0/TRANSISTORS 132 GD Search Results

0/TRANSISTORS 132 GD Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

0/TRANSISTORS 132 GD Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
transistor marking code 12W SOT-23 Abstract: MGB20N40CL laptop charging crb kp series stepper motor japan servo co 2n3773 power Amplifier circuit diagrams MJ2955 TRANSISTOR pwm brush dc motor controller sg3526 SG3526 boost controller for PWM fan tl494 tip122 tip127 mosfet audio amp Text: SG388/D Rev. 1, Aug-1999 ON Semiconductor PUBLICATION ORDERING INFORMATION USA/EUROPE Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5193, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada	Original	SG388/D Aug-1999 r14153 transistor marking code 12W SOT-23 MGB20N40CL laptop charging crb kp series stepper motor japan servo co 2n3773 power Amplifier circuit diagrams MJ2955 TRANSISTOR pwm brush dc motor controller sg3526 SG3526 boost controller for PWM fan tl494 tip122 tip127 mosfet audio amp	PDF
FDPF 33N25T Abstract: 33N25T 33n25 diode marking 33a on semiconductor FDPF33N25T marking 33a on semiconductor Text: UniFET TM FDP33N25 / FDPF33N25 250V N-Channel MOSFET Features Description • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. 33A, 250V, RDS on = 0.094Ω @VGS = 10 V	Original	FDP33N25 FDPF33N25 FDPF33N25 FDPF33N25T FDPF 33N25T 33N25T 33n25 diode marking 33a on semiconductor marking 33a on semiconductor	PDF
600V igbt dc to dc buck converter Abstract: TRANSISTOR SMD CODE PACKAGE SOT89 bts 2140 1b data sheet TRANSISTOR SMD CODE PACKAGE SOT23 PSB 6970 HL V1.3 PEF 24628 E V1.2-G infineon psb 6970 PEF 4265 T V2.1 HT 1200-4 SLB 9635 Text: Infineon Product Catalog for Distribution 2008 Infineon Product Catalog for Distribution 2008 Product Catalog for Distribution Ordering No. B192-H6780-G11-X-7600 Published by Infineon Technologies AG [ www.infineon.com ] [ www.infineon.com/distribution ]	Original	B192-H6780-G11-X-7600 SP000008186 VDSL6100i-E 600V igbt dc to dc buck converter TRANSISTOR SMD CODE PACKAGE SOT89 bts 2140 1b data sheet TRANSISTOR SMD CODE PACKAGE SOT23 PSB 6970 HL V1.3 PEF 24628 E V1.2-G infineon psb 6970 PEF 4265 T V2.1 HT 1200-4 SLB 9635	PDF
2x062h Abstract: gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062 Text: Leshan Radio Company, Ltd. 2008 PRODUCTS CATALOGUE 目录 CONTENT 开关二极管 SWITCHING DIODES. 1 1. SOD–923 Surface Mount Switching Diodes. 1	Original	ZMM22 ZMM24 ZMM27 ZMM43 ZMM47 2x062h gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062	PDF
mosfet triggering circuit USING TL494 Abstract: controller for PWM fan tl494 TIP35C TIP36C sub amplifier circuit diagram 74ls TTL family UC3842 variable voltage smps design with TL431 Buck converter with sg3526 UC3842 smps design with TL431 MC44608P40 equivalent TRANSISTOR MPS2112 MC3364D Text: SG388/D Rev. 3, May-2001 Master Components Selector Guide PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada	Original	SG388/D May-2001 The422-3781 r14525 SG388/D mosfet triggering circuit USING TL494 controller for PWM fan tl494 TIP35C TIP36C sub amplifier circuit diagram 74ls TTL family UC3842 variable voltage smps design with TL431 Buck converter with sg3526 UC3842 smps design with TL431 MC44608P40 equivalent TRANSISTOR MPS2112 MC3364D	PDF
Mitsubishi transistor rf final Abstract: M57729 Text: MITSUBISHI RF POWER MODULE M57729 430-450MHZ, 12.5V, 30W, FM MOBILE RADIO Dimensions in mm OUTLINE DRAWING 66+ 1 60 ± 1 2 -R 2 ±0 .3 V / w GD 0 0.8 ± 0.2 12±1 16.5±1 PIN : 33 ±1 © P in : RF INPUT ©VCC1 ; 1st. DC SUPPLY © V C C2 : 2nd. DC SUPPLY	OCR Scan	M57729 430-450MHZ, Mitsubishi transistor rf final M57729	PDF
