KDS 4.000 Crystal
Abstract: KDS 4.000 oscillator
Text: MICRF2 229 40 00MHz to 4 450MHz AS SK/OOK Re eceiver with Auto-Poll and RSSI Gen neral Desc cription Featu ures The MICRF229 is a 00MHz to 45 50MHz supe err with automatic ga ain heterrodyne, image-reject, RF receiver contrrol, ASK/OOK K demodulato or, and analo
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00MHz
450MHz
MICRF229
400MHz
50MHz
CRF229
1625H
34kHz
92MHz,
KDS 4.000 Crystal
KDS 4.000 oscillator
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Untitled
Abstract: No abstract text available
Text: S c h e m a tic : r H .j Isolation Voltage: 1500 Vrms Input to Output Isolation Voltage: 500 Vrms (P1+2+3 to P4+5+6) Turns Ratio: TX 1CT:1CT ±3 % RX 1CT:1CT ±3% CABLE SIDE OCL: 350uH Minimum @100KHz lODmV 8mADC Cw/w: 27pF Typical @100KHz 100mV Insertion Loss (300KHz-1 00MHz): — 1.OdB Max
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350uH
100KHz
100rnV
300KHz-100MHz)
30MHz
-18dB
80MHz
-70dB
30MHz
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1803
Abstract: No abstract text available
Text: S c h e m a tic : Isolation Voltage: 1500Vrms INPUT to OUTPUT , 500Vrms(TD to RD) UTP SIDE OCL: 350uH Min @100KHz 100mV 8mADC Rise Time (1 0 —90%): 2.5ns Typical Insertion Loss (300KHz—00MHz): —1.1 dB Maximum Insertion Loss (1 00MHz—125MHz): —1.5dB Maximum
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1500Vrms
500Vrms
350uH
100KHz
100mV
300KHz-100MHz)
100MHz-125MHz)
-18dB
30MHz
80MHz
1803
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GR10
Abstract: No abstract text available
Text: S c h e m a tic : '1 r' .j Isolation Voltage: 1500 Vrms INPUT to OUTPUT UTP SIDE OCL: 35DuH Min @100KHz 100mV 8mADC Rise T im e ( 1 0 —9 0% ): In s e rtio n 2 .5 n s Typical Loss (1 DQKHz—10QMHz): —1 .1d B M a x im u m Insertion Loss (1 00MHz—125MHz): —1.5dB Maximum
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350uH
100KHz
100rnV
DOKHz-100MHz)
100MHz-125MHz)
-18dB
30MHz
80MHz
10OKHzâ
60MHz
GR10
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CL 2183 ic
Abstract: 2sc2183 5t30 2sc 869
Text: SILICON NPN EPITAXIAL PLANAR TRANSIS! o 00MHz » n * m £ i 8 *ttifig>M • *00MHz Land Mobile Radio RP Power Amplifier I Application (Low Supply Voltage Use) 4 7 0MH* T 1 6W(Typ. ) ° îo w m u m m m , m e tm m m i L x M m r - t , ° 1 6 W (Typ. ) Power Output at 7 0 0MH*.
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400MHz
400MHz
/IB-10
f-470MHi
VCC-12
VCQ-12
-470MHz
CL 2183 ic
2sc2183
5t30
2sc 869
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Untitled
Abstract: No abstract text available
Text: Sch em atic: One of Four E lectrical S p ecificatio n s: @25°C Isolation Voltage: 1500 Vrm s (INPUT to OUTPUT) UTP SIDE OCL: 350uH Min @100KHz 100mV 8mADC Rise Time (1 0 — 90%): 2.5ns Typical Insertion Loss (1 OOKHz— 00MHz): — 1.1 dB Maximum Insertion Loss (1 00MHz— 125MHz): — 1.5dB Maximum
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350uH
100KHz
100mV
100KHz-100MHz)
100MHz-125MHz)
-20dB
30MHz
80MHz
10OKHzâ
60MHz
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150D
Abstract: No abstract text available
Text: S ch e m a tic: o n e o f tw o l~~ 1 IC T rlC T J ISOLATION: 150D Vrms TURNS RATIO: (P R I/S E C ) 1CT:1 CT ±2% OCL: 350uH MIN @ 100KHz 100m V SmADC Rise Tim e: 1.75na Max. INSERTION LOSS: -1 .0 d B MAX fl>1 M H z-1 00MHz —1.5dB MAX & 1 0 0 -1 2 5 M H Z
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350uH
100KHz
100mV
00MHz
100-125MHz
1-30MHz
-15dB
B40MHz
050MHz
60-8DMHZ
150D
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Untitled
Abstract: No abstract text available
Text: S c h e m a tic : r TX RX .J Isolation Voltage: 1500Vac Isolation Voltage: 500Vac 1 + 2 + 3 + 5 + 6 + 7 UTP SIDE OCL: 350uH Min 100KH z 100mV, 8mAdc Rise Time (1 0 — 90%): 2.5ns Typical Insertion Loss (300K H z— 00MHz): — 1.1 dB Maximum Insertion Loss (1 00MHz— 125MHz): — 1.5dB Maximum
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1500Vac
500Vac
350uH
100KHz
100mV,
300KHz-100MHz)
100MHz-125MHz)
-12dB
300KHz
100MHz
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XFATM2QA-STACK6-4
Abstract: No abstract text available
Text: S ch e m atic: E le c tric al Isolation Voltage: S p e c ific atio n s: 25°C 1500 Vrms INPUT to OUTPUT UTP SIDE OCL: 350uH Min @100KHz 100mV 8mADC Rise Time (10—90%): 2.5ns Typical Insertion Loss (100KHz—00MHz): —1.1 dB Maximum Insertion Loss (1 00MHz—125MHz): —1.5dB Maximum
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350uH
100KHz
