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    0.65MM Search Results

    0.65MM Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    10118309-015LF Amphenol Communications Solutions Assembly, Top Mount, Short Body 65mm, S/D(68Pins), R/A, 3.3V, 1.5mm s/o, non-Eject, Low Cost Version, HF version Visit Amphenol Communications Solutions
    LM4865MMX/NOPB Texas Instruments 750mW Audio Power Amplifier with DC Volume Control and Headphone Switch 8-VSSOP -40 to 85 Visit Texas Instruments Buy
    LM4865MM/NOPB Texas Instruments 750mW Audio Power Amplifier with DC Volume Control and Headphone Switch 8-VSSOP -40 to 85 Visit Texas Instruments Buy
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    0.65MM Price and Stock

    Bivar Inc 906-5MM

    ROUND SPACER NYLON 5MM
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    DigiKey 906-5MM Bag 774 1
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    Newark 906-5MM Bulk 1,000
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    RS 906-5MM Bulk 1,000
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    Blue Robotics WLP-M10-6.5MM-LC

    CABLE GLAND 6.2-6.8MM M10
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    DigiKey WLP-M10-6.5MM-LC 1
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    TE Connectivity SCT-NO.2-E5-0-65MM

    HEATSHRINK TUBING .355" 4:1 BLK
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    Interstate Connecting Components SCT-NO.2-E5-0-65MM
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    Sager SCT-NO.2-E5-0-65MM 4,000
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    TE Connectivity SCT-NO.4-E2-0-65MM

    HEATSHRINK TUBING .700" 4:1 BLK
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    DigiKey SCT-NO.4-E2-0-65MM Bulk 5,000
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    Interstate Connecting Components SCT-NO.4-E2-0-65MM
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    TE Connectivity SCT-NO.3-E3-0-65MM

    HEATSHRINK TUBING .455" 4:1 BLK
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    DigiKey SCT-NO.3-E3-0-65MM Bulk 2,500
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    Sager SCT-NO.3-E3-0-65MM 2,500
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    0.65MM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    EXC14CE900U

    Abstract: EXC14CE900 EXC14CG EXC14 EXC-14C
    Text: Common mode Noise Filters Common mode Noise Filters Type: EXC14CG EXC14CE • Features ■ Recommended Applications ● Small size and low-profile (L 0.85mm҂W 0.65mm҂H 0.45mm) ● Filtering the noise of high-speed differential signaling lines and minimizing deformations of transmitted signal


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    PDF EXC14CG EXC14CE 85mmW 65mmH EXC14CE900U 667-EXC-14CE900U EXC-14CE900U EXC14CE900U EXC14CE900 EXC14 EXC-14C

    Untitled

    Abstract: No abstract text available
    Text: 1.6X1.25mm BI-COLOR SMD CHIP LED LAMP Part Number: APTB1612SYKQWDF ATTENTION Super Bright Yellow White OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Features Description z 1.6mmx1.25mm SMT LED, 0.65mm thickness. The Super Bright Yellow device is made with AlGaInP on


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    PDF APTB1612SYKQWDF 2000pcs DSAL1007 AUG/19/2010 604-APTB1612SYKQWDF

    APH1608YC

    Abstract: No abstract text available
    Text: 1.6X0.8mm SMD CHIP LED LAMP Part Number: APH1608YC Description Features z1.6mmX0.8mm SMT LED, 0.65mm THICKNESS. zLOW POWER CONSUMPTION. zWIDE VIEWING ANGLE. zIDEAL The Yellow source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Yellow Light


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    PDF APH1608YC 2000PCS APR/30/2007 DSAA9887 APH1608YC

    APTB1612SURKQBDC-F01

    Abstract: No abstract text available
    Text: 1.6X1.25mm BI-COLOR SMD CHIP LED LAMP Part Number: APTB1612SURKQBDC-F01 Hyper Red Blue ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Features Description z1.6mmx1.25mm SMT LED, 0.65mm thickness. The Hyper Red source color devices are made with AlGaInP


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    PDF APTB1612SURKQBDC-F01 2000pcs MAR/24/2009 DSAH3787 APTB1612SURKQBDC-F01

    CL21B333KBANNNC

    Abstract: No abstract text available
    Text: Multi Layer Ceramic Capacitor MLCC 1. Model : CL21B333KBANNNC 2. Description Part no. Size (inch(mm) Thickness (mm) Temperature charateristics Capacitance value(uF) Capacitance tolerance(%) Voltage (V) CL21B333KBANNNC 0805/2012 0.65mm X7R 33nF ± 10 % 50


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    PDF CL21B333KBANNNC E4294A, 100MHz 25Vdc)

    jedec package MO-220 vggc

    Abstract: MO-220
    Text: Package Outline 16-Lead QFN Package Outline K6 4.00x4.00mm body, 1.00mm height (max), 0.65mm pitch D2 D 16 Note 1 (Index Area D/2 x E/2) 16 1 1 e Note 1 (Index Area D/2 x E/2) E E2 b View B Top View Bottom View Note 3 θ L A A3 Seating Plane A1 L1 Note 2


