Untitled
Abstract: No abstract text available
Text: DB101S ~ DB107S VOLTAGE 50 V ~ 1000 V 1.0 Amp Surface Mount Bridge Rectifiers Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DB1-S FEATURES z z z z z z .047 1.2 .037(0.95) Low forward voltage drop, high current capability
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DB101S
DB107S
300us
01-June-2005
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Untitled
Abstract: No abstract text available
Text: EMZ1 0.15 W, ±150 mA, ±60 V Silicon Epitaxial Planar Power Management Dual Transistors Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES z 2SA1037AK and 2SC2412K are housed independently in a package.
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2SA1037AK
2SC2412K
OT-563
01-June-2005
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Untitled
Abstract: No abstract text available
Text: KSA928ATL PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURE TO-92L Audio power amplifier Complement to application G H 1Emitter 2Collector 3Base J A D Collector 2
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KSA928ATL
O-92L
-500mA
-30mA
01-June-2005
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Untitled
Abstract: No abstract text available
Text: KTA1273TL PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURE TO-92L Complementary NPN type available KTC3205TL G H 1Emitter 2Collector 3Base J A Collector D 2 REF.
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KTA1273TL
O-92L
KTC3205TL
-500mA
-30mA
01-June-2005
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Untitled
Abstract: No abstract text available
Text: DB201S ~ DB207S VOLTAGE 50 V ~ 1000 V 2.0 Amp Surface Mount Bridge Rectifiers Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DB1-S FEATURES Low forward voltage drop, high current capability Rating to 1000V PRV
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DB201S
DB207S
300us
01-June-2005
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Untitled
Abstract: No abstract text available
Text: STT6405 -5.0 A, -30 V, RDS ON 50 mΩ P-Channel Enhancement Mode Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION The STT6405 uses advanced trench technology to provide excellent on-resistance with low gate change. The device is
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STT6405
STT6405
00A/us
width300us,
156/W
01-June-2005
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KTD1304
Abstract: vebo-12v D 2040
Text: KTD1304 0.3 A, 25 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES z z High emitter-base voltage: VEBO=12V Min low on resistance: Ron=0.6Ω(max)(IB=1mA) PACKAGE DIMENSIONS
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KTD1304
OT-23
01-June-2005
KTD1304
vebo-12v
D 2040
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S8050T
Abstract: D385
Text: S8050T NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES 3.5 0.2 1.27 Typ. 1.25 0.2 z Complimentary to S8550T Collector Current: IC = 0.5 A 0.2 0.2 1 2 3
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S8050T
S8550T
01-June-2005
S8050T
D385
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SSE75N75H
Abstract: No abstract text available
Text: SSE75N75H 80 A, 75 V, RDS ON 11 mΩ N-Channel Enhancement Mode Power Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION The SSE75N75H uses advanced trench technology to provide excellent on-resistance extremely efficient and
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SSE75N75H
SSE75N75H
O-220)
01-June-2005
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Untitled
Abstract: No abstract text available
Text: SS8050 NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES SOT-23 Power dissipation PCM : 0.3 W Collector Current ICM : 1.5 A Collector-base voltage V BR CBO : 40 V
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SS8050
OT-23
500mA
30MHz
01-June-2005
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117h68
Abstract: CR10 J-STD-020B
Text: M30L0R7000T1 M30L0R7000B1 128 Mbit 8Mb x16, Multiple Bank, Multi-Level, Burst 1.8V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for I/O Buffers
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M30L0R7000T1
M30L0R7000B1
54MHz
117h68
CR10
J-STD-020B
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Untitled
Abstract: No abstract text available
Text: UMZ1N 0.15 W, ±150 mA, ±60 V Silicon Epitaxial Planar Power Management Dual Transistors Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES z 2SA1037AK and 2SC2412K are housed independently in a package.
