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    TXC Corporation 7M-50.000MAYC-T

    3.2X2.5 SEAM SEAL MHZ QUARTZ XTA
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    DigiKey 7M-50.000MAYC-T Reel
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    Mouser Electronics 7M-50.000MAYC-T
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    PanJit Semiconductor PG600M_AY_10001

    Rectifiers 1000V General Purpose Rectifiers 6A
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    Mouser Electronics PG600M_AY_10001
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    NAC PG600M_AY_10001 400
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    PanJit Semiconductor PG600M_AY_00001

    Rectifiers 1000V General Purpose Rectifiers 6A
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    Mouser Electronics PG600M_AY_00001
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    NAC PG600M_AY_00001 400
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    TXC Corporation QT49-5.000MAYS-B

    Crystals HC49 Through Hole MHz Quartz Xtal / Metal, +/-30ppm @25C, +/-30ppm (-10 to 60C), 30pF
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    Mouser Electronics QT49-5.000MAYS-B
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    ROHM Semiconductor KTR03EZPF1004

    Thick Film Resistors - SMD 0603 1Mohm 1% High VoltageAEC-Q200
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    TTI KTR03EZPF1004 Reel 10,000 5,000
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    00MAY Datasheets Context Search

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    pal 007B

    Abstract: PAL 007C MOSFET hyperterminal apc CI 7410 mosfet pal 007c APC hyperterminal commands apc back-ups 500 rs diagram micrel TX 433 MHz layout 00bf mosfet national semiconductor superIO
    Text: Sandpoint III Sandpoint System Documentation Covering Sandpoint and Associated MPPMC Processor Mezzanine Cards Rev 1 2001 Feb 16 Contents User’s Manual Schematics Errata List SP3 Talos 603/740/745 Configuration Guide Schematics Errata List TALOS Unity (8240/8245)


    Original
    75x/7400/7410) MPC8240 MPC107 64-bit pal 007B PAL 007C MOSFET hyperterminal apc CI 7410 mosfet pal 007c APC hyperterminal commands apc back-ups 500 rs diagram micrel TX 433 MHz layout 00bf mosfet national semiconductor superIO PDF

    PAL 007C MOSFET

    Abstract: pal 007B mosfet pal 007c pal 007c computer motherboard circuit diagram P4 ibm 2001 hyperterminal apc APC hyperterminal commands Mictor 38 connecter PC MOTHERBOARD ibm rev 1.5 SERVICE MANUAL free vhdl code for lift controller
    Text: Sandpoint System Documentation Covering Sandpoint and Associated MPPMC Processor Mezzanine Cards Rev 3 2002 Jan 24 Contents Sandpoint III User’s Manual Schematics Errata List SP3 Talos MPC745/MPC740/ MPC603 Configuration Guide Schematics Errata List TALOS


    Original
    MPC745/MPC740/ MPC603 MPC8245/MPC8240) MPC7410/ MPC7400/ MPC755/MPC750) MPC7455/MPC7451) MPC7445/MPC7441) PAL 007C MOSFET pal 007B mosfet pal 007c pal 007c computer motherboard circuit diagram P4 ibm 2001 hyperterminal apc APC hyperterminal commands Mictor 38 connecter PC MOTHERBOARD ibm rev 1.5 SERVICE MANUAL free vhdl code for lift controller PDF

    Untitled

    Abstract: No abstract text available
    Text: -HYUND AI HY588321 Series 256K X 32-bit Syncronous Graphic RAM PRELIMINARY SPEC Introduction Overview The eight megabit Synchronous Graphics RAM SGRAM is a single port, application specific memory device designed for graphics applications, it is organized as 128K words per bank x 32 bits per word x 2 banks. Internally,


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    HY588321 32-bit 1SC01-00-MAY95 HY588321QF HY588321TC 14mm2 100oin PDF

    DML D01

    Abstract: No abstract text available
    Text: HYUNDAI HY514810B Series 5 1 2 K x 8 - b it C M O S DRAM w ith W r ite -P e r - B II PRELIMINARY DESCRIPTION The HY51481 OB is the new generation and fast dynamic RAM organized 524,288 x 8-bits. The HY51481 OB utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating


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    HY514810B HY51481 1AC19-00-MAY94 HY514810BJC HY514810BUC HY514810BSUC HY514810BTC DML D01 PDF

