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    SP121

    Abstract: aegb SGSP121
    Text: S G S-THOMSON 07E D g 7=12^3? I 7 3 C . 1 7 3 0 1 _ .p. SGSP121 SGSP122 à 1 N-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SWITCHIIN1G APPLICATIONS These products are diffused multi-cell silicon gate N-Cfiarmel enhancement mode Pow er-M os field effect transistors.


    OCR Scan     		PDF SGSP121 SGSP122 00170OM 0V/60V SP121 SP122 aegb