100mV
100KHz-
100MHz)
100MHz-125MHz)
-20dB
30MHz
80MHz
100KHzâ
XFATM2QA-STACK6-4
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RT-6
Abstract: No abstract text available
Text: Sc in e m a tic : RD + RDRCT TD + TDTCT Electrical S p e c i f i c a t i o n s : @25“C Isolation Voltage: 15 0 0 V rm s INPUT to OUTPUT UTP 5I0U OCL: 0 5 0 u B Min @ 1D 0K H z 1 0 0 m V 8mADC Rise Tim e ( 1 0 —90%): 2.5ns Typica nsertion Loss (1 O O K H z - 1 00MHz): — 1 .1 dB M a x im u m
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B01-4M5
350uH
100mV
00MHz)
00MHz-1
25MHz)
-20dR
30MBz
80MHz
60MHz
RT-6
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schematic rj45
Abstract: No abstract text available
Text: Sch e m a tic: RJ45 8 a 6 o 4 a 3 a 2 a R 1 , R 2 , R 5 ,R4: 75 Electrical Specifications: @25°C solation Voltage: 1500 V rm s INPOT OTP 5IDP OCO: 350uN Min @ 1 0 0 K H z Rise Time (10 —90% : 2.5ns nsertion Loss (lOOKHz — nsertion Loss (1 00MHz — 1 25MHz):
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350uH
100KHz
100mV
00MHz-
25MHz)
-20dB
30MHz
80MHz
-40dB
60MHzâ
schematic rj45
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2SC3953
Abstract: 2SA1538 no243 2SA153 2SC395C T0126 J953 N2437 0/2SC3953-SPICE
Text: Ordering number:EN 2437A 2SA1538/2SC3953 Ñ0.2437A P N P /N P N E p itax ial P la n a r Silicon T ra n sisto rs High-Definition CRT Display Video Output Applications Applications . High-definition CRT display video output, wide-band amp Features . High fT : fT=i|00MHz
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2SA1538/2SC3953
400MHz
120Vmin
T0126
2SC3953
2SA1538
no243
2SA153
2SC395C
J953
N2437
0/2SC3953-SPICE
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2SC2105
Abstract: 10ID transistor 6w F470U
Text: 2SC ilLlCON NPN EPITAXIAL PLANAR TRANSISTOR TENTATIVE o 4 00MHz % mmmiÈtomti&Lm O R e c o m m e n d e d for L o w Volt a g e 1 til 6 W (Min. 13 Power Output = I * ffl INDUSTRIAL APPLICATIONS (10~14V), Unit 4 0 0 M H z Band Power A m p l i f i e r A p p l i c a t i o ns
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2sc2105
470UHz
100/ie
470MHI
2SC2105
10ID
transistor 6w
F470U
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UL84
Abstract: 208H UL84V-0
Text: S ch e m atic: E l e c t r i c a l S p e c i f i c a t i o n s : 25°C Isolation Voltage: 1500 Vrms <g>60Hz 1 MlN Common Mode Rejection: @ 1 —50MHz —30dB Typ @ 5 0 - 130MHz —20dB Typ Crosstalk: @ 1-10M Hz - 4 0 d B Min © 30—60MHz —35dB Min @ 60—1 00MHz —30dB Min
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15DDpF
-50MHz
-30dB
50-130MHz
1-10MHz
-40dB
60MHz
00MHz
1-100MHz)
UL84
208H
UL84V-0
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Untitled
Abstract: No abstract text available
Text: Schem atic; Electrical Specifications: solation Voltage: 1 5 0 0 Vac solation Voltage: 5 0 0 Vac UTR SIDE OCL: Rise Time 550uH 10 —90% : Min @25°C (6+7+8— @100 KHz 100mV 2. 5ns Typica nsertion Loss ( 3 0 0 K H z - 1 00MHz): nsertlon Loss ( 1 0 0 M H z —1 2 5 M H z ) : —1.5dB
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C0MB01â
350uH
100KHz
100mV
300KHz-100MHz)
00MHz-1
25MHz)
-12dB
300KHz
100MHz
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Untitled
Abstract: No abstract text available
Text: S c h e m a tic : E lectrical S p e c if ic a ti o n s : @25”C solation Voltage: 1 500 Vrm s solation Voltage: 5 0 0 Vrnns TURNS RATIO: TX 1CT: 1 ±5% RX UTP 5IDR OCR: 350uH nsertion Return -2 + 3 to 6 + 7 + 8 Minimum 1 CT: 1 CT ±5% @100RHz Ross 3 0 0 R H z —1 00MHz :
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350uH
100KHz
100mV
300KHz-100MHz)
60MHz
80MHz
62MHz
00MHz
May-15-99
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Untitled
Abstract: No abstract text available
Text: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 6 4 5 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. L0C ALL RIGHTS RESERVED. AA REVISIONS DIST 22 LTR DESCRIPTION A REV PER EC 0S 13 - 0 6 4 4 - 0 4 DATE DWN APVD 0 7 M A R 2005 LV DF MECHANICAL: .850
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31MAR2000
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Untitled
Abstract: No abstract text available
Text: 1:1 DOT LOCATES TERM. #1 .610 ±.015 I [15.49 ±.38] P ” I .485 REF. I - | [12.32] p RX L u ü îT 1.135 MAX. [28.83] .088 REF. [2.24] TX 7 > <- LOT CODE ft DATE CODE .018 X .010(40 46 X .25] TERM. NO.'s FOR REF. ONLY TX .610 ±.015 [15.49 ±.38] .047 ±.010(40)
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-35dB
100MHz.
