G3) C2090 C2083 MCA11G1 MCA11G2 H1163 C1709 C1706 MCA11G3 C2083 C2090 H11G1 H11G2 H11G3

    A12540

    Abstract: a1-2540
    Text: A R R H A -2 5 4 0 I S W ideband, Fast Settling Operational Amplifier August 1991 Features Description • V e ry H ig h S le w R a t e . 4 0 0 V / jjs The Harris H A -2 5 4 0 Is a wideband, very high slew rate,


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    PDF 1910pm 1550pm 483pm) A12540 a1-2540

    1N5411

    Abstract: npn transistor RCA 467 CD4004T CA3051 CD4001D 40468A RCA 40822 40664 SCR rca 40583 2N5756
    Text: for HF-VHF-UHF-Microwave Applications RF Power Transistors R C A R F Power Transistors for 12.5 Volt Operation Hermetic Ceramic-Metal Stripline Package Flange TYPICAL OUTPUT POWER — WATTS 'j Hermetic Ceramic-Metal Coaxial Package (Large) Hermetic Ceramic-Metal


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    PDF CON-46 O-104 14-Lead 16-Lead 12-Lead 16-Lead O-220AB 1N5411 npn transistor RCA 467 CD4004T CA3051 CD4001D 40468A RCA 40822 40664 SCR rca 40583 2N5756

    2sd 5023

    Abstract: transistor BC 945 2SC 9012 bc 9013 transistor bc 855 9416A Transistor BC345 BFY41 bcx 388 BC 945
    Text: SEMICONDUCTORS INC OTE D | fil3t.t,5Q □D0Q2C12 7 | T TYPE NO. POLARITY Medium Power Transistors MAXIMUM RATINGS CASE Pd mW HFE •c (A) VCEO IV) min 40 35 40 40 40 VCE(SAT) max ■c (A) (VÏ COMPLE­ MENTARY TYPE *T min (MHz) Cob max (pF) 0.15 1 0.3 1


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    PDF -26UNF-2A O-48D 2sd 5023 transistor BC 945 2SC 9012 bc 9013 transistor bc 855 9416A Transistor BC345 BFY41 bcx 388 BC 945

    2sd 5023

    Abstract: bc 9013 bc 9013 g 2SC 9012 2218A cs9012 BC526 transistor BC 945 BC287 Transistor BC345
    Text: SEMICONDUCTORS INC OTE D | fil3t.t,5Q □D0Q2C12 7 | T TYPE NO. POLARITY Medium Power Transistors MAXIMUM RATINGS CASE Pd mW HFE ic (A) VCEO IV) min max 40 35 40 40 40 120 VCE(SAT) max (A) (Vï COMPLE­ MENTARY TYPE *T min (MHz) Cob max (pF) 0.15 1 0.3 1


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    PDF 13LLSD to-39 2sd 5023 bc 9013 bc 9013 g 2SC 9012 2218A cs9012 BC526 transistor BC 945 BC287 Transistor BC345

    Halbleiterbauelemente DDR

    Abstract: GAZ17 diode sy-250 "halbleiterwerk frankfurt" sal41 diode sy-170 SF 127 diode say17 Halbleiter-Bauelemente DDR SY 170
    Text: eiecrronic Halbleiter-Bauelemente Die vorliegende Übersicht enthält in gedrängter Form die wichtigsten Grenz- und Kenndaten der in der DD R gefertigten H albleiterbauelem ente. Die Kennwerte werden im allgem einen für eine Um gebungs­ temperatur von 25 °C angegeben.


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    PDF DOR102 Halbleiterbauelemente DDR GAZ17 diode sy-250 "halbleiterwerk frankfurt" sal41 diode sy-170 SF 127 diode say17 Halbleiter-Bauelemente DDR SY 170

    Untitled

    Abstract: No abstract text available
    Text: FINAL A M D tl Am28F256 256 Kilobit 32 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High performance ■ Latch-up protected to 100 mA from -1 V to V c c +1 V ■ Flasherase Electrical Bulk Chip-Erase — 70 ns maximum access time


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    PDF Am28F256 32-Pin

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


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    PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


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    2n3054

    Abstract: RCA transistor 40410 RCA 40310 2n2870 RCA 40636 transistor transistor 40410 ta7719 2n2338 2N2405 2N2147
    Text: jo is is u e jj. J 9 M O d .1 1 - <r*#► • 1 - t * « 1 I -tr 14 p i-er 2 1 his edition of the P o w e r T r a n s is to r D ir e c ­ to r y has been completely revised to reflect new An important change in this Directory is in the Index of Types which has been expanded to include


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    PDF edi358 TA7557 TA7611 TA7612 TA7639 TA7640 TA7719 TA7739 TA7740 TA7741 2n3054 RCA transistor 40410 RCA 40310 2n2870 RCA 40636 transistor transistor 40410 ta7719 2n2338 2N2405 2N2147

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


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    Motorola transistors MRF 947

    Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
    Text: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that


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    PDF 2PHX11136Q-17 Motorola transistors MRF 947 trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp