Untitled
Abstract: No abstract text available
Text: T Silicon RF Switching Diode 32E D • 023b32Q Q01b4bb 3 n-iz BA 582 I SIP SIEMENS/ SPCL-, SEMICONDS • Low-loss VHF band switch for TV/VTR tuners Cathode Type Marking Ordering code taped Package BA 582 blue/S Q62702-A829 SOD-123 Maximum Ratings Parameter
|
OCR Scan
|
PDF
|
023b32Q
Q01b4bb
Q62702-A829
OD-123
23b320
001b4b7
|
g 995
Abstract: No abstract text available
Text: 32E D m 023b32Q OOlbôQ? 3 H S I P BF 995 Silicon N Channel MOSFET Tetrode SIEMENS/ SPCLi SEMICONDS _ For FM and VHF TV input and mixer stages Type Marking Ordering code for versions in bulk Ordering code for versions on 8 mm-tape Package BF 995 MB Q62702-F872
|
OCR Scan
|
PDF
|
023b32Q
Q62702-F872
Q62702-F936
23b32Ã
g 995
|
SiEMENS PM 350 92
Abstract: No abstract text available
Text: BSE D • 023b32Q 0 0 1 7 2 ^ 2 PNP Silicon Transistors for High Voltages S IE M E N S / SPCL-. 1 WtZIP SMBTA92 SEMICONDS_ SMBTA93 • High breakdown voltage • Low collector-emltter saturation voltage • Complementary types: SMBTA 42, SMBTA 43 NPN
|
OCR Scan
|
PDF
|
023b32Q
SMBTA92
SMBTA93
Q68000-A4338
Q68000-A4339
Q68000-A6479
Q68000-A6483
QQ17S^
SiEMENS PM 350 92
|
Untitled
Abstract: No abstract text available
Text: T - w NPN Silicon AF Transistors 32E D SIEMENS/ • 023b32Q SPCLi Q G lb b ^ 1 - n IS I P BCW 65 BCW 66 SE MI CONDS For general A F applications High current gain Low collector-emitter saturation voltage Complementary types: B C W 67, B C W 68 PNP Type Marking
|
OCR Scan
|
PDF
|
023b32Q
BCW65
23b320
BCW66
|
Untitled
Abstract: No abstract text available
Text: NPN Silicon RF Transistor 35E D • ^ 3 H 7 023b32Q 0011=701 □ H S I P BF775 _ SIEMENS/ SPCL-i SEMICONDS • • Broadband amplifier, mixer, oscillator, and switching applications up to 2 GHz Specially suited for use in TV-sat and UHF TV tuners Type Marking
|
OCR Scan
|
PDF
|
023b32Q
BF775
Q62702-F991
Q62702-F102
23b320
T-31-17
|
Untitled
Abstract: No abstract text available
Text: 32E D • 023b32Q OGIVIOÌ b « S I P SIPMOS N Channel MOSFET BSP 295 SIEMENS/ SPCL-. SEMICONDS T -g ì-O S ' _ Preliminary Data • SIPMOS - enhancement mode • Drain-source voltage Vis = 50V • Continuous drain current I d = 1-7A • Drain-source on-resistance
|
OCR Scan
|
PDF
|
023b32Q
Q67000-S066
T-39-05
|
Q62702-A739
Abstract: Q62702-A726 b32 siemens
Text: S ilic o n S w itc h in g D io d e 32E D • T " ' £ ?3 “ # 7 023b32Q D Q lbM ^fl S IE M E N S / • SPCL-i S B A S 16 H S I P _ S E M IC O N D S For high-speed switching Type Marking Ordering code for versions In bulk Ordering code for versions on 8 mm-tape
|
OCR Scan
|
PDF
|
023b32Q
Q62702-A726
Q62702-A739
23b32ü
Q62702-A739
Q62702-A726
b32 siemens
|
Untitled
Abstract: No abstract text available
Text: BEE D • 023b32Q QGlb7EM T H S I P NPN Silicon RF Transistor BF 517 SIEMENS/ SPCL-. SEMICONDS • r ^ 3 i - t 7 _ Broadband amplifier and oscillator applications up to 1 GHz Type Marking Ordering code for versions In bulk Ordering code for versions on 8 mm-tape
|
OCR Scan
|
PDF
|
023b32Q
Q62702-F988
Q62702-F78
fl23b32Q.
GQlb72b
BF517
T-31-17
|
Untitled
Abstract: No abstract text available
Text: 32E D • Ô23b320 QDlb77D b « S I P NPN Silicon RFTransistor t ^ -3 I—»7 BF 770 A SIEMENS/ SPCLi SEMICONDS • • Low-noise broadband transistor for frequencies up to 2 GHz at collector currents up to 30 mA Specially suitable for IF amplifiers in TV-sat tuners
|
OCR Scan
|
PDF
|
23b320
QDlb77D
Q62702-F1068
Q62702-F1080
023b32Q
QQlb772
BF770A
T-31-17
|
Untitled
Abstract: No abstract text available
Text: BSE I • ÖS3b3Ea CJ017114 T SIPMOS N Channel MOSFET ISIP r - t f - o s - BSP 296 SIEMENS/ SPCL-. SEMICONDS • SIPMOS - enhancement mode • Draln-source voltage Vfo = 100V • Continuous drain current / „ = 1.0A • Drain-source on-resistance • Total power dissipation
|
OCR Scan
|
PDF
|
CJ017114
Q67000-S067
23b320
QCJ1711Ã
|
Untitled
Abstract: No abstract text available
Text: 32E D • Û23b32ü 00170=10 S H S I P SIPM O S N Channel MOSFET SIEMENS/ SPCL-, SEMICONDS T-21- é>5~ _ BSP 125 Preliminary Data • S IP M O S - enhancement mode • Drain-source voltage Vfes = 600V • Continuous drain current lB = .11OA • Drain-source on-resistance
|
OCR Scan
|
PDF
|
23b32Ã
T-21-
62702-S654
S3b32Q
T-39-05
|
Untitled
Abstract: No abstract text available
Text: PNP Silicon AF Transistors 32E D m Û23b320 OOlbbfiS 4 « S I P T 'M - IJ SIEMENS/ SPCL-. SEMICONDS • • • • • a a a a BCW61 BCX71 For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz
|
OCR Scan
|
PDF
|
23b320
BCW61
BCX71
653b350
|
Untitled
Abstract: No abstract text available
Text: 33E D • fl2 3 b 3 2 Q Q O lb S Û S 0 H S IP Silicon Diode Array S IE M E N S / BGX 50 A SPCL-, SEM ICÔ N DS _ • Bridge configuration • High-speed switch diode chip 4 2 Type Marking Ordering code for versions In bulk Ordering code for versions on 8 mm-tape
|
OCR Scan
|
PDF
|
Q62702-G35
Q62702-G38
f-150
T-23-05
rA-25Â
23b320
|
Untitled
Abstract: No abstract text available
Text: 32E D • Ô 2 3 b 3 2 0 OOlbTOÖ 1 « S I P PNP AF Transistors -f- ^ . ^3 S IE M E N S / SPCL-i SEMICONDS BCX 51 BCX 53 For AF driver and output stages High collector current Low collector-em ltter saturation voltage Complementary types: BCX 5 4 - - B C X 5 6 NPN
|
OCR Scan
|
PDF
|
023b32Q
BCX51
BCX53
|
|