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    PDF 16-Lead DSPD-16QFNK64X4P065 B101008 jedec package MO-220 vggc MO-220

    ultra low igss pA

    Abstract: CSD23201W10
    Text: P-Channel CICLON NexFET Power MOSFETs CSD23201W10 Product Summary Features • Ultra Low Qg & Qgd D  Small Footprint D VDS -12 V Qg 1.8 nC Qgd  Low Profile 0.65mm height G  Pb Free S RDS on  Gate ESD Protection – 3kV nC 110 m VGS=-2.5V


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    PDF CSD23201W10 ultra low igss pA CSD23201W10

    red green bi-color LED super bright

    Abstract: APTB1612ESGC-F01
    Text: 1.6X1.25mm BI-COLOR SMD CHIP LED LAMP Part Number: APTB1612ESGC-F01 High Efficiency Red Super Bright Green Features Description z 1.6mmx1.25mm SMT LED, 0.65mm thickness. The High Efficiency Red source color devices are made with z Bi-color,low power consumption.


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    PDF APTB1612ESGC-F01 2000pcs Tolera011 DSAF1097 APR/19/2011 red green bi-color LED super bright APTB1612ESGC-F01

    APTB1612

    Abstract: APTB1612SURKCGKC-F01
    Text: 1.6X1.25mm BI-COLOR SMD CHIP LED LAMP Part Number: APTB1612SURKCGKC-F01 Hyper Red Green Description Features z 1.6mmx1.25mm SMT LED, 0.65mm THICKNESS. z BI-COLOR,LOW POWER CONSUMPTION. z WIDE VIEWING ANGLE. The Hyper Red source color devices are made with DH


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    PDF APTB1612SURKCGKC-F01 2000PCS APR/29/2007 DSAH3786 APTB1612 APTB1612SURKCGKC-F01

    Untitled

    Abstract: No abstract text available
    Text: CERAMIC SMD ULTRA MINIATURE CONTOUR MODE QUARTZ CRYSTAL ABM8L Pb RoHS Compliant 3.2 x 2.5 x 0.65mm | | | | | | | | | | | | | | | FEATURES: APPLICATIONS: • Low frequencies in a Low height and Ultra Miniature Package • Ceramic package and metal lid assures high reliability


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    PDF

    APTB1612SURKSGC-F01

    Abstract: No abstract text available
    Text: 1.6x1.25mm BI-COLOR SMD CHIP LED LAMP APTB1612SURKSGC-F01 HYPER RED SUPER BRIGHT GREEN Description Features 1.6mmx1.25mm SMT LED, 0.65mm THICKNESS. The Hyper Red source color devices are made with DH BI-COLOR,LOW POWER CONSUMPTION. InGaAlP on GaAs substrate Light Emitting Diode.


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    PDF APTB1612SURKSGC-F01 2000PCS DSAF1099 MAR/19/2005 APTB1612SURKSGC-F01

    Untitled

    Abstract: No abstract text available
    Text: 3.3V CMOS SINGLE INVERTER GATE DESCRIPTION: FEATURES: - 0.5 MICRON CMOS Technology ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model C = 200pF, R = 0 0.65mm pitch PSOP package Extended commercial range o f - 4 0 ° C to + 8 5 °C Vcc = 3.3V ± 0.3V, Normal Range


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    PDF MIL-STD-883, 200pF, ALVC1GU04

    Untitled

    Abstract: No abstract text available
    Text: 3.3V CMOS SINGLE INVERTER GATE WITH 5 VOLT TOLERANT I/O J m ï ï ., D E S C R IP TIO N : FEATURES: - 0.5 MICRON CMOS Technology ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model C = 200pF, R = 0 0.65mm pitch PSOP package Extended commercial range of - 40°C to +85°C


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    PDF MIL-STD-883, 200pF, LVC1GU04A: LVC1GU04A IDT74ALVC1G04. 2975StenderWay

    Untitled

    Abstract: No abstract text available
    Text: 3.3V CMOS HEX INVERTER WITH OPEN-DRAIN OUT­ PUTS, 5 VOLT TOLERANT I/O DESCRIPTION: FEATURES: - IDT74LVC05A ADVANCE INFORMATION 0.5 MICRON CMOS Technology ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model C = 200pF, R = 0 1,27mm pitch SOIC, 0.65mm pitch SSOP and


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    PDF IDT74LVC05A MIL-STD-883, 200pF, LVC05A

    Untitled

    Abstract: No abstract text available
    Text: 3.3V CMOS HEX INVERTER WITH 5 VOLTTOLERANT I/O FEATURES: - DESCRIPTION: 0.5 MICRON CMOS Technology ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model C = 200pF, R = 0 1,27mm pitch SOIC, 0.65mm pitch SSOP and 0.65mm pitch TSSOP packages