2SC3219 Abstract: x3165 2SC321 TP8V45FX T10M20F3 T10W20F3 T10W40F3 T20M20F3 T3M40F3 T3V40F3 Text: POWER TRANSISTORS SHINDENGEN ELECTRIC HF G 3SE J> m 023.^307 GDGOaifl G ISHE J age * Ultra High Speed Switching Transisto F3 series 0 1 pel EIAJ No. » tt Ä * S fc Absolute Maximum Ratings £ Type No. Vcbo VCEO VEBO 3220 • lo IB PT Tstg IJ [•c ] DcJ V oeo	OCR Scan	2SC3219 T6V20F3 T10W20F3 T6M20F3 T10M20F3 TP3V45FX y4053 T5V45FX TP5V45FX T8V45FX x3165 2SC321 TP8V45FX T10M20F3 T10W20F3 T10W40F3 T20M20F3 T3M40F3 T3V40F3	PDF
IRF150 Abstract: R01E MOSFET IRF150 7S001 IRF151 IRF152 IRF153 IRF162 IRF160 Text: OÏ 3875081 D Ë J 3075001 UG1Û27M 5 \| “~ G E SOLID ST A TE _ 01E - — -File Number 18274 . , D Standard Power MOSFETs IRF150, IRF151, \|RF152, IRF153	OCR Scan	7S001 IRF150, IRF151, RF152, IRF153 IRF152 IRF153 IRF150 R01E MOSFET IRF150 IRF151 IRF162 IRF160	PDF
kvp smd Abstract: kvp 42 DIODE kvp 26A M kvp diode 2005C 1.5 khp SMD kvp XMR5 0709a PKF SMD Text: AXIAL LEAD DIODES CURRENT P R V VO LTS R E C O V E R Y (nS) SU R G E (A) S E R IE S PAGE 50-1000 50-1000 50-1000 50-1000 2000 to 3000 1000 to 4000 9000 4500 to 6000 7000 to 8000 9000 to 10000 11000 to 12000 1000 to 5000 10000 to 15000 STANDARD STANDARD STANDARD	OCR Scan	600mA 220mA 200mA 175mA 150mA 100mA 500mA kvp smd kvp 42 DIODE kvp 26A M kvp diode 2005C 1.5 khp SMD kvp XMR5 0709a PKF SMD	PDF
Untitled Abstract: No abstract text available Text: Transistors Selection Guide by Applications and Functions • FET 5 Pin Mini Type (D12) n n n . .n U U Li u u u Neh 2 elements Nch 2 elements Hrrmr1 Application Low noise amp. switching Main Characteristics Vds * Vdsx (V) XN1872 n (V) 0.1 1.5 —3.5 Id	OCR Scan	XN1872 XN1D874/XP1D874 2SK198 2SK621 XN1D873/XP1D873 NPNf2SD132R^ SO-10C SO-14CD79) SO-14	PDF
Untitled Abstract: No abstract text available Text: 0 7 7 3 2 ^ GDD3322 443 blE D SUPERTEX INC ISTX 0 Supertex inc. High-Voltage Integrated Circuit Custom Design and Process Capabilities HVIC Custom Capabilities By design, our logic circuitry is particularly latch-up resistant for increased reliability in noisy environments. This is especially	OCR Scan	GDD3322	PDF
SC1741 Abstract: 2SD2172 gy-80 DTA144EF DTC123JF DTA143ZF 2sc2062c DTD143EF DTD114EF DTC144EL Text: S -y y y X £ /Transistors h ^ > y ^ ^ S f nnp l C O i'T i975^Â> e h ^ v ^ r o n u g i i a f é L S : u f c ^ , SiÎD0n ^ iC Î, / : - a r ii? ÎÇ l; ÎD ^ \| lr o c r ^ ig Î5 f e lÂ U L , Ä S l í J f A í í ' r y O W r t ik • SPT 4 ± 0 .2 2 .0 ± 0 .2	OCR Scan	SIP10) 801BX100) Nd022-01 dd022-01 dd92l-01 SC1741 2SD2172 gy-80 DTA144EF DTC123JF DTA143ZF 2sc2062c DTD143EF DTD114EF DTC144EL	PDF
TRANSISTORS 132 GD Abstract: IRF150 kiv-8 IRF151 circuits of IRF150 Text: IRF150, IRF151, IRF152, IRF153 Semiconductor 33A and 40A, 60V and 100V, 0.055 and 0.08 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 33A and 40A, 60V and 100V • High Input Impedance These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power	OCR Scan	IRF150, IRF151, IRF152, IRF153 TA17421. RF152, RF153 TRANSISTORS 132 GD IRF150 kiv-8 IRF151 circuits of IRF150	PDF
Untitled Abstract: No abstract text available Text: FSJ260D, FSJ260R S e m iconductor 44A, 200V, 0.050 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 44A, 200V, rQs^oN = 0.050£2 The D iscrete Products Operation of Harris Sem iconductor has developed a series of R adiation Hardened M O SFETs	OCR Scan	FSJ260D, FSJ260R MIL-S-19500	PDF

