T1P110
Abstract: transistor tip 107 T1P111 T1P105 darlington npn tip 102 np112 VCS-60V T1P115 L08M darlington tip 102
Text: ¡ S A M S UN G S E M I C ON D U CT OR INC 14E D 1 7^1,4142 000772a fl PNP EPriAXIAT. SILICON DARLINGTON TRANSISTOR TIP105/106/107 r HIGH DC CURRENT GAIN ‘ MIN hFE=1000 @ V c e = —4 V, lc = -3 A COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER
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TIP105/106/107
000772a
TIP100/101/102
TIP105
TIP106
TIP107
T1P105
TIP115:
T1P110
transistor tip 107
T1P111
T1P105
darlington npn tip 102
np112
VCS-60V
T1P115
L08M
darlington tip 102
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HP5082-2835
Abstract: MP8776 MP8785 MP8786 MP8786AN MP8786AQ MP8786AR MP8786AS MP87L86
Text: MP8786 JTE X A R CMOS 30 MSPS, 8-Bit High-Speed, Low Power Analog-to-Digital Converter with Power Down FEATURES • • • • • • • • • • • • • • • • 8-Bit Resolution Sampling Rate to 30 MHz Low Power: 110 mW typ. excluding reference
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MP8786
100uA
MP8776
MP87L86
MP8785
34EEblfl
000777b
HP5082-2835
MP8776
MP8785
MP8786
MP8786AN
MP8786AQ
MP8786AR
MP8786AS
MP87L86
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Untitled
Abstract: No abstract text available
Text: £ XC5200 Field Programmable Gate Arrays x ilin x August 6,1996 Version 4.01 Preliminary Product Specification Features • Fully supported by XACTsfep Development System - Includes complete support for XACT-Performance™, X-BLOX™, Unified Libraries, Relationally Placed
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XC5200
PQ100
VQ100
TQ144
PG156
XC5202
XC5204
XC5210
XC5215
PQ160
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80C31 instruction set
Abstract: EXIF-91h
Text: DS80C320 DALLAS SEMICONDUCTOR FEA TU R ES • 80C32-Compatible - Pin-compatible Standard 8051 instruction set - F our8-bit I/O ports Three 16-bit timer/counters 256 bytes scratchpad RAM Multiplexed address/data bus Addresses 64K bytes ROM and 64K bytes RAM
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DS80C320
80C32-Compatible
10X10X2
abl4130
44-PIN
2bl413G
80C31 instruction set
EXIF-91h
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Untitled
Abstract: No abstract text available
Text: September 1997 PRELIM INARY MÉLMicro Linear ML6516244 16-Bit Buffer/Line Driver with 3-State Outputs GENERAL DESCRIPTION FEATURES The M L6516244 is a BiCM OS, 16-bit buffer/line driver with 3-state outputs. This device was specifically designed for high speed bus applications. Its 16 channels support
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ML6516244
16-Bit
L6516244
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Untitled
Abstract: No abstract text available
Text: GM71V64403A GM71VS64403AL 16,777,216 w o r d s x 4 b i t I G «ternir a n P n ! fri L u o e m ic o n u o .,L t a . CMOS DYNAMIC RAM Description Pin Configuration 32 S O J /T S O P n The GM71V S 64403A/AL is the new generation dynamic RAM organized 16,777,216 words by 4bits.
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GM71V64403A
GM71VS64403AL
GM71V
4403A/AL
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Untitled
Abstract: No abstract text available
Text: GM71V17803C GM71VS17803CL LG Semicon Co.,Ltd. 2,097,152 WORDS x 8RAM BIT CMOS DYNAMIC Description Features The GM71V S 17803C/CL is the new generation dynamic RAM organized 2,097,152 x 8 bit. GM71V(S)17803C/CL has realized higher density, higher performance and various
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GM71V17803C
GM71VS17803CL
GM71V
17803C/CL
28pin
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AN7270
Abstract: D00771M AN72-7
Text: ~~ PANASONIC 6932852. INDL/ELEK PANASONIC -CIO 7S INDL*ELECTRONIC » F | tjTBEÖSE 72C Q00771M 0771^ D D T '7 ? - C f'0 7 T T - y - f TTffl I C AN7270 AN7270 FM 4 , Fb1 Í 1 Í É í Í i11ÍÍ1 1 £ & // F M IF A m p lifie r C ir c u it Unit it s ti tz ? -1 .
