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    Abstract: No abstract text available
    Text: N AUER PHI LIP S/DISCRETE 2SE D btaS3T31 00E05S0 3 BUK457-450B PowerMOS transistor G E N E R A L D E S C R IP T IO N Q U IC K R E F E R E N C E D A TA N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


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    btaS3T31 00E05S0 BUK457-450B bbS3T31 PDF

    BUK457-450B

    Abstract: T0220AB
    Text: N AMER P H I L I P S / D I S C R E T E S5E m D bia53T31 00E05S0 3 • PowerMOS transistor BUK457-450B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


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    biaS3T31 00205S0 BUK457-450B ID/100 T0220AB PDF