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    Untitled

    Abstract: No abstract text available
    Text: SAM S UN G E L E C T R O N I C S INC b4E » • 7^4142 KMM581020AN GG14454 455 ■ SM6K DRAM MODULES 1 M x 8 DRAM SIMM Memory Module with Low Power GENERAL DESCRIPTION FEATURES • Performance range: KMM581020AN-7 • • • » • • • tiuc tcAc I rc


    OCR Scan     		PDF KMM581020AN GG14454 KMM581020AN-7 130ns KMM581020AN-8 150ns KMM581020AN-10 100ns 180ns cycles/128ms

    Untitled

    Abstract: No abstract text available
    Text: PowerMOS transistor_ BUZ72 N AMER PHILIPS/DISCRETE ObE D _ • bb53T31 0014430 7 ■ L r - 3 ^ - 1 1 May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		PDF BUZ72 bb53T31 O220AB; T-39-11 bbS3T31 0D14435 bt53T31

    BUZ72

    Abstract: V103 TRANSISTOR V103 F5101
    Text: PowerMOS transistor N AMER PHILIPS/DISCRETE BUZ72 ObE D • ^53^31 ~ 0014430 7 . T - 3*7-1 May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF BUZ72 bbS3T31 7zms71j bfci53cà 001443b T-39-11 BUZ72 V103 TRANSISTOR V103 F5101