1S697
Abstract: BP107 FT2500CL FT2500CL-12 T-25
Text: POüJEREX m INC W 05 De | T S T M b S l 000315b E R E X 3 J~~~ *T"— ^ ï T - a i FT2500CL Powerex, Inc. Hlllls Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Ave. G. Durand, BP107, 72003 LeMana, France (43) 72.75.15 Phase Control SCR
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000315b
FT2500CL
BP107,
FT2500CL
Amperes/200-1200
ail71
Avg/200-1200
1S697
BP107
FT2500CL-12
T-25
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thyristors 5000 volt 3000 amperes
Abstract: thyristors 5000 volt 2000 amperes
Text: POüJEREX INC m W 05 De | TSTMbSl 000315b 3 J~~~ *T"—^ ï T - a i E R E X FT2500CL Powerex, Inc. Hlllls Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Ave. G. Durand, BP107, 72003 LeMana, France (43) 72.75.15 Phase Control SCR
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000315b
FT2500CL
BP107,
Amperes/200-1200
MAX/10
thyristors 5000 volt 3000 amperes
thyristors 5000 volt 2000 amperes
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BP107
Abstract: FT2500CL FT2500CL-12 T-25
Text: POüJEREX INC m W 05 De | TSTMbSl 000315b 3 J~~~ *T"—^ ï T - a i E R E X FT2500CL Powerex, Inc. Hlllls Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Ave. G. Durand, BP107, 72003 LeMana, France (43) 72.75.15 Phase Control SCR
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000315b
FT2500CL
BP107,
FT2500CL
Amperes/200-1200
Avg/200-1200
BP107
FT2500CL-12
T-25
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Magnetoresistance and sensor
Abstract: DM-230
Text: SONY CORP/COMPONENT PRODS 4RE Ö3ÖE303 D 000315b 5 DM-230 S O N Y . Magnetoresistance Element Description Package Outline Unit: mm DM-230 a magnetic sensor using magnetoresistance effect is composed of ferromagnetic material deposited by evaporation on a silicon substrate.lt is
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000315b
DM-230
DM-230
150mVp-p
Magnetoresistance and sensor
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As15u
Abstract: AS15-U 15A10 las15u
Text: SEMTECH CORP SñE D IH ñlB'ilB11! 0 0 0 3 1 5 3 1.5 AMP POSITIVE VOLTAGE REGULATORS Rfi? SET L A S 1500 ABSOLUTE MAXIMUM RATINGS PARAMETER FEATURES • Guaranteed Power Dissipation 15 Watts @ 87.5° Case • Guaranteed input-output differential: + 2.4 Volts
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2SK2098-01M
Abstract: 2sk2098
Text: 2SK2098-01M S IP M O S F U J I P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET _ _ _ - FAP-III SERIES • Features • • • • • • Outline Drawings High current Low on-resistance No secondary breakdown
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2SK2098-01M
SC-67
20Ki2)
0GD3157
2sk2098
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68230
Abstract: parallel/transistor 68230 TS68230MC 68230 A 2a23j 68000 thomson
Text: O THOMSON COMPOSANTS MILITAIRES ET SPATIAUX TS 68230 HMOS HIGH DENSITY N-CHANNEL SILICON-GATE PARALLEL INTERFACE / TIMER DESCRIPTION The TS 68230 parallel interface/timer Pl/T provides versati le double buffered parallel interfaces and a system oriented
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GQ031SS
MIL-STD-883
TS68230
MIL-STD-883
000315b
68230
parallel/transistor 68230
TS68230MC
68230 A
2a23j
68000 thomson
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2SK2098-01M
Abstract: 2sk2098
Text: 2SK2098-01M S IP M O S F U J I P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET _ _ _ - F A P - I I I • Features S E R I E S Outline Drawings • High current • Low on-resistance
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2SK2098-01M
SC-67
Q003157
2sk2098
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Untitled
Abstract: No abstract text available
