dmo 365 r
Abstract: dmo 365 XRT83VSH316IB-F
Text: XRT83VSH316 16-CHANNEL T1/E1/J1 SHORT-HAUL LINE INTERFACE UNIT OCTOBER 2007 REV. 1.0.0 GENERAL DESCRIPTION for external timing 8kHz, 1.544Mhz, 2.048Mhz, nxT1/J1, nxE1 . The XRT83VSH316 is a fully integrated 16-channel short-haul line interface unit (LIU) that operates from
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XRT83VSH316
16-CHANNEL
XRT83VSH316
15-Nov-2010
dmo 365 r
dmo 365
XRT83VSH316IB-F
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Flyback Transformers SANYO TV
Abstract: SMC/A5 GNA mosfet
Text: Application Report SNVA686 – March 2013 LM5023-2EVM Notebook Adapter Terry Allinder . ABSTRACT 1 2 3 4 5 6 7 8 9 1 Contents
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SNVA686
LM5023-2EVM
Flyback Transformers SANYO TV
SMC/A5 GNA mosfet
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dmo 365 r
Abstract: xn03 dmo 365 LCV family characteristics intel 8051 40 pin datasheet intel 8051 and 68HC11 850C XRT83VSH316 XRT83VSH316IB processor cross reference
Text: XRT83VSH316 16-CHANNEL T1/E1/J1 SHORT-HAUL LINE INTERFACE UNIT OCTOBER 2007 REV. 1.0.0 GENERAL DESCRIPTION for external timing 8kHz, 1.544Mhz, 2.048Mhz, nxT1/J1, nxE1 . The XRT83VSH316 is a fully integrated 16-channel short-haul line interface unit (LIU) that operates from
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XRT83VSH316
16-CHANNEL
544Mhz,
048Mhz,
XRT83VSH316
16-channel
dmo 365 r
xn03
dmo 365
LCV family characteristics
intel 8051 40 pin datasheet
intel 8051 and 68HC11
850C
XRT83VSH316IB
processor cross reference
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dmo 365 r
Abstract: dmo 365
Text: XRT83VSH316 16-CHANNEL T1/E1/J1 SHORT-HAUL LINE INTERFACE UNIT FEBRUARY 2009 REV. 1.0.1 GENERAL DESCRIPTION for external timing 8kHz, 1.544Mhz, 2.048Mhz, nxT1/J1, nxE1 . The XRT83VSH316 is a fully integrated 16-channel short-haul line interface unit (LIU) that operates from
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XRT83VSH316
16-CHANNEL
XRT83VSH316
dmo 365 r
dmo 365
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Untitled
Abstract: No abstract text available
Text: UNCONTROLLED DOCUMENT SSP-LB12UW 024K05 PART NUMBER ELECTRO-OPTICAL CHARACTERISTICS TA =25'C PARAMETER MIN INPUT VOLTAGE MAX 24 UNITS ENERGY USED 5 W 360 LUMENS VIEWING ANGLE 120 2x theta 5000 COLOR RENDERING INDEX CRI TEST COND V DC TOTAL LUMENS COLOR TEMP.
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SSP-LB12UW
024K05
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Untitled
Abstract: No abstract text available
Text: DS1345YL/BL •»A a ■ DS1345YL/BL Nonvolatile SRAM with Battery Monitor s a 1 024K U A L L A O s e m ic o n d u c t o r NOT RECOMMENDED FOR NEW DESIGNS. SEE DS1345Y/AB DATA SHEET. FEATURES PIN ASSIGNMENT • B u ilt-in lithium battery provides more than 10 years of
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DS1345YL7BL
DS1345YL/BL
1024K
DS1345Y/AB
D1345YL/BL
34-PIN
68-pin
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l5442
Abstract: No abstract text available
Text: TMS29LF008T, TMS29LF008B 1048576-BYTE BY 8-BIT FLASH MEMORIES I * Single Power Supply Supports 2.7-V and 3.6-V Read/Write Operation • Organization: 1 024K Bytes x 8 Bits • Array Blocking Architecture - One 16K-Byte Protected-Boot Sector Two 8K-Byte Parameter-Sectors
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TMS29LF008T,
TMS29LF008B
1048576-BYTE
SMJS846
40-Pin
4073307/B
6Rbl725
l5442
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Untitled
Abstract: No abstract text available
Text: CYPRESS l,024Kx 32 Static RAM Module Features Functional Description • High-density 32-megabit SRAM module • 32-bit Standard Footprint supports densities from 16K x 32 through IM X 32 T he CYM1851 is a high-perform ance 32-megabit static R A M m odule organized
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024Kx
32-megabit
32-bit
CYM1851
1851PM
72-Pin
1851PN
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Untitled
Abstract: No abstract text available
Text: UNCONTROLLED DOCUMENT SSP—024K03 PART NUM BER REV. ELECTRO-OPTICAL CHARACTERISTICS TA =25’C PARAMETER MIN INPUT VOLTAGE MAX TYP. 24 ENERGY USED 2.5 W 150 LUMENS VIEWING ANGLE 120 2x theta 2600 COLOR RENDERING INDEX CRI 3000 •K Vf=24V DC 80 OPERATING TEMP.
