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    SSP6N70A

    Abstract: No abstract text available
    Text: Advanced SSP6N70A P o w e r MOSFET FEATURES D S S — • A valan che R ugged T ech n o lo g y ■ R ugged G ate O xide T e ch n o lo g y ^D S o n = ■ Lo w e r Input C a pa citance lD = 6 A ■ Im proved G ate C harge ■ E xtended S afe O pe ra ting A rea


    OCR Scan     		SSP6N70A O-220 SSP6N70A PDF

    diode 50v 5A

    Abstract: No abstract text available
    Text: SSW/I5N90A A dvanced Power MOSFET FEATURES _ 900 V ^DSS • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on = ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |iA (Max.) @ VDS = 900V


    OCR Scan     		SSW/I5N90A 14itching diode 50v 5A PDF