Text: F U J I T S U M I C R O E L E C T R O N I C S 7fl D E | 3 7 ^ 7 k . a 000314ft ft | j - t f C '7 .3 ‘ 1 * Prelim inary FU JITSU M OS M em o ries M B85214-12, M B85214-15 MOS 262,144 X 8-Bit Dynamic Random Access Memory Module Description The Fujitsu MB85214 is a fully decoded, 262,144 word x 8-bit
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000314ft
B85214-12,
B85214-15
MB85214
MB81256
18-pad
24-pin
MB852I4-12
MB8S214-15
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Las series current regulators
Abstract: 5 Amp Positive Adjustable Regulators 15A20 LAS15A05 LAS1515 las1505 LAS1512 LAS1524 las15u
Text: S E M T E C H CORP SñE D IH ñlB'ilB11! 00 03 15 3 1.5 AMP POSITIVE VOLTAGE REGULATORS Rfi? SET L A S 1500 ABSOLUTE MAXIMUM RATINGS PARAMETER FEATURES • Guaranteed Power Dissipation 15 Watts @ 87.5° Case • Guaranteed input-output differential: + 2.4 Volts
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OQ031S3
Las series current regulators
5 Amp Positive Adjustable Regulators
15A20
LAS15A05
LAS1515
las1505
LAS1512
LAS1524
las15u
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V25P
Abstract: V10P V59N V25N v24n 00D05 v29n v63n v59p
Text: S-MOS S Y S T E M S A Seiko Epson Affiliate October 1996 240-OUTPUT TFT SOURCE DRIVER DESCRIPTION The SED1902 is a source driver IC for 64-level 256 color display TFT-LCDs. The digital data input is 6 bits by 2 pixels (where a pixel is defined as 3 dots: R, G, B). Using its 6-bit D/A converter and
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240-OUTPUT
SED1902
64-level
DDD3171
V25P
V10P
V59N
V25N
v24n
00D05
v29n
v63n
v59p
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019S
Abstract: HDAC10180 RS-343-A SPT1018 SPT1018B TDC1018
Text: @ SPT S P T 1 1 8 8-BIT, HIGH SPEED D/A CONVERTER SIGNAL PROCESSINO TECHNOLOGIES FEATURES APPLICATIONS • 275 MWPS Conversion Rate - Version A • 165 MWPS Conversion Rate - Version B • Compatible with TDC1018 and HDAC10180 with Improved Performance • RS-343-A Compatible
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SPT1018
TDC1018
HDAC10180
RS-343-A
SPT1018BIN
00031b4
019S
SPT1018
SPT1018B
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Untitled
Abstract: No abstract text available
Text: 2SK2098-01M SIPMOS FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET _ _ _ - FAP-III SERIES Outline Drawings • F e a tu re s • High current • Low on-resistance • No secondary breakdown • Low driving power
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2SK2098-01M
000315b
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52C8128
Abstract: V52C8128
Text: M O SEL V tT E U C V52C8128 MULTIPORT VIDEO RAM WITH 128K X 8 DRAM AND 256 X 8 SAM 70 80 10 Max. RAS Access Time, tRAC 70 ns 80 ns 100 ns Max. CAS Access Time, (tCAC) 20 ns 25 ns 25 ns Max. Column Address Access Time, ( t ^ ) 35 ns 40 ns 50 ns Min. Fast Page Mode Cycle Time, (tPC)
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V52C8128
52C8128
V52C8128
0D03E01
52C8128
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cs40
Abstract: JT23
Text: HY5117800 Series •HYUNDAI 2M x 8-bit CMOS DRAM DESCRIPTION The HY5117800 is the new generation and fast dynamic RAM organized 2,097,152 x 8-bit. The HY5117800 utilizes Hyundai’s CM OS silicon gate process technology as well as advanced circuit techniques to provide wide
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HY5117800
1ad08-10-m
4b75DÃ
D0031bÃ
HY5117800JC
HY5117800SLJC
cs40
JT23
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A63 A
Abstract: SCV64
Text: Openbus Interface Components - Universe User Manual 2 Functional Description 2.1 Architectural Overview This section introduces the general architecture of the Universe. This description makes frequent reference to the functional block diagram provided in Figure 2.1 on page 2-2. Notice
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313-Pin
DD03341
A63 A
SCV64
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