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2SA1037AK
2SC2412K
OT-363
026TYP
65TYP)
021REF
01-June-2005
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SR540S
Abstract: No abstract text available
Text: SR540S VOLTAGE 40 V 5.0 Amp Schottky Barrier Rectifiers Elektronische Bauelemente RoHS compliant product A suffix of “-C” specifies halogen free TO-220A B N D E FEATURES z z z z z 2 Low forward voltage drop High current capability High reliability High surge current capability
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SR540S
O-220A
UL94V-0
MIL-STD-202
01-June-2005
SR540S
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DB207
Abstract: DB207S 201S 202S 203S 204S DB201S
Text: DB201S ~ DB207S VOLTAGE 50 V ~ 1000 V 2.0 Amp Surface Mount Bridge Rectifiers Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DB1-S FEATURES z z z z z z .047 1.2 .037(0.95) Low forward voltage drop, high current capability
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DB201S
DB207S
300us
01-June-2005
DB207
DB207S
201S
202S
203S
204S
DB201S
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BBV marking
Abstract: 2SD2114
Text: 2SD2114 0.5 A, 25 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES z z z High DC current gain :hFE = 1200 Typ High emitter-base voltage. VEBO =12V (Min.) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC/IB=500mA / 20mA)
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2SD2114
500mA
OT-23
500mA,
100MHz
01-June-2005
BBV marking
2SD2114
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zener diode marking code C3 sot23
Abstract: sot-23 DIODE marking code D3 zener 4.7v ZENER DIODES E-1 sot-23 Marking J3 zener diode 4.7V Zener Diode SOT-23 marking kh5 ZENER DIODES SOT-23 10v zener ZENER DIODE E1
Text: MMBZ52xxx Series 300 mW SOT-23 Series Surface Mount Zener Voltage Regulator Diodes Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES z z z z A Planar Die Construction 300 mW Power Dissipation on FR-4 PCB
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MMBZ52xxx
OT-23
OT-23
OT-23,
MIL-STD-202,
01-June-2005
zener diode marking code C3 sot23
sot-23 DIODE marking code D3
zener 4.7v
ZENER DIODES E-1
sot-23 Marking J3
zener diode 4.7V
Zener Diode SOT-23 marking kh5
ZENER DIODES SOT-23
10v zener
ZENER DIODE E1
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smd code "67A" pwm
Abstract: ic 67a smd PXA270 jtag flash programming PXA270 instruction set smd 67A switching PXA270 Intel XScale PXA270 BT-UART pxa270 PHYCORE-PXA270 Atmel 122 24C08
Text: phyCORE-PXA270 Hardware Manual Edition March 2006 A product of a PHYTEC Technology Holding company phyCORE-PXA270 In this manual are descriptions for copyrighted products that are not explicitly indicated as such. The absence of the trademark and copyright ( ) symbols
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phyCORE-PXA270
L-667e
D-55135
smd code "67A" pwm
ic 67a smd
PXA270 jtag flash programming
PXA270 instruction set
smd 67A switching
PXA270
Intel XScale PXA270
BT-UART pxa270
PHYCORE-PXA270
Atmel 122 24C08
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MMDT4944
Abstract: marking code 5 marking code LY sot-353 marking LGR ly transistor F MARKING
Text: MMDT4944 NPN+NPN Dual-Chip Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-353 FEATURES z Small package dual type z High voltage and high current z High hFE, Excellent hFE linearity
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MMDT4944
OT-353
0081g
01-June-2005
MMDT4944
marking code 5
marking code LY sot-353
marking LGR
ly transistor
F MARKING
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206G
Abstract: 208G
Text: GBP2005G ~ GBP210G VOLTAGE 50 V ~ 1000 V 2.0 Amp Glass Passivated Bridge Rectifiers Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free GBP FEATURES z z z z .110X45 2.8 Surge overload rating – 60 amperes peak
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GBP2005G
GBP210G
110X45
300us
01-June-2005
206G
208G
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WR1 marking code
Abstract: transistor marking wr1 sot-23 2SD602 2SD602A WR1 SOT23 transistor marking wr1 2SB710 2SB710A marking code WR1
Text: 2SD602, 602A NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES z z z SOT-23 3 Collector For general amplification Complementary to 2SB710 and 2SB710A Low collector to emitter saturation voltage VCE sat
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2SD602,
OT-23
2SB710
2SB710A
2SD602:
2SD602A:
300mA,
200MHz
01-June-2005
2SD602
WR1 marking code
transistor marking wr1 sot-23
2SD602
2SD602A
WR1 SOT23
transistor marking wr1
2SB710A
marking code WR1
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04N03
Abstract: sse04n03
Text: SSE04N03 80 A, 25 V, RDS ON 5 mΩ N-Channel Logic Level Enhancement Mode Power Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION TO-220 The SSE04N03 provide the designer with the best combination of fast switching, ruggedized device design,
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SSE04N03
O-220
SSE04N03
O-220)
01-June-2005
04N03
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n fet 60v 3a
Abstract: No abstract text available
Text: SST2610 3 A, 60 V, RDS ON 90 mΩ N-Channel Enhancement Mode Power Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION z z The SST2610 uses advanced processing techniques to achieve the lowest possible on-resistance,
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SST2610
SST2610
00A/s
width300us,
01-June-2005
n fet 60v 3a
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2SC3838
Abstract: No abstract text available
Text: 2SC3838 50 mA, 20 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES z z z SOT-23 Collector High transition frequency Small rbb’•Cc and high gain Small NF
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2SC3838
OT-23
0078g
500MHz,
500MHz
01-June-2005
2SC3838
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. - , - LOC ALL RIGHTS RESERVED. DIST R E V IS IO N S 22 AA LTR DESCRIPTION DATE EC 0S 11 - 0 2 0 1 - 0 4 31JUNE200S: MATERIAL: HOUSING - HTN NYLON, REFLOW COMPATIBLE, UL 9 4 V - 0 .
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31JUNE200S:
01JUNE2005
31MAR2000
JUNE2005
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