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    5D diode

    Abstract: ZVN3310 00573E D7950 sw S O T-3 2 3
    Text: PLESSEY SEHICOND/DISCRETE TS 7 2 2 0 5 3 3 P L E S S E Y S E M I C O N D /DI S C R E T E DE 1 7 2 5 G 533 □□□S 7 3 S 3 | 9S D 0 5 7 3 5 T '3 S - i5 ZVN 3310 N-channel enhancement mode vertical D M O S FET FEATURES • Com pact geometry • Fast sw itching speeds


    OCR Scan     		PDF 752DS33 0DG573fl G-240 00573e G-241 ZVN3310 G-242 G-243 000574E 5D diode ZVN3310 00573E D7950 sw S O T-3 2 3

    I3160

    Abstract: No abstract text available
    Text: LattiCe ispLSI andpLSI 3160 11Ü\ Coiporatfon*01^ High Dens'ty Programmable Logic Features Functional Block Diagram • HIGH-DENSITY PROGRAMMABLE LOGIC — 160 I/O Pins — 7000 PLD Gates — 320 Registers — High Speed Global Interconnect — Wide Input Gating for Fast Counters, State


    OCR Scan     		PDF 3160-100LM 3160-70LM 3160-125LM 3160-70LM 208-Pin I3160