p6020 Abstract: TIP664 TIP-663 TIP663 TIP-665 Text: TEXAS IN STR ~b2 -COPTO 8 9 6 1 7 2 6 TEXAS INS TR D l F \| fl'iblTHL: □ □ 3 b cl ci0 1 <OPTO 62C 3 6 9 9 0 TIP663, TIP664, TIP665 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS REVISED OCTOBER 198 4 • 150 W at 100 ° C C ase Temperature T-33-29	OCR Scan	TIP663, TIP664, TIP665 hFE---250 T-33-29 p6020 TIP664 TIP-663 TIP663 TIP-665	PDF
2SC2407 Abstract: nec 2561 equivalent 2SC1255 NE41607 2sc1949 NE41632B NC921 NE41635 2SC2407 equivalent 2SC1592 Text: N E C/ 1SE CALIFORNIA L4H7414 D 0001310 NPN MEDIUM POWER UHF-VHF TRANSISTOR FEATURES NE416 SERIES DESCRIPTION AND APPLICATIONS The NE416 series of NPN silicon transistors is one of the most versatile and widely used of NEC’s microwave transistors. The series provides economical solutions to a wide range of ampli	OCR Scan	L4H7414 NE416 T-33-Ã 2SC2407 nec 2561 equivalent 2SC1255 NE41607 2sc1949 NE41632B NC921 NE41635 2SC2407 equivalent 2SC1592	PDF
32khz crystal oscillator Abstract: No abstract text available Text: Section 13 H8/3814 Series Electrical Characteristics 13.1 H8/3814 Series Absolute Maximum Ratings Table 13-1 lists the absolute maximum ratings. Table 13-1 Absolute Maximum Ratings Item Symbol Value Unit Power supply voltage Vcc -0 .3 to +7.0 V Analog power supply voltage	OCR Scan	H8/3814 00bl7GS 00bl707 00bl70Ã 44Tb2G4 32khz crystal oscillator	PDF
transistor A431 Abstract: MA3232 UD1001 A431 transistor FT4017 MT42a 20C26 DM01B SAC42 L29a Text: SYMBOLS & CODES EXPLAINED S YMBOL S & CODES C O M M O N TO MO RE T H A N ONE T E C H N I C A L SECTI ON LIN E No. ▼ — New Type + — Revised Specifications # - Non-JEDEC type manufactured outside u :s .a . TYPE No. t Switching type, also listed in Section 12	OCR Scan	BVCB0-80V BVCE0-60V BVEBO-15V BVCBO-100V BVCEO-80V BVEB0-15V BVCB0-60V BVCE0-40V MHM2101 transistor A431 MA3232 UD1001 A431 transistor FT4017 MT42a 20C26 DM01B SAC42 L29a	PDF
y112 Abstract: BGY112A BGY112B BGY112C DD302 Text: N AMER PHILIPS/DISCRETE bTE D • bbSa^l GQ3QSÖD T4M M A P X Philips Components Data sheet status Preliminary specification date of issue May 1991 B G Y 1 1 2 A/1 1 2 B/1 1 2 C VHF amplifier modules PINNING - SOT288C DESCRIPTION A range of RF power amplifier	OCR Scan	/112B/112C BGY112A BGY112B BGY112C bbS3R31 DD302Ã BGY112A/112B/112C OT288C. y112 BGY112C DD302	PDF
TRANSISTORS 132 GD Abstract: No abstract text available Text: J308 thru J310* CASE 29-04, STYLE 5 TO-92 TO-226AA MAXIMUM RATINGS Symbol Value Unit D rain-S ource V o ltag e V DS 25 Vdc G ate-Source V o ltage V GS 25 Vdc Forw ard Gate C u rrent >GF 10 m A dc Total Device D issipation Cw T a = 25°C Derate above 25°C	OCR Scan	O-226AA) TRANSISTORS 132 GD	PDF
