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    01N60C3 Search Results

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    01N60C3 Price and Stock

    Infineon Technologies AG SPS01N60C3

    MOSFET N-CH 650V 800MA TO251-3
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    DigiKey SPS01N60C3 Tube
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    Rochester Electronics SPS01N60C3 43,500 1
    • 1 $0.3056
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    • 100 $0.2873
    • 1000 $0.2598
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    Rochester Electronics LLC SPS01N60C3

    MOSFET N-CH 650V 800MA TO251-3
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    DigiKey SPS01N60C3 Tube 944
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    Infineon Technologies AG SPN01N60C3

    MOSFET N-CH 650V 300MA SOT223-4
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    DigiKey SPN01N60C3 Reel 1,000
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    ComSIT USA SPN01N60C3 2,635
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    Infineon Technologies AG SPU01N60C3BKMA1

    MOSFET N-CH 650V 800MA TO251-3
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    Rochester Electronics SPU01N60C3BKMA1 180,631 1
    • 1 $0.4028
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    • 100 $0.3786
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    Rochester Electronics LLC SPS01N60C3BKMA1

    0.8A, 600V, N-CHANNEL MOSFET, T
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    DigiKey SPS01N60C3BKMA1 Bulk 701
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    01N60C3 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    01n60

    Abstract: 01N60C3 SPS01N60C3
    Text: 01N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 6 Ω ID 0.8 A • New revolutionary high voltage technology • Ultra low gate charge PG-TO251-3-11 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPS01N60C3 PG-TO251-3-11 PG-TO251-3-11 01N60C3 01n60 01N60C3 SPS01N60C3

    01N60C3

    Abstract: SPN01N60C3 VPS05163 smd diode MARKING 03A
    Text: 01N60C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 6 Ω ID 0.3 A SOT-223 • Extreme dv/dt rated • Ultra low effective capacitances 4 • Improved transconductance


    Original     		PDF SPN01N60C3 OT-223 Q67040-S4208 VPS05163 01N60C3 01N60C3 SPN01N60C3 VPS05163 smd diode MARKING 03A

    STK and STR integrated circuits

    Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
    Text: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram


    Original     		PDF OD-80 OT-223 OT-89 STK and STR integrated circuits transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code

    TRANSISTOR SMD MARKING CODE 2A

    Abstract: 01N60C3 01n60 SPN01N60C3 VPS05163 smd diode MARKING 03A
    Text: 01N60C3 Rev. 2.1 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 6 Ω ID 0.3 A • New revolutionary high voltage technology • Ultra low gate charge SOT-223 • Extreme dv/dt rated • Ultra low effective capacitances 4 • Improved transconductance


    Original     		PDF SPN01N60C3 OT-223 Q67040-S4208 VPS05163 01N60C3 TRANSISTOR SMD MARKING CODE 2A 01N60C3 01n60 SPN01N60C3 VPS05163 smd diode MARKING 03A

    01N60C3

    Abstract: 01N60 603 to252 Q67040-S4188 Q67040-S4193 SPD01N60C3 SPU01N60C3
    Text: 01N60C3 01N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 6 Ω ID 0.8 A • New revolutionary high voltage technology • Ultra low gate charge PG-TO252 • Periodic avalanche rated PG-TO251 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPU01N60C3 SPD01N60C3 PG-TO252 PG-TO251 Q67040-S4193 01N60C3 01N60C3 01N60 603 to252 Q67040-S4188 Q67040-S4193 SPD01N60C3 SPU01N60C3

    01N60C3

    Abstract: P-TO251-3-1 P-TO252 Q67040-S4188 Q67040-S4193 SPD01N60C3 SPU01N60C3 01N60
    Text: 01N60C3 01N60C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 6 Ω ID 0.8 A P-TO252 • Periodic avalanche rated P-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPU01N60C3 SPD01N60C3 P-TO252 P-TO251-3-1 Q67040-S4193 01N60C3 01N60C3 P-TO251-3-1 P-TO252 Q67040-S4188 Q67040-S4193 SPD01N60C3 SPU01N60C3 01N60

    Untitled

    Abstract: No abstract text available
    Text: 01N60C3 01N60C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 6 Ω ID 0.8 A P-TO252 • Periodic avalanche rated P-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPU01N60C3 SPD01N60C3 P-TO252 P-TO251-3-1 P-TO251-3-1 Q67040-S4193 Q67040-S4188