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    PDF MIL-STD-883, 200pF, LVC04A IDT74LVC04A

    Untitled

    Abstract: No abstract text available
    Text: 3.3V CMOS QUADRUPLE 2-INPUT POSITIVE-NAND GATE, 5 VOLT TOLERANT I/O DESCRIPTION: FEATURES: - 0.5 MICRON CMOS Technology ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model C = 200pF, R = 0 1,27mm pitch SOIC, 0.65mm pitch SSOP and 0.65mm pitch TSSOP packages


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    PDF MIL-STD-883, 200pF, LVC00A IDT74LVC00A S014-2) S014-3)

    Untitled

    Abstract: No abstract text available
    Text: IDT74LVCU04A ADVANCE INFORMATION 3.3V CMOS HEX INVERTER WITH 5 VOLT TOLERANT I/O FE A T U R E S : - 0.5 MICRON CMOS Technology - ESD > 2000V per MlL-STD-883, Method 3015; > 200V using machine model C = 200pF, R = 0 - 1,27mm pitch SOIC, 0.65mm pitch SSOP and


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    PDF IDT74LVCU04A MlL-STD-883, 200pF, LVCU04A: LVCU04A

    Untitled

    Abstract: No abstract text available
    Text: _ irr R i D E S C R IP T IO N : FEATURES: This quadruple 2-input positive-AND gate is built using advanced - 0.5 MICRON CMOS Technology - ESD > 2000V per MIL-STD-883, Method 3015; - > 200V using machine model C = 200pF, R = 0 1,27mm pitch SOIC, 0.65mm pitch S S O P and


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    PDF MIL-STD-883, 200pF, ALVC08 IDT74ALVC08

    Untitled

    Abstract: No abstract text available
    Text: 3.3V CMOS 3-LINE TO 8-LINE DECODER/DEMULTIPLEXER, WITH ADDRESS LATCHES FEATURES: - 0.5 MICRON CMOS Technology - ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model C = 200pF, R = 0 - 1,27mm pitch SOIC, 0.635mm pitch QSOP, 0.65mm pitch SSOP, 0.65mm pitch TSSOP packages


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    PDF MIL-STD-883, 200pF, 635mm LVC137A:

    Untitled

    Abstract: No abstract text available
    Text: 3.3V CMOS OCTAL TRANSPARENT D-TYPE LATCH WITH 3-STATE OUTPUTS, 5 VOLT TOLERANT I/O, BUS-HOLD DESCRIPTION: FEATURES: - 0.5 MICRON CMOS Technology ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model C = 200pF, R = 0 1,27mm pitch SOIC, 0.65mm pitch SSOP,


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    PDF MIL-STD-883, 200pF, 635mm LVCH373A IDT74LVCH373A

    Untitled

    Abstract: No abstract text available
    Text: 3.3V CMOS SINGLE 2-INPUT POSITIVE-AND GATE WITH 5 VOLT TOLERANT I/O DESCRIPTION: FEATURES: - 0.5 MICRON CMOS Technology ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model C = 200pF, R = 0 0.65mm pitch PSOP package Extended commercial range of - 4 0 ° C to +85°C


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    PDF MIL-STD-883, 200pF, LVC1G08A IDT74LVC1G79A. IDT74ALVC1G04.

    Untitled

    Abstract: No abstract text available
    Text: 3.3V CMOS OCTAL BUFFER/DRIVER WITH 3-STATE OUTPUTS AND BUS-HOLD FEATURES: - 0.5 MICRON CMOS Technology ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model C = 200pF, R = 0 1,27mm pitch SOIC, 0.65mm pitch SSOP, 0.635mm pitch QSOP, 0.65mm pitch TSSOP packages


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    PDF MIL-STD-883, 200pF, 635mm LVCH244A: 2975StenderW

    Untitled

    Abstract: No abstract text available
    Text: 3.3V CMOS SINGLE POSITIVE-EDGETRIGGERED D-TYPE FLIP-FLOP FE A T U R E S : - D E S C R IP T IO N : 0.5 MICRON CMOS Technology ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model C = 200pF, R = 0 0.65mm pitch P SO P package Extended commercial range of - 40° C to + 85° C


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    PDF MIL-STD-883, 200pF, ALVC1G79: IDT74ALVC1G79 ALVC1G79 IDT74ALVC1G04.

    Untitled

    Abstract: No abstract text available
    Text: 3.3V CMOS QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS IDT74ALVC126 ADVANCE INFORMATION DESCRIPTION: FEATURES: - 0.5 MICRON CMOS Technology ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model C = 200pF, R = 0 - 1,27mm pitch SOIC, 0.65mm pitch SSOP and


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    PDF IDT74ALVC126 MIL-STD-883, 200pF, ALVC126: