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    003S0 Search Results

    003S0 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    ADC1003S030-DB Renesas Electronics Corporation ADC1003S030 demo board Visit Renesas Electronics Corporation
    ADC1003S040TS-C18 Renesas Electronics Corporation Single 10 bits ADC up to 40 Msps, with voltage regulator Visit Renesas Electronics Corporation
    ADC1003S050TS-C18 Renesas Electronics Corporation Single 10 bits ADC up to 50 Msps, with voltage regulator Visit Renesas Electronics Corporation
    RTK0EH0003S02001BR Renesas Electronics Corporation Blood Pressure Monitoring Evaluation Kit for RL78/H1D Visit Renesas Electronics Corporation
    RTK0EG0003S02001BJ Renesas Electronics Corporation Capacitive Touch Evaluation System for RX130 Visit Renesas Electronics Corporation
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    003S0 Price and Stock

    Seoul Semiconductor S1W0-2835409003-0000003S-0P003

    LED 3528
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    DigiKey S1W0-2835409003-0000003S-0P003 Digi-Reel 96,588 1
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    S1W0-2835409003-0000003S-0P003 Cut Tape 96,588 1
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    S1W0-2835409003-0000003S-0P003 Reel 80,000 16,000
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    Avnet Americas S1W0-2835409003-0000003S-0P003 Reel 9 Weeks 128,000
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    Avnet Silica S1W0-2835409003-0000003S-0P003 11 Weeks 12,800
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    Seoul Semiconductor S1W0-2835359003-0000003S-0P003

    LED 3528
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    DigiKey S1W0-2835359003-0000003S-0P003 Cut Tape 63,000 1
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    S1W0-2835359003-0000003S-0P003 Digi-Reel 63,000 1
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    S1W0-2835359003-0000003S-0P003 Reel 48,000 16,000
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    Avnet Americas S1W0-2835359003-0000003S-0P003 Reel 9 Weeks 128,000
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    Seoul Semiconductor S1W0-2835308003-0000003S-0P003

    LED 3528 WARM WHT 3000K SMD
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    DigiKey S1W0-2835308003-0000003S-0P003 Cut Tape 22,880 1
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    S1W0-2835308003-0000003S-0P003 Digi-Reel 22,880 1
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    Avnet Americas S1W0-2835308003-0000003S-0P003 Reel 9 Weeks 144,000
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    New Advantage Corporation S1W0-2835308003-0000003S-0P003 256,000 1
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    Seoul Semiconductor S1S0-3030409506-0000003S-00001

    LED 3030 NEUTRAL WHT 4000K SMD
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    DigiKey S1S0-3030409506-0000003S-00001 Cut Tape 12,938 1
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    S1S0-3030409506-0000003S-00001 Digi-Reel 12,938 1
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    S1S0-3030409506-0000003S-00001 Reel 9,000 4,500
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    Avnet Americas S1S0-3030409506-0000003S-00001 Reel 9 Weeks 22,500
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    Avnet Silica S1S0-3030409506-0000003S-00001 11 Weeks 22,500
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    Seoul Semiconductor S1W0-3030508006-0000003S-0S003

    LED 3030 COOL WHITE 5000K SMD
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    DigiKey S1W0-3030508006-0000003S-0S003 Reel 9,000 4,500
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    003S0 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    qml38535

    Abstract: qml-38535
    Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPRO VED A_ Added changes in accordance with NOR 5962-R159-97_ 96-12-20_Raymond Monnin B Change to Table I; lC C Dp , device type column. ksr Updated boilerplate. 98-02-18 Raymond Monnin


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    5962-R159-97 APPROVED256LPA20F44B 5962-9679506MYA EDI816256LPA20N44B 003500b qml38535 qml-38535 PDF

    Untitled

    Abstract: No abstract text available
    Text: D E V E L O P M E N T DATA TIP3055T This data sheet contains advance information and specifications are subject to change without notice. SILICON EPITAXIAL-BASE POWER TRANSISTOR N-P-N transistor in a plastic envelope. With its p-n-p complement TIP295ST they are primarily intended


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    TIP3055T TIP295ST O-220 bbS3R31 0D3SQ31 003S032 PDF

    Untitled

    Abstract: No abstract text available
    Text: COM’L: IND: -15/25 a PALCE22V10Z Family Zero-Power 24-Pin EE CMOS Versatile PAL Device Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 10 macrocells programmable as registered or combinatorial, and active high or active low to match application needs