-30dB
-25dB
127mm]
PDFP-G40
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Untitled
Abstract: No abstract text available
Text: ill# ICW 0RKS Advance Information W40S11-02 SDRAM Buffer - 2 DIMM Mobile Features Key Specifications • Ten skew controlled CMOS outputs (SDRAM0:9) S upply Voltages: • Supports two SDRAM DIMMs Operating Tem perature: • Ideal for high perform ance system s designed around
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W40S11-02
133MHz
133MHz
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Untitled
Abstract: No abstract text available
Text: THE INFORMATION CONTAINED HEREIN IS CONSIDERED 'PR O PR IE TA R Y' TO B E L FUSE INC. AND SH ALL NOT BE COPIED, REPRODUCED OR DISCLOSED WITHOUT THE WRITTEN A PPR O VAL OF B E L FUSE INC, ELECTRICAL TURNS BI-CDLDR LED POLARITY CHARACTERISTICS CDLDR - + GREEN
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DC002
0873-2X8R-66
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4HSC
Abstract: No abstract text available
Text: 1. Mechanical Dimensions: ~ 0.730 M ax 3. Electrical Specifications: @25°C ISOLATION: - c G.245 TU R N S 1500 Vrm s RATIO: INSERTION LOSS: -1 .0 d B 0 .0 0 4 ^ RETURN LOSS: - 1 B d B E -1 2 d B 0.050 000000000000“ in X • a XFGIA1QOPOL Qa CD -J L -0 .0 3 0
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350uH
100KHz
100mV
0/350mA
E151550
102mm)
10OOBA5E-T
Mar-29
Mar-29-08
4HSC
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DEC2007
Abstract: Xfwbc11t
Text: 2 . Schem atic: 1. M e c h a n ic a l D im e n s i o n s : 6 O- 3T 6T -o 3T 4 -o o- 3. E l e c t r i c a l S p e c i f i c a t i o n s : @25°C F re q u e n c y c 3.50 Max 1 .2 7 R ange: 0 .4 —500M H z Insertion Loss: 3dB Max <90.4-5 0 0 M H z Insertion Loss: 2dB Max 0 .5 -3 0 0 M H z
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MIL-STD-202,
E151556
500MHz
4-500MHz
5-300MHz
0-100MHz
0-10DMHz
DEC2007
Xfwbc11t
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xfatm2b3
Abstract: No abstract text available
Text: 2 . S c h e m a tic : 1. Dim ensions: -a 1J 1CT:1CT Cl -0 16 TX-I- - — 0 .5 0 Max —- •^15 CT o C 0.Z20 Max MHHHHHHHH q u u u -a 14 T X - Q CHIP SIDE 0 .0 3 D — I 0.01 6 1CT:1CT RD+ 6 O 11 RX+ CT ■o 10 CT 09 RX- 7 RD- B CABLE SIDE E 0 .3 5 0 -I |— 0 . 3 5 0 j p
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350jp
MIL-5TD-Z02G,
UL94V-0
155TC.
EI515S8
00KHz-100MHz)
100MHz-125MHz)
30MHz
-20dB
xfatm2b3
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930MHZ
Abstract: No abstract text available
Text: 1. S c h e m a t i c : S in gle n P o rt 1CTl1CT 1 L e ft LED Right LED .J ISOLATION 15D0 Vrma TURNS RATIO: (PRI/SEC) 1CTMCT ±3% OCL; 35ÛUH MIN tìH M K H z 100mV SmADC R is e T im e : 1 .7 5 n a M ax. INSERTION LOSS: -1 .0 d B MAX 01 MHz-100M Hz - 1 ,5dB MAX 0 1 0 0 - 1 Z 5 M H Z
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35QuH
100mV
Hz-100MHz
100-lZ5Mhz
-18dB
1-30MHz
840MHz
50MHz
-10dB
930MHz
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