DS1220
Abstract: M48Z02 M48Z12 24-Pin Plastic DIP
Text: M48Z02 M48Z12 5 V, 16 Kbit 2 Kb x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM and powerfail control circuit ■ Unlimited WRITE cycles ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection
|
Original
|
M48Z02
M48Z12
M48Z02:
M48Z12:
PCDIP24
DS1220
M48Z02
M48Z12
24-Pin Plastic DIP
|
PDF
|
DS1225
Abstract: M48Z08 M48Z18
Text: M48Z08 M48Z18 5 V, 64 Kbit 8 Kb x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM and powerfail control circuit ■ Unlimited WRITE cycles ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection
|
Original
|
M48Z08
M48Z18
M48Z08:
M48Z18:
PCDIP28
DS1225
M48Z08
M48Z18
|
PDF
|
bit 3102
Abstract: DS12887 M48T86 M4T28-BR12SH SOH28
Text: M48T86 5.0 V PC real-time clock Not For New Design Features • Drop-in replacement for PC computer clock/calendar ■ Counts seconds, minutes, hours, days, day of the week, date, month, and year with leap year compensation ■ Clock accuracy better than ±1 minute per
|
Original
|
M48T86
PCDIP24
bit 3102
DS12887
M48T86
M4T28-BR12SH
SOH28
|
PDF
|
Untitled
Abstract: No abstract text available
Text: M29DW640D 64 Mbit 8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ – VPP =12V for Fast Program (optional)
|
Original
|
M29DW640D
TSOP48
24Mbit
TFBGA63
|
PDF
|
Untitled
Abstract: No abstract text available
Text: M29DW640D 64 Mbit 8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS PAGE READ MODE
|
Original
|
M29DW640D
TSOP48
24Mbit
TFBGA63
|
PDF
|
Untitled
Abstract: No abstract text available
Text: M29DW640D 64 Mbit 8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional)
|
Original
|
M29DW640D
24Mbit
|
PDF
|
Untitled
Abstract: No abstract text available
Text: M29DW640D 64 Mbit 8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ – VPP =12V for Fast Program (optional)
|
Original
|
M29DW640D
TSOP48
24Mbit
TFBGA63
|
PDF
|
DS1225
Abstract: M48Z08 M48Z18
Text: M48Z08 M48Z18 5 V 64 Kbit 8 Kb x 8 ZEROPOWER SRAM Features • Integrated, ultralow power SRAM and powerfail control circuit ■ Unlimited WRITE cycles ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection
|
Original
|
M48Z08
M48Z18
M48Z08:
M48Z18:
PCDIP28
DS1225
M48Z08
M48Z18
|
PDF
|
Untitled
Abstract: No abstract text available
Text: M48Z08 M48Z18 5 V, 64 Kbit 8 Kb x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM and powerfail control circuit ■ Unlimited WRITE cycles ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection
|
Original
|
M48Z08
M48Z18
M48Z08:
M48Z18:
PCDIP28
|
PDF
|
74247 pin configuration
Abstract: 74247
Text: Part Number 856111 73.5896 MHz SAW Filter Data Sheet Features • • • • • • • For CDMA basestation IF applications Usable bandwidth of 1.2 MHz Low loss High attenuation Single-ended operation Ceramic Surface Mount Package SMP Package Pin Configuration
|
Original
|
15mm/-0
01-Apr-2003
74247 pin configuration
74247
|
PDF
|
Untitled
Abstract: No abstract text available
Text: M48T58 M48T58Y 5.0 V, 64 Kbit 8 Kb x 8 TIMEKEEPER SRAM Features • ■ Integrated, ultra low power SRAM, real-time clock, power-fail control circuit and battery BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds
|
Original
|
M48T58
M48T58Y
M48T58:
M48T58Y:
PCDIP28
|
PDF
|
M48T59
Abstract: M48T59V M48T59Y M4T28-BR12SH1 SOH28
Text: M48T59 M48T59Y, M48T59V 5.0 or 3.3 V, 64 Kbit 8 Kbit x 8 TIMEKEEPER SRAM Not For New Design Features • Integrated ultra low power SRAM, real-time clock, power-fail control circuit, and battery ■ Frequency test output for real-time clock software calibration
|
Original
|
M48T59
M48T59Y,
M48T59V
M48T59:
M48T59Y:
M48T59V
M48T59
M48T59Y
M4T28-BR12SH1
SOH28
|
PDF
|
DS12887
Abstract: M48T86 M4T28-BR12SH SOH28
Text: M48T86 5.0 V PC real-time clock Features • Drop-in replacement for PC computer clock/calendar ■ Counts seconds, minutes, hours, days, day of the week, date, month, and year with leap year compensation ■ Clock accuracy better than ±1 minute per month
