Untitled
Abstract: No abstract text available
Text: Si3424CDV Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A)a, b 0.026 at VGS = 10 V 8 0.032 at VGS = 4.5 V 8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested
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Original
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Si3424CDV
2002/95/EC
Si3424CDV-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Part Marking Information
Abstract: No abstract text available
Text: Part Marking Information Vishay Semiconductors D-PAK E Part number Example: xxxxxxx V This is a xxxxxxx with assembly lot code YYYY, assembled on WW 12, 2000 in the assembly line “C” Z012C YYYY Assembly lot code Product version optional : Z (replaced according below table)
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Z012C
02-May-11
Part Marking Information
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PDF
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si2329
Abstract: SI2329DS
Text: Si2329DS Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) () ID (A)a 0.030 at VGS = - 4.5 V - 6e 0.036 at VGS = - 2.5 V - 6e 0.048 at VGS = - 1.8 V - 5.9 0.068 at VGS = - 1.5 V -5 0.120 at VGS = - 1.2 V - 3.7 VDS (V) -8
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Original
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Si2329DS
2002/95/EC
O-236
OT-23)
Si2329DS-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
si2329
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product Si1428EDH Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (A)a 0.045 at VGS = 10 V 4 30 0.049 at VGS = 4.5 V 4 0.060 at VGS = 2.5 V 4 Qg (Typ.) 4 nC • Halogen-free According to IEC 61249-2-21 Definition
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Original
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Si1428EDH
2002/95/EC
OT-363
SC-70
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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APCMC-14-0005 REV A
Abstract: No abstract text available
Text: 1 2 3 1.40±0.05 Ø 0.85±0.10 TYP. B±0.30 A±0.10 *Ø1.5±0.10 . 1.80 1.80 1.50 2.54 2.54 1.27±0.05 4 *Ø1.5±0.10 1.27±0.05 1.40±0.05 2.54±0.05 * 1 hole necessary to let IDC nose go through the hole PCB LAYOUT - COMPONENT VIEW 5.00 4.00 3.1 1.27±0.15
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Original
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UL94-V0
100VAC
1000MOHM
500VAC/MN
10mOHM
E323964
69036718xx7x
02-MAY-11
12-MAY-10
07-APR-10
APCMC-14-0005 REV A
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PDF
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Untitled
Abstract: No abstract text available
Text: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: LCP FLAMABILITY RATING: UL94-V0 COLOR: BLUE CONTACT MATERIAL: PHOSPHORE BRONZE CONTACT TYPE: STAMPED CONTACT PLATING: UNDERPLATE 1.27 to 2.54 µm Ni CONTACT AREA 0.76 µm Gold SOLDER TAIL AREA 2.54 to 5.08 µm Matt Tin
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Original
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UL94-V0
2002/95/EC
30Vac
100Vac/min
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PDF
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Untitled
Abstract: No abstract text available
Text: PHP Vishay Dale Thin Film High Power Thin Film Wraparound Chip Resistor FEATURES • • • • • • High purity ceramic substrate Power rating to 2.5 W Resistance range 10 to 30 k Resistor tolerance to ± 0.1 % TCR to ± 25 ppm/°C Flame resistant UL 94 V-0
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Original
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2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: LCP FLAMABILITY RATING: UL94-V0 COLOR: BLUE CONTACT MATERIAL: PHOSPHORE BRONZE CONTACT TYPE: STAMPED CONTACT PLATING: UNDERPLATE 1.27 to 2.54 µm Ni CONTACT AREA 0.76 µm Gold SOLDER TAIL AREA 2.54 to 5.08 µm Matt Tin
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Original
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UL94-V0
2002/95/EC
30Vac
100Vac/min
01-APR-14
12-AUG-13
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PDF
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Untitled
Abstract: No abstract text available
Text: Si7112DN Vishay Siliconix N-Channel 30 V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.0075 at VGS = 10 V 17.8 0.0082 at VGS = 4.5 V 17.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Original
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Si7112DN
2002/95/EC
Si7112DN-T1-E3
Si7112DN-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . PHP KEY BENEFITS • High purity ceramic substrate • Power rating to 2.5 W • Resistance range: 10 W to 30 kW • Resistor tolerance to ± 0.1 % • TCR to ± 25 ppm/°C • Flame resistant UL 94 V-0 • Lead Pb -free and lead terminations available
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Original
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2002/95/EC
02-May-11
VMN-PT0250-1105
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PDF
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SC-89
Abstract: Si1024X
Text: Si1024X Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET: 1.8 V Rated
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Original
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Si1024X
2002/95/EC
OT-563
SC-89
11-Mar-11
SC-89
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PDF
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Untitled
Abstract: No abstract text available
Text: Si1553CDL Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY N-Channel P-Channel VDS (V) RDS(on) () ID (A)a 0.390 at VGS = 4.5 V 0.7 20 0.510 at VGS = 2.7 V 0.5 - 20 0.578 at VGS = 2.5 V 0.5 0.850 at VGS = - 4.5 V - 0.5 1.35 at VGS = - 2.7 V
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Original
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Si1553CDL