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    PALCE22V10Z 24-Pin QB5752b 003501b PALCE22V1OZ-25 PALCE22V1 OZ-15 PALCE22V10Z-25 PDF

    transistor TIP3055

    Abstract: power transistor tip3055 TIP3055 003S02 circuit use tip2955 transistor PNP TIP3055 TIP2955 transistor PNP TIP2955 tip3055 TRANSISTOR
    Text: TIP3055 _ SILICON POWER TRANSISTOR N-P-N epitaxial-base power transistor in a plastic SOT-93 envelope for use in audio output stages and general am plifier and switching applications. P-N-P complement is T IP 2 9 5 5 . Q U IC K R E F E R E N C E D A T A


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    TIP3055 OT-93 TIP2955. OT-93. 003S02Ã transistor TIP3055 power transistor tip3055 TIP3055 003S02 circuit use tip2955 transistor PNP TIP3055 TIP2955 transistor PNP TIP2955 tip3055 TRANSISTOR PDF

    pal22v10

    Abstract: AMPAL22V10APC
    Text: COM’L :-7/10/15 MIL: -12/20 a Advanced Micro Devices PAL22V10 Family, AmPAL22V10/A 24-Pin TTL Versatile PAL Device DISTINCTIVE CHARACTERISTICS • As fast as 7.5 ns propagation delay and 91 MHz fMAx external ■ 10 Macrocells programmable as registered or


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    PAL22V10 AmPAL22V10/A 24-Pin 28-pin 16559B-18 003S0MÖ AMPAL22V10APC PDF

    Untitled

    Abstract: No abstract text available
    Text: KM44V4000BS CMOS D R A M ELECTRONICS 4M x 4 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle


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    KM44V4000BS 16Mx4, 512Kx8) V4000B PDF

    diode IN4148

    Abstract: Transistor Equivalent list BDT85 IN4148 LXE18300X SC15 1250-003 BY239-800 Transistor AND DIODE Equivalent list
    Text: # I » IK DISCRETE SEMICONDUCTORS SG41EET L X E 1 83 00 X NPN silicon planar epitaxial microwave power transistor Preliminary specification File under Discrete Semiconductors, S C 1 5 January 1992 Philips Semiconductors PHILIPS • b b S B ^ l D03SÜ73 ‘•T‘1 ■


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    LXE18300X 00350fll diode IN4148 Transistor Equivalent list BDT85 IN4148 LXE18300X SC15 1250-003 BY239-800 Transistor AND DIODE Equivalent list PDF

    TIP3055T

    Abstract: USA060-1 transistor 8771 transistor 902
    Text: DEVELOPMENT DATA TIP3055T T h is data sheet contains advance inform ation and «peclfleationi are subject to change w ithout notice. SILICON EPITAXIAL-BASE POWER TRANSISTOR N-P-N transistor in a plastic envelope. W ith its p-n-p complement T IP 2 9 5 S T they are prim arily intended


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    TIP3055T TIP295ST T0-220. bb53T31 003S03E TIP3055T USA060-1 transistor 8771 transistor 902 PDF

    Untitled

    Abstract: No abstract text available
    Text: Us e r ’s M a n u al <£>2 iL 0 5 Ch apter 2 INTERFACING THE SCC/ESCC 2.1 INTRODUCTION This chapter covers the system interface requirements with the SCC Timing requirem ents for both devices are described in a general sense here, and the user should refer to the SCC Product Specification for detailed AC/DC


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    Z80230 Z85230 PDF

    siemens triac

    Abstract: No abstract text available
    Text: 47E D • 0E3SbOS 0035056 0 ■ SIEG SIEMENS AKTIENGESELLSCHAF Programmable Digital Timer SAB 0529 Features • • • • • • • • Bipolar 1C Direct operation from AC line or DC supply possible Time base is 50 Hz line frequency Triac triggering with voltage synchronization for


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    235b05 siemens triac PDF

    MIPS r2000

    Abstract: SRA32 R2000 mips uPD30400
    Text: E C ELECTRONICS INC b7E D • 1^1 1^1 I l L . bM27S2S QG3flT73 521 M N E C E VR4000PC pPD30400 64-Bit RISC Microprocessor: On-Chip Prim ary Cache Memory NEC Electronics Inc. Preliminary Information_ November Description


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    bM27S2S QG3flT73 VR4000PC uPD30400 64-Bit VR4000PCTM R4000 VR4000PC VR4000PC' MIPS r2000 SRA32 R2000 mips PDF

    Untitled

    Abstract: No abstract text available
    Text: Advanced Micro Devices Am27C4096 4 Megabit 262,144 X 16-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Single + 5 V power supply ■ Fast access time ■ ± 10% power supply tolerance standard on most speeds — 90 ns ■ Low power consumption ■ 100% Flashrite programming


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    Am27C4096 16-Bit) 40-pin 44-pin KS000010 11408E-9 Q25752Ã PDF