    OQ0005

    Abstract: No abstract text available
    Text: •HYUNDAI H Y 5 1 V 4 8 0 0 B S e r ie s 512Kx8-blt C M O S DRAM PRELIMINARY DESCRIPTION The HY51V4800B is the new generation and fast dynamic RAM organized 524,288 x 8-bits. The HY51V4800B utilizes Hyundai's C M O S silicon gate process technology as well as advanced circuit techniques to provide wide


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    512Kx8-blt HY51V4800B 400mil 28pin 1AC18-00-MAY94 OQ0005 PDF

    8500K25

    Abstract: No abstract text available
    Text: • H Y U N D A I HY51V16400A Series 4M X 4-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V16400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY51V16400A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


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    HY51V16400A HY51V16400Ato such300 1AD31-00-MAY94 HY51V16400AJ HY51V16400ASLJ HY51V16400AT 8500K25 PDF

    Untitled

    Abstract: No abstract text available
    Text: HY51V16100A Series •HYUNDAI 16Mx 1-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V16100A is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The HY51V16100A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques


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    HY51V16100A 1AD21-00-MAY9S HY51V161OOA HY51V16100AJ HY51V16100ASU HY51V16100AT HY51V16100ASLT PDF

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI SEMICONDUCTOR HYM540410 Series 4M X 40-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM540410 is a 4M x 40-bit Fast page mode CMOS DRAM module consisting often HY5117400 in 24/28 pin SOJ orTSOP-ll on a 72 pin glass-epoxy printed circuit board. O.Zty? decoupling capacitor is mounted for each


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    HYM540410 40-bit HY5117400 HYM54041OM/LM/TM/LTM HYM54041OMG/LMG/TMG/LTMG HYM540410M/LM HYM540410TM/LTM 1CE09-00-MAY93 PDF

    Untitled

    Abstract: No abstract text available
    Text: • • H Y U N D A I H Y 5 1 4 1 7 0 B S e r ie s 256KX 16-bit CMOS DRAM with 2 WE PRELIMINARY DESCRIPTION The HY514170B is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advanced submicron CMOS process technology and advanced circuit design technique to achieve fast access


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    256KX 16-bit HY514170B 400mil 40pin 40/44pin 1AC21-00-MAY94 PQS702 PDF

    HY5117400B

    Abstract: 1AD4
    Text: HY5117400B Series “H Y U N D A I 4M X 4-bit CMOS DRAM DESCRIPTION The HY5117400B is the new generation and fast dynam ic RAM organized 4,194,304 x 4-bit. The HY5117400B utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


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    HY5117400B 12T/BSC 1A048-00-MAY9S 5117400BJ HY5117400BSLJ HY5117400BT 1AD4 PDF

    Untitled

    Abstract: No abstract text available
    Text: HY588321 Series •HYUNDAI 256K X 32-bit Syncronous Graphic RAM PRELIMINARY SPEC Introduction Overview The eight megabit Synchronous Graphics RAM SGRAM is a single port, application specific memory device designed for graphics applications. It is organized as 128K words per bank x 32 bits per word x 2 banks. Internally,


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    HY588321 32-bit 1SC01-00-MAY95 D0DS032 DDDSD33 HY588321QF 14mm2 PDF

    Untitled

    Abstract: No abstract text available
    Text: H Y 5 1 V 4 2 6 0 B •HYUNDAI S e r ie s 256KX 16-bit CMOS DRAM with 2 CAS PRELIMINARY DESCRIPTION The HY51V4260B is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advanced submicron CM OS process technology and advanced circuit design technique to achieve


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    256KX 16-bit HY51V4260B 400mil 40pin 40/44pin 1AC26-00-MAY94 4b75Gflfl PDF

    Untitled

    Abstract: No abstract text available
    Text: HY U NDAI HYM594000B Series SEMICONDUCTOR 4M X 9-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM594000B is a 4M x 9-bit Fast page mode CMOS DRAM module consisting of two HY5117400 in 24/28 pin SOJ and one HY514100A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22|iF decoupling


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    HYM594000B HY5117400 HY514100A HYM594000BM/BLM compa-MAY93 DD16B2 4k750flA 0Q01flfl3 PDF

    Untitled

    Abstract: No abstract text available
    Text: - H Y U N D H Y 5 2 1 6 2 5 6 A I S e r ie s 256K X 16-bit Video RAM with 2CAS Introduction O verview The 4megabit Video RAM is an application specific memory device designed for graphics applications. It comprises a 256k x16 DRAM memory array interfaced to a 256 x16 Serial Access Memory SAM , or register.


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    16-bit 16bits asynchronou84 1VC01-00-MAY95 HY5216256 525mil 64pin PDF