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    TE Connectivity YCTD126E01AC098000

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    Abstract: No abstract text available
    Text: Characterization of atomic layer deposition HfO2, Al2O3, and plasmaenhanced chemical vapor deposition Si3N4 as metal–insulator–metal capacitor dielectric for GaAs HBT technology Jiro Yota,a Hong Shen, and Ravi Ramanathan Skyworks Solutions, Inc., 2427 W. Hillcrest Drive, Newbury Park, California 91320


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    ALD HfO2 and Al2O3 as MIM Capacitor Dielectric for GaAs HBT Technology

    Abstract: No abstract text available
    Text: ALD HfO2 and Al2O3 as MIM Capacitor Dielectric for GaAs HBT Technology Jiro Yota GaAs Technology, Skyworks Solutions, Inc. 2427 W. Hillcrest Drive, Newbury Park, CA 91320, USA [email protected] Hafnium dioxide HfO2 and aluminum oxide (Al2O3) films have


    Original     		01AC09 ALD HfO2 and Al2O3 as MIM Capacitor Dielectric for GaAs HBT Technology PDF