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    FQAF13N50

    Abstract: No abstract text available
    Text: QFET N-CHANNEL FQAF13N50 FEATURES BV dss = 500V Advanced New Design R ds ON = 0.43Î2 Avanced Rugged Technology lD = 9.6A Rugged Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge: 45nC (Typ.)


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    FQA13N50

    Abstract: ls134
    Text: QFET N-CHANNEL FQA13N50 FEATURES BV dss = 500V Advanced New Design R ds ON = 0.43Î2 Avanced Rugged Technology lD = 13.4A Rugged Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge: 45nC (Typ.)


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    BR-HD033-05V

    Abstract: BR-HD033-12V BR-HG033-05V BR-HUB33-05V BR-HUB33-09V BR-HY033-05V BR-HEI33-15V
    Text: S U R F A C E MOUNT R E S IS T O R CH IP L E D L A M P S 1206 R esister Built-in BR-Hxxx3-xx Series A b so lu te M axim um R atin g s T a = 2 5 'C UNIT SPEC. IF niA 12 IFp mA 100 Topr x; -25 >+80 Tstg V -20~*-85 NOTE: 1.All d im e n s io n s a r e in m illim e te r s ( in c h e s ) .


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    PDF BR-HG033-05V BR-HY033-05V BR-HD033-05V BR-HUB33-05V BR-HUB33-09V BR-HG03Ã BR-HY033-I2V BR-IIE033-I2V BR-HD033-12V BR-HEI33-15V