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D00771M
AN7270
18-Lead
fi-10
75kHz
h13aflS2
AN727O
AN7270
AN72-7
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RBS 2000
Abstract: No abstract text available
Text: MP87L84 Low Voltage CMOS 10-Bit 2 MHz Analog-to-Digital Converter JTE X A R APPLICATIONS FEATURES 3.3 V Operation 10-Bit Resolution 2 MHz Sampling Rate DNL = ±1 LSB, INL = +2 LSB Internal S/H Function V im DC Range: 0 V to V dd V ref DC Range! 1 V to V dd
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MP87L84
10-Bit
10-bit,
3422bl8
00G7772
RBS 2000
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T2D 44 diode
Abstract: T2D DIODE 44 T2D DIODE 42 T2d 03 diode T2D 37 DIODE T2D DIODE 43 T2D 24 DIODE T2D DIODE 32 T2D diode t2d 17 diode
Text: MP7680 5 V CMOS 12-Bit Quad Double-Buffered Multiplying Digital-to-Analog Converter JE’ E X q R March 1998-3 FEATURES • • • • • • • • • Exar Pioneered Segmented DAC Approach Four Double-Buffered 12-bit DACs on a Single Chip Independent Reference Inputs
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MP7680
12-Bit
TTL75
22blA
00Q77
00G77
T2D 44 diode
T2D DIODE 44
T2D DIODE 42
T2d 03 diode
T2D 37 DIODE
T2D DIODE 43
T2D 24 DIODE
T2D DIODE 32
T2D diode
t2d 17 diode
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DIN 50014 STANDARD
Abstract: K102P3 K1793 F119 K102 K102P2
Text: TELEFUNKEN ELECTRONIC w t> m IALGG a'jeoo'ìb o o o 7 ?si b K 102 P TTdtLIKFyMKiKI electronic Creative Technologies - - T ~ ÿ / - * 3 Optically Coupled Isolator C onstruction: Emitter: Detector: G aA s IR Emitting Diode Silicon N PN Epitaxial Planar Phototransistor
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D0077S1
flL-1000
DIN 50014 STANDARD
K102P3
K1793
F119
K102
K102P2
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Untitled
Abstract: No abstract text available
Text: MP8832 Triple 8-Bit High Speed ADC with Gamma Compensated References JTE X A R March 1998-3 FEATURES BENEFITS • 3 Independent 8-bit ADCs • Simultaneous Sampling @ 4 MSPS • Independent Digitally Controlled References with Proprietary Gamma Compensation
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MP8832
10MHz
300mW
3422blfl
00G77Ã
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Untitled
Abstract: No abstract text available
Text: XRD4417 Linear CCD Signal Processor with 10-Bit ADC and Serial Interface JE’ E X q R FEATURES APPLICATIONS • 1.54 MSPS Pixel-to-Pixel Sample Rate • Color and Gray Scale Flat Bed Scanners • Serial Output 10-Bit ADC • Color and Gray Scale Sheet Fed Scanners
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XRD4417
10-Bit
150mW
XRD4417
200mA
34E2blfl
00G7772
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Untitled
Abstract: No abstract text available
Text: t 64K 32K 16K X 25643/45 X 25323/25 X 25163/65 t t 8K x 8 Bit 4K x 8 Bit 2K x 8 Bit Programmable Watchdog Timer & Vcc Supervisory Circuit w/Serial E2PROM FEATURES DESCRIPTION • Programmable Watchdog Timer » Low Vcc Detection and Reset Assertion — Reset Signal Valid to Vcc=1V
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0G077S3
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HP5082-2835
Abstract: MP87L85 MP87L85AN MP87L85AR MP87L85AS DB2 DB3 DC power hdb5e t 944
Text: MP87L85 Low Voltage CMOS 8-Bit High Speed Analog-to-Digital Converter JTE X A R FEATURES • • • • • • • • APPLICATIONS 3.3 Volt Operation 8-Bit Resolution DNL = +1/2 LSB, INL = +1 LSB typ Internal S/H Function V im DC Range: 0 V to V dd V ref DC Range: 1 V to V dd
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MP87L85
MP87L85
34E2blA
0DG7772
34EEblfl
000777b
HP5082-2835
MP87L85AN
MP87L85AR
MP87L85AS
DB2 DB3 DC power
hdb5e
t 944
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Untitled
Abstract: No abstract text available
Text: "Sb TOSHIBA O I S C R E T E / O P T O 9097250 TOSHIBA dF | T D ^ E S O 0007711 '56C '07 719 DISCRETE/OPTO o' T-33-29 S IL IC O N NPN T R IP L E D IF F U SE D M E S A TYPE _ (D A R L IN G T O N POWER)_ INDUSTRIAL APPLICATIONS HIGH POWER SWITCHING APPLICATIONS.