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SSP--LB06MW024K03
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Untitled
Abstract: No abstract text available
Text: fax id: 2052 CYPRESS PRELIMINARY C YM 1851V33 1,024K x 32 3.3V Static RAM Module Features • H ig h -d e n s ity 3.3 V 3 2 -m e g a b it S R A M m o d u le • 32 -b it S tan d ard F o o tp rin t su p p o rts d e n s itie s from 1 6 K x 32 th ro u g h 1 M x 32
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1851V33
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Untitled
Abstract: No abstract text available
Text: ! j * . 024K32-XPBX 024Kx32 FLASH BALL GRID ARRAY PRELIMINARY * FEATURES • Access Times of 9 0 ,150ns ■ Organized as 024Kx32 ■ Perimeter Ball Grid Packaging ■ Commercial and Industrial Temperature Ranges • 35mm BGA: ■ 5 Volt Power Supply, 12 V pp
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WPF1024K32-XPBX
1024Kx32
150ns
1024Kx32
1024Kx8
1024K32
1024K
2048K
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diode E1110
Abstract: lN4002 LN4003 ANA 618 20010 TDB 0123 km b3170 E1110 Diode UB8560D MAA723 moc 2030
Text: elektronik-bauelem ente I WT VD AVL 1 /8 7 Bl. 2 E r l ä u t e r u n g e n z u m I n h a l t und zu d e n A n g a b e n d e r B a u e l e m e n t e - V e r g l e i c h s l i s t e D ie B a u e l e m e n t e - V e r g l e i c h s l i s t e e n t h ä l t a l l e in d e r B i l a n z v e r a n t w o r t u n g d e s V E B K o m b i n a t
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Untitled
Abstract: No abstract text available
Text: fax id: 2052 :/ CYPRESS C Y M 1 8 5 1 V 3 3 1,024K x 32 3.3V Static RAM Module Features • High-density 3.3V 32-m egabit SRAM module • 32-bit Standard Footprint supports densities from 16K x 32 through 1 M x 32 • High-speed SRAMs — Access time of 12 ns
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32-bit
1851V33
72-pin
64-pin
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protection relay type racic
Abstract: transformer 330 MVA 2.5 mva transformer directional static overcurrent relay racic ASEA brown boveri protection relay 026kb overcurrent relay inverse HB relay 10 mva transformer
Text: II li filili ih ASEA B R O W N BOVERI ABB Relays Type RACIC B03-2313E F 6d©r rccucI Changed since January 1985 DrOtGCtiOn piUlCl/llUII January 1 9 8 7 D a ta s ubject to c h a n g e without noti« Abstract Application • Two-phase or three-phase time-overcurrent
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B03-2313E
B03-1110E
B03-2210E
B03-7211E
B03-9352E
B03-9354E
B03-9510E
B03-9301E
B03-9382E
UG03-7210E
protection relay type racic
transformer 330 MVA
2.5 mva transformer
directional static overcurrent relay
racic
ASEA brown boveri protection relay
026kb
overcurrent relay inverse
HB relay
10 mva transformer
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Untitled
Abstract: No abstract text available
Text: UNCONTROLLED DOCUMENT SSP—024K03 PART NUMBER ELECTRO —OPTICAL CHARACTERISTICS TA =25'C PARAMETER MIN INPUT VOLTAGE TYP. MAX 24 UNITS ENERGY USED 2.5 W TOTAL LUMENS 150 LUMENS VIEWING ANGLE 120 2x theta COLOR TEMP. 2600 COLOR RENDERING INDEX CRI
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LB06MW024K03
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77261
Abstract: trc 20020
Text: TMS416400A, TMS417400A 4194304 BY 4-BTT DYNAMIC RANDOM-ACCESS MEMORIES _ SM KSa89B- AUGUST 1996 - REVISED OCTOBER 1997 This data sheet is applicable to all TMS41x400As symbolized by Revision “B”, Revision “E” and subsequent revisions as
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TMS416400A,
TMS417400A
KSa89B-
TMS41x400As
2048-Cycle
4096-Cycle
TMS416400A
77261
trc 20020
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128KX8 SRAM
Abstract: CYM1821 CYM1831 CYM1836 CYM1841 CYM1851 CYM1946 128KX8