    AM33C93A

    Abstract: No abstract text available
    Text: Advanced Micro Devices Am27C040 4 Megabit 524,288 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time ■ ±10% power supply tolerance standard on most speeds — 90 ns ■ 100% Flashrite programming ■ Low power consumption — Typical programming time of 1 minute


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    Am27C040 28-pin 32-pin Am33C93A PDF

    Untitled

    Abstract: No abstract text available
    Text: J _ TIP140 TIP141 TIP142 V SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial-base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications. SOT-93 plastic envelope. P-N-P complements are TIP145, TIP146


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    TIP140 TIP141 TIP142 OT-93 TIP145, TIP146 TIP147. TIP140 PDF

    Audio Power Amplifiers

    Abstract: QM96 hybrid audio amplifier OM961 OM991 philips hybrid qm961 hi-fi hi-fi system g0350
    Text: Product specification P hilips Sem iconductors Hybrid integrated circuit hHI audio power amplifiers OM961/OM991 PIN CONFIGURATION DESCRIPTION PINNING The OM961 and OM991 are Ihin film hybrid integrated circuit hi-fi audio amplifiers for sinusoidal output power up to 60 W and 120 W


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    OM961/OM991 OM961 OM991 OM961/OM991 7Z75SO? 0G35GM0 G035041 Audio Power Amplifiers QM96 hybrid audio amplifier philips hybrid qm961 hi-fi hi-fi system g0350 PDF

    1M823-1

    Abstract: 1N827 DIODE 1N827 1N821-1 1N823 DIODE 1N825 1N829-1 1N825 1N827-1 1N821-1 JANTX
    Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 16 November 1994 MIL-S-19500/159H 16 Hav 1994 SUPERSEDING MIL-S-19500/159G 22 January 1993 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE,


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    MIL-S-19500/159H MIL-S-19500/159G 1N821, 1N823, 1N825, 1N827, 1N829, 1N821-1, 1N823-1, 1N825-1, 1M823-1 1N827 DIODE 1N827 1N821-1 1N823 DIODE 1N825 1N829-1 1N825 1N827-1 1N821-1 JANTX PDF

    TH6P04T6V5CL

    Abstract: TH6P04T25CL TH6P04 SGS-Thomson T-62-11 6P04T6V5CL
    Text: 3DE » •' 712^337 O D Sm b b 7 SGSTHOMSON S-THOMSON ''P i?2 *I 1 TH6P04T6V5CL TH6P04T25CL r «leiditgrasKS S 6 ■ : TRANSIL ARRAY FOR DATA LINE PROTECTION D ESC RIPTIO N Developed specially for data line protection at the PC Board Level, the component offers 8 protective


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    TH6P04T6V5CL TH6P04T25CL D89TH6P04T-2 003E000 6P04T6V5CL/TH6P04T25CL DIP-20 TH6P04T6V5CL TH6P04T25CL TH6P04 SGS-Thomson T-62-11 6P04T6V5CL PDF

    pal22v10

    Abstract: stag ppz
    Text: ADV MICRO PLA/PLE/ARRAYS 4ÔE J> COM’L 025752b DG3207Ö T -<3 P A L 2 2 V 1 0 -7 7.5 ns 24-Pin TTL Versatile PAL Device Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • ■ ■ ■ 7.5 ns propagation delay and 91 MHz fMAX 10 macrocells programmable as registered or


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    025752b DG3207Ö 24-Pin 28-pln 30A31 Zm2200 SGUP-85 PAL22V10-7 pal22v10 stag ppz PDF

    QML-38535

    Abstract: AG qd SMD CDFP3-F28 military marking symbols 1GD47D
    Text: REVISIONS LTR DESCRIPTION A Corrected waveform labeling error on sheet 13. Updated boilerplate. gig DATE YR-MO-DA APPROVED 97-09-18 Raymond Monnin REV SHEET REV A A A A A SHEET 15 16 17 18 19 REV STATUS OF SHEETS PMIC N/A STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS


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    -65647RH-8 5962F9582301VYC HS9-65647RH-Q 003202e! QML-38535 AG qd SMD CDFP3-F28 military marking symbols 1GD47D PDF

    s3331

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS LXEE18300X NPN silicon planar epitaxial microwave power transistor Preliminary specification File under Discrete Semiconductors, SC15 January 1992 Philips Semiconductors o PHILIPS bt,S3331 0035073 MTS Prelim inary specification PhiMps Semiconductors


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    LXEE18300X S3331 LXE18300X 350fll PDF

    44V4100

    Abstract: No abstract text available
    Text: KM44V4100BK CMOS DRAM ELECTRONICS 4M x 4 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a lamily ol 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle


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    KM44V4100BK 16Mx4, 512Kx8) 7TL414E 44V4100 PDF