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T-33-29
00G77E1
2SD548
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TIP1477
Abstract: TLP147 k 3531 transistor TIP145F TIP146F TIP147F transistor K 3531 TIP147T pnp darlington to-220 10a
Text: SAMSU NG SEM ICONDUCTOR INC 14E D B.Tab'llME GG077SG 1 I PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP145F/146F/147F HIGH DC CURRENT GAltf' MIN hFE=1000 @ V c e = — 4 V , lc = -5 A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE
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7UH112
aG077SG
TIP145F/146F/147F
TIP140F/141F/142F
TIP145F
TIP146F
TIP147F
TIP1477
TLP147
k 3531 transistor
TIP145F
TIP146F
TIP147F
transistor K 3531
TIP147T
pnp darlington to-220 10a
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Untitled
Abstract: No abstract text available
Text: September 1997 PRELIMINARY MÉLMicro Linear ML6516241 16-Bit Buffer/Line Driver with 3-State Outputs GENERAL DESCRIPTION FEATURES The ML6516241 is a BiCM OS, 16-bit buffer/line driver with 3-state outputs. This device was specifically designed for high speed bus applications. Its 16 channels support
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ML6516241
16-Bit
ML6516241
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Untitled
Abstract: No abstract text available
Text: ¡SAMSUNG SEM IC ON DU CTOR MJE200 INC IME 0 | 7^4142 □ 0 Q 7 b tit NPN EPITAXIAL SILICON TRANSISTOR CÒ LLECTOR-EM ITTER SU STAINING VOLTAGE LOW CO LLECTOR-EM ITTER SATURATION VOLTAGE HIGH CU RREN T GAIN-BANDW IDTH PRODUCT-MIN fT=65MHz @ lc=100m A Complementary to MJE210
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MJE200
65MHz
MJE210
GQG77fe
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MJE350 equivalent
Abstract: No abstract text available
Text: SAMSUNG S E M IC O N D U C T O R MJE350 INC IM E D J 7 ^ 4 :1 ,4 2 00077Q5 1 PNP EPITAXIAL SILICON TRANSISTOR T HIGH COLLECTOR-EMITtER SUSTAINING VOLTAGE HIGH VOLTAGE GENERAL PURPOSE APPLICATIONS SUITABLE FOR TRANSFORMER " 1 3 ~ i< f TO-128 Complementary to MJE340
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MJE350
00077Q5
O-128
MJE340
GQG77fe
MJE350 equivalent
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Untitled
Abstract: No abstract text available
Text: MICRON SEMICONDUCTOR INC b3E D • blllSM'î D D 0 7 7 H C1 lûl ■ MRN ADVANCE M IC R O N I MT4 L C2 M8 B112 2 MEG X 8 WIDE DRAM SEMICONDUCTOR INC WIDE DRAM 2 MEG x 8 DRAM 5.0V FAST-PAGE-MODE (MT4C2M8B1/2) 3.0/3.3V, FAST-PAGE-MODE (MT4LC2M8B1/2) FEATURES
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048-cycle
096-cycle
400mW
A0-A10;
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DALLAS DS80C320
Abstract: DS80C320-QCG T movx 80C32 DS80 DS80C320 DS80C320-FCG DS80C320-FNG DS80C320-QCG QDG775S
Text: DS80C320 DALLAS SEMICONDUCTOR FEA TU R ES • 80C32-Compatible - Pin-compatible Standard 8051 instruction set - F our8-bit I/O ports Three 16-bit timer/counters 256 bytes scratchpad RAM Multiplexed address/data bus Addresses 64K bytes ROM and 64K bytes RAM
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DS80C320
80C32-Compatible
16-bit
abl4130
000777a
44-PIN
2bl413Q
DALLAS DS80C320
DS80C320-QCG T
movx
80C32
DS80
DS80C320
DS80C320-FCG
DS80C320-FNG
DS80C320-QCG
QDG775S
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HP5082-2835
Abstract: MP7680 MP7680JE MP7680JN MP7680KE MP7680KN
Text: MP7680 5 V CMOS 12-Bit Quad Double-Buffered Multiplying Digital-to-Analog Converter JE’ E X q R March 1998-3 FEATURES • • • • • • • • • Exar Pioneered Segmented DAC Approach Four Double-Buffered 12-bit DACs on a Single Chip Independent Reference Inputs
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12-bit
TTL75
MP7680
34B2bia
3425fcilfl
00G77Ã
HP5082-2835
MP7680
MP7680JE
MP7680JN
MP7680KE
MP7680KN
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transistor 711
Abstract: DO 127 samsung tv
Text: IME D I 7 ^ 4 1 4 2 Q007b?7 b | NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSD5016 SAM SUN G SEM ICOND UC TO R INC T-33-11 V COLOR TV HORIZONTAL OUTPUT APPLICATIONS TO-3P F High Collector-Bass Vottags Vcso=1500V ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Characteristic
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Q007b
KSD5016
T-33-11
GQG77fe
transistor 711
DO 127
samsung tv
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