Text: fax id: 2045 CYM1946 512K x 32 Static RAM Module Features • H ig h -d e n s ity 16 -m e g a b it S R A M m o d u le • 32 -b it S tan d ard F o o tp rin t su p p o rts d e n s itie s from 16K x 32 th ro u g h 1M x 32 • H ig h -s p e ed S R A M s co n stru cte d from 16 128K x 8 S R A M s in SO J packages
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16-megabit
32-bit
CYM1821,
CYM1831,
CYM1836,
CYM1841,
CYM1851
CYM1946
CYM1946
128KX8 SRAM
CYM1821
CYM1831
CYM1836
CYM1841
128KX8
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Untitled
Abstract: No abstract text available
Text: PANASONIC INDL/ELEK -CIO 72 DE | ^ 3 2 0 5 2 00Dt,Mfl4 4 6932852 PANASONIC IN D L ,E L E C T R O N IC M N 3 3 5 W Æ 7 2C_06 48_4 O i MÑ3305 4 0 9 6 lâ j|§ fë ^ /± B B D 4 096-S tage U ltra Low Voltage Operation B B D for Audio Signals I M N 3 3 0 5 Ü S5 Éfô & 4 0 9 6 fS^ ^ T t h o >
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096-S
MN3305
4096-stage
MN3305
40kHz
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transistor t 2190
Abstract: intel 2114 SmartDie 28F010
Text: inte] 28F010 024K 128K x 8 FLASH MEMORY SmartDie Product Specification Flash Electrical Chip Erase — 1 Second Typical Chip Erase Quick-Pulse Programming Algorithm — 10ns Typical Byte Program — 2 Second Chip Program 100K Erase/Program Cycles Typical
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28F010
1024K
X2BF010-90
ER-20
ER-24,
RR-60,
AP-316,
AP-325,
USA/DP-019/694
transistor t 2190
intel 2114
SmartDie
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Untitled
Abstract: No abstract text available
Text: TMS416400A, TMS417400A 4194304 BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORIES _ SMKS889B- AUGUST 1996 - REVISED OCTOBER 1997 This data sheet is applicable to all TMS41x400As symbolized by Revision “B”, Revision “E" and subsequent revisions as described in the device symbolization section.
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TMS416400A,
TMS417400A
SMKS889B-
TMS41x400As
2048-Cycle
4096-Cycle
TMS416400A
A111C
24ugh
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7400A
Abstract: S889A
Text: TMS416400A, TMS417400A T M S 4 2 6 4 0 0 A , TMS 4 26 4 00 A P, T M S 4 2 7 4 0 0 A , T M S 4 2 7 4 0 0 A P 4 1 9 4 3 Q 4- W O RD BY 4-BI T H I G H - S P E E D D R A M S SMKS889A-AUGUST 1 9 9 6 -REVISED FEBRUARY 1997 This data sheet is applicable to all TMS41x400As
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TMS416400A,
TMS417400A
SMKS889A-AUGUST
TMS41x400As
S42x400A/Ps
7400A
S889A
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TMS4C1024
Abstract: TM024EAD9
Text: TM024EAD9 1 048 576 BY 9-BIT DYNAMIC RAM MODULE SMMS109A— MARCH 1990 — REVISED NOVEMBER 1990 This Data Sheet is Applicable to A ll TM024EAD9S Manufactured With TMS4C1024s Symbolized With Revision "D” and Subsequent Revisions. • T M 024E A D 9 . . . 1 048 5 76 x 9 O rganization
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TM024EAD9
SMMS109A--
TM024EAD9S
TMS4C1024s
30-pin
15put
TMS4C1024
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Untitled
Abstract: No abstract text available
Text: UNCONTROLLED DOCUMENT SSP—024K03 PART NUM BER REV. E LECTflO -O PTlCAL CHARACTERISTICS TA = 2 5 'C PARAMETER MIN INPUT VOLTAGE TYP. MAX 24 E NERGY USED 3 .3 W 220 LUM ENS VIEWING ANGLE 120 2 x theta 5000 6300 □□ □ g g □ □ □ □ D D □
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SSP--LB12UW024K03
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LB12N
Abstract: No abstract text available
Text: UNCONTROLLED DOCUMENT S S P — 024K03 PART NUM BER REV. E LECTflO -O PTlCAL CHARACTERISTICS TA = 2 5 'C PARAMETER MIN INPUT VOLTAGE MAX TYP. 24 E NERGY USED 3 .3 W 220 LUM ENS VIEWING ANGLE 12 0 2 x theta 3700 COLOR RENDERING INDEX C R I 4300 □
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LB12NW024K03
LB12N
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