IC BL 176A Abstract: No abstract text available Text: LBE/LCE2003S LBE/LCE2009S LBE/LCE2009SA P H I L I P S I N T E R N A T I O N A L S b J> m E 7 1 1 f l 2 b Q D M b i a MICROWAVE LINEAR POWER TRANSISTORS S < 1 8 2 • P H I ^3 NPN transistors for use in a common-emitter class-A linear power amplifier up to 4 GHz.	OCR Scan	LBE/LCE2003S LBE/LCE2009S LBE/LCE2009SA LBE2003S LBE2009S LCE2003S LCE2009S LBE2009SA LCE2009SA IC BL 176A	PDF
Untitled Abstract: No abstract text available Text: CF003 Series GaAs Pseudomorphic HEMT and MESFET Chips □ Low Noise Figure: 1.0 dB at 12 GHz □ High Gain: 10 dB at 12 GHz □ Pj{jg Power: +22 dBm at 12 GHz □ Wide Dynamic Range □ Active Layers Include: Pseudomorphic HEMT, Epitaxial and Ion Implanted	OCR Scan	CF003 CF003-03 CF003 CF003-01 n745D3	PDF
7 amps pnp transistor Abstract: 7S1 zener diode transistor C 4231 EM-83 ic for hearing aid operational amplifier discrete schematic pnp darlington array EM-21 DARLINGTON ARRAYS Darlington Independent Power Module Text: E C I SEMICONDUCTOR MAE D • 305fl7b7 0 0 0 0 D7 4 Oôb « E C I S -jy DESCRIPTION The ECI Semiconductor EM series has been generated to provide cost and space effective high performance analog system solutions in silicon for your specific application. The EM family of low-cost 30v Bipolar Gridded Semicustom Arrays is	OCR Scan	302A7L7 0D00074 302fl7b7 7 amps pnp transistor 7S1 zener diode transistor C 4231 EM-83 ic for hearing aid operational amplifier discrete schematic pnp darlington array EM-21 DARLINGTON ARRAYS Darlington Independent Power Module	PDF
dilmon 28 Abstract: OA34 Text: bBE J> m 3 7 bflSEE 0 0 x 7 7 3 b 'lO'i GEC PLESSEY Si PLSB GEC PLESSEY SEMICONDS S E M I C O N D U C T O R S DS2322-2.1 ULA DS SERIES HIGH PERFORMANCE ARRAYS FOR 100MHz DIGITAL ASIC SYSTEMS Supersedes June 1990 edition GEC Plessey Semiconductors DS Series of ULAs has been	OCR Scan	DS2322-2 100MHz dilmon 28 OA34	PDF

0/TRANSISTORS 132 GD Search Results

0/TRANSISTORS 132 GD Result Highlights (5)

0/TRANSISTORS 132 GD Datasheets Context Search

transistor marking code 12W SOT-23

FDPF 33N25T

600V igbt dc to dc buck converter

2x062h

mosfet triggering circuit USING TL494

Mitsubishi transistor rf final

2SC3219

IRF150

kvp smd

Untitled

Untitled

SC1741

TRANSISTORS 132 GD

Untitled

p6020

2SC2407

32khz crystal oscillator

transistor A431

y112

TRANSISTORS 132 GD

IC BL 176A

Untitled

7 amps pnp transistor

dilmon 28