pmd20k200
Abstract: diode OA-70 20K150
Text: SEflTECH CORP 56E D • fiia H B I 000320b 204 150 WATT 14 AMP CONTINUOUS, 20 AMP PEAK ABSOLUTE MAXIMUM RATINGS PARAM ETER SYM BO L Collector Emitter Voltage PMD 20K120 PMD 20K150 PMD 20K200 Collector Base Voltage PMD 20K120 PMD 20K150 PMD 20K200 FEATURES
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000320b
20K120
20K150
20K200
pmd20k200
diode OA-70
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Til 322A
Abstract: FFD11 280/Til 322A
Text: S A R A Chipset Technical Manual Segmentation SARA Hardware Description Chapter 3. Hardware Description 3.1 Segmentation SARA Hardware Description 3.1.1 Segmentation SARA Internal Block Description Figure 3-1 shows a block diagram of the Segmentation S A R A chip.
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3-27B.
3-28B.
Til 322A
FFD11
280/Til 322A
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IL43 marking
Abstract: mb 3221 IL43 bit 3105 BTS 308 0314E irf 345h 2tu marking code BTS 716 G cj-cc
Text: P r e l im in a r y I n f o r m a t io n PMC PMC-Sierra, Inc. P M 63 44 EQUAD QUAD E1 FRAMER ISSUE 3 FEA TU RES • Integrates four full-featured E1 framers and transmitters in a single device for terminating duplex E1 signals. • Software and functionally compatible with the PM6341 E1XC Single E1
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PM6344
PM6341
PM4344
IL43 marking
mb 3221
IL43
bit 3105
BTS 308
0314E
irf 345h
2tu marking code
BTS 716 G
cj-cc
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D3254
Abstract: No abstract text available
Text: QS7024A PRELIMINARY High-Speed CMOS 4K x 16 Asynchronous Dual-Port RAM Q FEATURES QS7024A DESCRIPTION High-speed asynchronous dual-port architecture Access times from either port, 20/25/35/55 ns Industry standard pin-out Independent port access and control
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QS7024A
QS7024A
100-pin
84-pin
64Kbit
32-bit
MDSF-00024-00
D3254
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SO-8 LTLS e3
Abstract: ltls e3 IC LTLS E3
Text: M O S E L V TTE U C PRELIMINARY V52C8256 MULTIPORT VIDEO RAM WITH 256K X 8 DRAM AND 5 1 2 X 8 SAM HIGH PERFORMANCE V52C8256 Max. RAS Access Tim e, tRAC 60 70 80 60 ns 70 ns 80 ns Max. CA S Access Time, (tcAc) 15 ns 20 ns 25 ns Max. Column Address Access Tim e, ( t ^ )
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V52C8256
V52C8256
V52CB256
SO-8 LTLS e3
ltls e3
IC LTLS E3
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71c1000
Abstract: GA032 trw 1014 RAS 0510 GM71C1000 GM71C1000-80 GM71C1000-12
Text: GM71C1000 WORDS X 1 BIT CMOS DYNAMIC RAM Description Pin Configuration The G M 71C1000 is the new generation dynamic RAM QDD3202 1048576 1 M G ST PRELIMINARY SPECIFICATION REV. 0 ^ 18 PLASTIC DIP TOP VIEW organized 1048576 x 1 Bit, GM 71C1000 has realized
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GM71C1000
71C1000
402A7S7
GA032
trw 1014
RAS 0510
GM71C1000
GM71C1000-80
GM71C1000-12
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Untitled
Abstract: No abstract text available
Text: '> 3 7 v o w Schottky Barrier Diode Twin Diode OUTLINE DIMENSIONS D5SC4M Case : ITO-220 40V 5A • T j 15 0 t: • P rrsm •7 J L Æ -J b K •S R S S •D C /D C □ » { - ; ? •mm. y - A , oa«§§ •aa, m x-sjim s • ü Ê tè ü RATINGS • Îê fc fU ^ Æ fê
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ITO-220
000320b
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Untitled
Abstract: No abstract text available
Text: WS57C45 HIGH-SPEED 2K x 8 REGISTERED CMOS PROM/RPROM KEY FEATURES • Ultra-Fast Access Time • DESC SMD Nos. 5962-88735/5962-87529 — 25 ns Setup — 12 ns Clock to Output • Pin Compatible with AM27S45 and CY7C245 • Immune to Latch-Up • Low Power Consumption
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WS57C45
AM27S45
CY7C245
WS57C45
CY7C245.
S57C45-35T
S57C45-35TMB*
MIL-STD-883C
S57C45-45KMB*
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