    01n60c3

    Abstract: PG-TO251-3-1
    Text: 01N60C3 01N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 6 Ω ID 0.8 A • New revolutionary high voltage technology • Ultra low gate charge PG-TO252 • Periodic avalanche rated PG-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPU01N60C3 SPD01N60C3 PG-TO252 PG-TO251-3-1 SPD01N60C3 Q67040-S4188 01N60C3 01N60C3 PG-TO251-3-1

    Untitled

    Abstract: No abstract text available
    Text: 01N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 6 Ω ID 0.8 A Feature • New revolutionary high voltage technology • Ultra low gate charge PG-TO251-3-11 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPS01N60C3 PG-TO251-3-11 PG-TO251-3-11 01N60C3 PG-TO-251-3-11

    01N60C

    Abstract: 01n60c3 SPS01N60C3 01N60
    Text: 01N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 6 Ω ID 0.8 A • New revolutionary high voltage technology • Ultra low gate charge PG-TO251-3-11 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPS01N60C3 PG-TO251-3-11 PG-TO251-3-11 01N60C3 PG-TO-251-3-11 01N60C 01n60c3 SPS01N60C3 01N60

    01N60

    Abstract: 01n60c3 P-TO251-3-1 603 marking to252 P-TO252 Q67040-S4188 Q67040-S4193 SPD01N60C3 SPU01N60C3 01N6
    Text: 01N60C3 01N60C3 Rev. 2.0 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 6 Ω ID 0.8 A • New revolutionary high voltage technology • Ultra low gate charge P-TO252 • Periodic avalanche rated P-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPU01N60C3 SPD01N60C3 P-TO252 P-TO251-3-1 Q67040-S4193 01N60C3 01N60 01n60c3 P-TO251-3-1 603 marking to252 P-TO252 Q67040-S4188 Q67040-S4193 SPD01N60C3 SPU01N60C3 01N6

    TO-251 footprint

    Abstract: 01n60c3 603 marking to252 infineon marking TO-252 SPU01N60C3 603 to252 Q67040-S4188 Q67040-S4193 SPD01N60C3 01n60
    Text: 01N60C3 01N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 6 Ω ID 0.8 A • New revolutionary high voltage technology • Ultra low gate charge PG-TO252 • Periodic avalanche rated PG-TO251 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPU01N60C3 SPD01N60C3 PG-TO252 PG-TO251 Q67040-S4193 01N60C3 TO-251 footprint 01n60c3 603 marking to252 infineon marking TO-252 SPU01N60C3 603 to252 Q67040-S4188 Q67040-S4193 SPD01N60C3 01n60

    Untitled

    Abstract: No abstract text available
    Text: 01N60C3 01N60C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 6 Ω ID 0.8 A P-TO252 • Periodic avalanche rated P-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPU01N60C3 SPD01N60C3 P-TO252 P-TO251-3-1 P-TO251-3-1 Q67040-S4193 Q67040-S4188

    PEF 24628

    Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
    Text: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by


    Original     		PDF B192-H6780-G10-X-7600 SP000012954 SP000013610 SP000017969 SP000014627 SP000018085 SP000018086 PEF 24628 PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819

    Untitled

    Abstract: No abstract text available
    Text: 01N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 6 Ω ID 0.3 A • New revolutionary high voltage technology • Ultra low gate charge SOT-223 • Extreme dv/dt rated • Ultra low effective capacitances 4 • Improved transconductance


    Original     		PDF SPN01N60C3 VPS05163 OT-223 SPN01N60C3 Q67040-S4208 01N60C3

    01N60

    Abstract: No abstract text available
    Text: 01N60C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 6 Ω ID 0.3 A SOT-223 • Extreme dv/dt rated • Ultra low effective capacitances 4 • Improved transconductance


    Original     		PDF SPN01N60C3 OT-223 VPS05163 Q67040-S4208 01N60C3 01N60

    Untitled

    Abstract: No abstract text available
    Text: 01N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 6 Ω ID 0.8 A • New revolutionary high voltage technology • Ultra low gate charge PG-TO251-3-11 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPS01N60C3 PG-TO251-3-11 PG-TO251-3-11 01N60C3 PG-TO-251-3-11

    720 TRANSISTOR smd sot-223

    Abstract: 01N60C SPN01N60C3 01N60C3 VPS05163 01N60 Q67040-S4208
    Text: 01N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 6 Ω ID 0.3 A • New revolutionary high voltage technology • Ultra low gate charge SOT-223 • Extreme dv/dt rated • Ultra low effective capacitances 4 • Improved transconductance


    Original     		PDF SPN01N60C3 OT-223 Q67040-S4208 VPS05163 01N60C3 25ngerous 720 TRANSISTOR smd sot-223 01N60C SPN01N60C3 01N60C3 VPS05163 01N60 Q67040-S4208