Untitled
Abstract: No abstract text available
Text: ALL E GR O MICROSYSTEMS INC T3 D • 05D433Ô 00037SS PR O CESS NJ26 T ■ ALGR T -9 1 -0 1 Process NJ26 N-Channel Junction Field-Effect Transistor Process NJ26 is an N-channel junction field-effect transistor designed for general-purpose amplifier ap plications at frequencies of up to 450 MHz.
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05D433Ã
00037SS
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Untitled
Abstract: No abstract text available
Text: H Y 6 2 8 1 0 0 A -I •HYUNDAI S e r ie s 128KX 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY628100A-I is a high-speed, low power and 131,072 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit
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128KX
HY628100A-I
1DD03-11-MAY94
0Q037hD
HY628100ALP-I
HY628100ALLP-I
HY628100ALG-I
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QSFCT153T
Abstract: 74FCT153
Text: QSFCT153T, 253T, 2153T, 2253T QS54/74FCT153T QS54/74FCT253T High Speed CMOS Dual 4 Input Mulitplexers Q QS54/74FCT2153T QS54/74FCT2253T FEATURES/BENEFITS • Pin and function compatible to the 74F153/253 74FCT153/253 and 74FCT153T/253T • CMOS power levels: <7.5 mW static
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QSFCT153T,
2153T,
2253T
QS54/74FCT153T
QS54/74FCT253T
QS54/74FCT2153T
QS54/74FCT2253T
74F153/253
74FCT153/253
74FCT153T/253T
QSFCT153T
74FCT153
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QS3J309
Abstract: 0Q03
Text: m Q u a l it y Semiconductor , I nc . QuickSwitch Products QuickScan 9-Bit Universal JTAG Access Port With Output Enable QS3J309 FEATURES/BENEFITS DESCRIPTION • • • • • • • • • • • • • The QS3J309 JTAG QuickScan device is designed
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QS3J309
a-1993
28-pin
QS3J309
004in.
HSS-20A
HSS-24A
74bbfl03
0Q037SS
0Q03
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