|
Original
|
M48T86
PCDIP24
500ms
DS12887
M48T86
M4T28-BR12SH
SOH28
|
PDF
|
Untitled
Abstract: No abstract text available
Text: M48Z08 M48Z18 5 V, 64 Kbit 8 Kb x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM and powerfail control circuit ■ Unlimited WRITE cycles ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection
|
Original
|
M48Z08
M48Z18
M48Z08:
M48Z18:
PCDIP28
M48Z08,
|
PDF
|
|
|
1TJS125FH2A212
Abstract: 1TJS125 m41t06 KDS DT-38
Text: M41T0 Serial real-time clock Features • Counters for seconds, minutes, hours, day, date, month, years, and century ■ 32 KHz crystal oscillator integrating load capacitance 12.5 pF providing exceptional oscillator stability and high crystal series resistance operation
|
Original
|
M41T0
1TJS125FH2A212
1TJS125
m41t06
KDS DT-38
|
PDF
|
M48T59
Abstract: M48T59V M48T59Y M4T28-BR12SH1 SOH28 EP-28-1
Text: M48T59 M48T59Y, M48T59V 5.0 or 3.3 V, 64 Kbit 8 Kbit x 8 TIMEKEEPER SRAM Not For New Design Features • Integrated ultra low power SRAM, real-time clock, power-fail control circuit, and battery ■ Frequency test output for real-time clock software calibration
|
Original
|
M48T59
M48T59Y,
M48T59V
M48T59:
M48T59Y:
M48T59V
PCDIP28
28-lead
M48T59
M48T59Y
M4T28-BR12SH1
SOH28
EP-28-1
|
PDF
|
Untitled
Abstract: No abstract text available
Text: M48Z02 M48Z12 5 V, 16 Kbit 2 Kb x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM and powerfail control circuit ■ Unlimited WRITE cycles ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection
|
Original
|
M48Z02
M48Z12
M48Z02:
M48Z12:
PCDIP24
|
PDF
|
M48T58
Abstract: M48T58Y SOH28
Text: M48T58 M48T58Y 5.0 V, 64 Kbit 8 Kb x 8 TIMEKEEPER SRAM Features • Integrated, ultra low power SRAM, real-time clock, power-fail control circuit and battery ■ BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds
|
Original
|
M48T58
M48T58Y
M48T58:
M48T58Y:
PCDIP28
M48T58
M48T58Y
SOH28
|
PDF
|
M48T58
Abstract: STMicroelectronics
Text: M48T58 M48T58Y 5.0 V, 64 Kbit 8 Kb x 8 TIMEKEEPER SRAM Features • Integrated, ultra low power SRAM, real-time clock, power-fail control circuit and battery ■ BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds
|
Original
|
M48T58
M48T58Y
M48T58:
M48T58Y:
28-lead
STMicroelectronics
|
PDF
|
M41T01
Abstract: M41T0 SMD crystal unit
Text: M41T0 Serial real-time clock Features • Counters for seconds, minutes, hours, day, date, month, years, and century ■ 32 KHz crystal oscillator integrating load capacitance 12.5 pF providing exceptional oscillator stability and high crystal series resistance operation
|
Original
|
M41T0
M41T01
M41T0
SMD crystal unit
|
PDF
|
x13003 TRANSISTOR
Abstract: x13003 transistor X13003 STX13003-AP X13003G transistor STX13003 STX13003G-AP STX13003 STX13003G JESD97
Text: STX13003 High voltage fast-switching NPN power transistor Features • High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Compact fluorescent lamps CFLs
|
Original
|
STX13003
O-92AP
STX13003G
STX13003G-AP
x13003 TRANSISTOR
x13003
transistor X13003
STX13003-AP
X13003G
transistor STX13003
STX13003
JESD97
|
PDF
|
M48T58
Abstract: M48T58Y SOH28
Text: M48T58 M48T58Y 5.0V, 64 Kbit 8 Kb x 8 TIMEKEEPER SRAM Features • Integrated, ultra low power SRAM, real time clock, power-fail control circuit and battery ■ BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds
|
Original
|
M48T58
M48T58Y
PCDIP28
M48T58:
M48T58Y:
28-lead
M48T58
M48T58Y
SOH28
|
PDF
|
A11-A21
Abstract: A0-A21 M29DW640D M29DW640DB 3A800
Text: M29DW640D 64 Mbit 8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ – VPP =12V for Fast Program (optional)
|
Original
|
M29DW640D
TSOP48
24Mbit
TFBGA63
A11-A21
A0-A21
M29DW640D
M29DW640DB
3A800
|
PDF
|
Untitled
Abstract: No abstract text available
Text: M29DW640D 64 Mbit 8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ – VPP =12V for Fast Program (optional)
|
Original
|
M29DW640D
TSOP48
24Mbit
TFBGA63
|
PDF
|