000MS3B Search Results

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Text: “H Y U H DAI HY5116400B Series 4M X 4-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY5116400B is the new generation and fast dynam ic RAM organized 4,194,304 x 4-bit. T he HY5116400B utilizes Hyundai’s CM OS silicon gate process technology as well as advanced circuit techniques to provide wide