2002/95/EC
OT-363
SC-70
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: LCP FLAMABILITY RATING: UL94-V0 COLOR: BLUE CONTACT MATERIAL: PHOSPHORE BRONZE CONTACT TYPE: STAMPED CONTACT PLATING: UNDERPLATE 1.27 to 2.54 µm Ni CONTACT AREA 0.76 µm Gold SOLDER TAIL AREA 2.54 to 5.08 µm Matt Tin
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Original
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UL94-V0
2002/95/EC
30Vac
100Vac/min
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PDF
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Untitled
Abstract: No abstract text available
Text: 1 2 3 4 1.40±0.05 Ø 0.85±0.10 TYP. *Ø1.5±0.10 2.54 A±0.10 1.27±0.05 . 1.80 1.50 2.54 1.80 B±0.30 *Ø1.5±0.10 1.27±0.05 1.40±0.05 2.54±0.05 * 1 hole necessary to let IDC nose go through the hole PCB LAYOUT - COMPONENT VIEW 1.90 4.00 4.00 3.1 0.25
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Original
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UL94-V0
100VAC
02-MAY-11
12-MAY-10
07-APR-10
09-MAR-10
23-DEC-07
12-JUN-07
03-NOV-06
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PDF
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SQ4920EY Vishay Siliconix Dual N-Channel 30 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Original
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SQ4920EY
11-Mar-11
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PDF
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Si2338DS
Abstract: No abstract text available
Text: New Product Si2338DS Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A)a, e 0.028 at VGS = 10 V 6 0.033 at VGS = 4.5 V 6 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Original
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Si2338DS
2002/95/EC
OT-23
Si2338DS-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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SI7112DN-T1-E3
Abstract: No abstract text available
Text: Si7112DN Vishay Siliconix N-Channel 30 V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.0075 at VGS = 10 V 17.8 0.0082 at VGS = 4.5 V 17.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Original
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Si7112DN
2002/95/EC
Si7112DN-T1-E3
Si7112DN-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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si2324
Abstract: No abstract text available
Text: Si2324DS Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) () ID (A)a 0.234 at VGS = 10 V 2.3 0.267 at VGS = 6 V 2.1 0.278 at VGS = 4.5 V 1.7 VDS (V) 100 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Original
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Si2324DS
2002/95/EC
O-236
OT-23)
Si2324DS-T1-GE3
11-Mar-11
si2324
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PDF
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100 20L A1 diode
Abstract: diode L 0747
Text: SQD30N05-20L Vishay Siliconix Automotive N-Channel 55 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • Compliant to RoHS Directive 2002/95/EC
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Original
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SQD30N05-20L
AEC-Q101
2002/95/EC
O-252
O-252
SQD30N05-20L-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
100 20L A1 diode
diode L 0747
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PDF
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100 20L A1 diode
Abstract: diode L 0747 S11074
Text: SQD30N05-20L Vishay Siliconix Automotive N-Channel 55 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • Compliant to RoHS Directive 2002/95/EC
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Original
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SQD30N05-20L
AEC-Q101
2002/95/EC
O-252
O-252
SQD30N05-20L-GE3
11-Mar-11
100 20L A1 diode
diode L 0747
S11074
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PDF
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Untitled
Abstract: No abstract text available
Text: Si3424CDV Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A)a, b 0.026 at VGS = 10 V 8 0.032 at VGS = 4.5 V 8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested
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Original
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Si3424CDV
2002/95/EC
Si3424CDV-T1-GE3
11-Mar-11
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PDF
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Untitled
Abstract: No abstract text available
Text: SiA907EDJT Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.057 at VGS = - 4.5 V - 4.5a 0.095 at VGS = - 2.5 V - 4.5a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Original
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SiA907EDJT
SC-70
2002/95/EC
SC-70-6L-Dual
11-Mar-11
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product Si1443EDH Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.054 at VGS = - 10 V - 4a 0.062 at VGS = - 4.5 V - 4a 0.085 at VGS = - 2.5 V - 3.4 Qg (Typ.) 8.6 nC • Halogen-free According to IEC 61249-2-21
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Original
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Si1443EDH
2002/95/EC
SC-70
Si1443EDH-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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E28476
Abstract: 453973
Text: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 6 5 4 3 2 RELEASED FOR PUBLICATION By - REVISIONS LOC DIST AF 58 ALL RIGHTS RESERVED. LTR DESCRIPTION V2 1. FOR USE 2. WIRE 3. SEE D E T A IL PRINTED RANGE: MAX D IN 18-28 O U TS ID E DIA FURNISHED AS A CIRCUIT AWG
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OCR Scan
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02MAY11
02MAY2011
E28476
453973
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PDF
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