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Text: A PER ECO 13 001490 03JUN13 BL AC OBSOLETE A
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03JUN13
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Text: 4 THIS DRAWING IS UNPUBLISHED. C RELEASED FOR PUBLICATION BY AMP INCORPORATED. COPYRIGHT 19 2 3 ,19 . LOC P J POSITION DIM M REVISIONS DIST ALL RIGHTS RESERVED. H POSITION DESCRIPTION LTR B DATE PER ECO 13 001490 DWN APVD 03JUN13 5.08 MAX 2 PLC D D -Y- POSITION 1
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03JUN13
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Untitled
Abstract: No abstract text available
Text: A PER ECO 13 001490 03JUN13 BL AC OBSOLETE A
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03JUN13
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Text: VS-60.PF0.PbF Series, VS-60.PF0.-M3 Series www.vishay.com Vishay Semiconductors Fast Soft Recovery Rectifier Diode, 60 A FEATURES • 150 °C max. operating junction temperature • Low forward voltage drop and short reverse recovery time TO-247AC modified
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VS-60
O-247AC
JEDEC-JESD47
O-247AC
VS-60EPF.
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: SiP32472 www.vishay.com Vishay Siliconix 46 m, Slew Rate Controlled Load Switch in uDFN4 1.1 mm x 1.1 mm DESCRIPTION FEATURES The SiP32472 is a slew rate controlled integrated high side load switch that operates in the input voltage range from 1.2 V to 5.5 V.
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SiP32472
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SUD20P15-306 Vishay Siliconix P-Channel 150 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 150 RDS(on) () Max. ID (A) 0.306 at VGS = - 10 V - 8.1 0.312 at VGS = - 8 V -8 0.335 at VGS = - 6 V - 7.7 Qg (Typ.) 6.2 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested
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SUD20P15-306
O-252
SUD20P15-306-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SUU09N10-76P Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) () Max. ID (A) 0.076 at VGS = 10 V 9d 0.096 at VGS = 6 V 9d Qg (Typ.) 8.5 TO-251 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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SUU09N10-76P
O-251
2002/95/EC
SUU09N10-76P-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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SUD50P04-08
Abstract: No abstract text available
Text: SUD50P04-08 www.vishay.com Vishay Siliconix P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -40 RDS(on) () ID (A) 0.0081 at VGS = -10 V -50 d 0.0117 at VGS = -4.5 V -48 d Qg (TYP.) 60 • TrenchFET power MOSFET • 100 % Rg and UIS tested
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SUD50P04-08
O-252
SUD50P04-08-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
SUD50P04-08
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Abstract: No abstract text available
Text: IRLR014, IRLU014, SiHLR014, SiHLU014 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 60 RDS(on) () VGS = 5.0 V 0.20 Qg (Max.) (nC) 8.4 Qgs (nC) 3.5 Qgd (nC) 6.0 Configuration Single D DPAK (TO-252)
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IRLR014,
IRLU014,
SiHLR014
SiHLU014
O-252)
O-251)
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: SUD50N04-16P Vishay Siliconix N-Channel 40-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) ID (A)a, c 0.016 at VGS = 10 V 20 0.018 at VGS = 4.5 V 20 Qg (Typ.) • TrenchFET Power MOSFET • 100 % Rg and UIS Tested RoHS 15.6 nC COMPLIANT
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SUD50N04-16P
O-252
SUD50N04-16P-E3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: IRFR120, IRFU120, SiHFR120, SiHFU120 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 100 RDS(on) () VGS = 10 V 0.27 Qg (Max.) (nC) 16 Qgs (nC) 4.4 Qgd (nC) 7.7 Configuration Single DESCRIPTION
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IRFR120,
IRFU120,
SiHFR120
SiHFU120
O-252)
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: SUD45P03-09 Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.0087 at VGS = - 10 V - 45d 0.0150 at VGS = - 4.5 V - 32 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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SUD45P03-09
2002/95/EC
O-252
SUD45P03-09-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Abstract: No abstract text available
Text: SQJ848EP www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 40 RDS(on) () at VGS = 10 V 0.0075 RDS(on) () at VGS = 4.5 V 0.0120 ID (A) • AEC-Q101 Qualified • 100 % Rg and UIS Tested
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SQJ848EP
AEC-Q101
SQJ848EP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Abstract: No abstract text available
Text: SUD50N02-06P Vishay Siliconix N-Channel 20 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) a RDS(on) (Ω) 20 ID (A) 0.0060 at VGS = 10 V 26 0.0095 at VGS = 4.5 V 21 • • • • • TrenchFET Power MOSFET 175 °C Junction Temperature PWM Optimized for High Efficiency
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SUD50N02-06P
2002/95/EC
O-252
SUD50N02-06P-E3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: IRFR9014, IRFU9014, SiHFR9014, SiHFU9014 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 60 RDS(on) () VGS = - 10 V 0.50 Qg (Max.) (nC) 12 Qgs (nC) 3.8 Qgd (nC) 5.1 Configuration Single S DPAK
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IRFR9014,
IRFU9014,
SiHFR9014
SiHFU9014
O-252)
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Abstract: No abstract text available
Text: SUD25N15-52 Vishay Siliconix N-Channel 150-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 150 ID (A) 0.052 at VGS = 10 V 25 0.060 at VGS = 6 V 23 • • • • • TrenchFET Power MOSFET 175 °C Junction Temperature PWM Optimized
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SUD25N15-52
2002/95/EC
O-252
SUD25N15-52-E3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Abstract: No abstract text available
Text: IRFR9310, IRFU9310, SiHFR9310, SiHFU9310 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • - 400 RDS(on) () VGS = - 10 V 7.0 Qg (Max.) (nC) 13 Qgs (nC) 3.2 Qgd (nC) 5.0 Configuration Single S DPAK
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IRFR9310,
IRFU9310,
SiHFR9310
SiHFU9310
O-252)
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: IRFR024, IRFU024, SiHFR024, SiHFU024 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 60 RDS(on) () VGS = 10 V 0.10 Qg (Max.) (nC) 25 Qgs (nC) 5.8 Qgd (nC) 11 Configuration Single D DPAK (TO-252)
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IRFR024,
IRFU024,
SiHFR024
SiHFU024
O-252)
O-251)
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: IRFR020, IRFU020, SiHFR020, SiHFU020 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 60 RDS(on) () VGS = 10 V 0.10 Qg (Max.) (nC) 25 Qgs (nC) 5.8 Qgd (nC) 11 Configuration Single D DPAK (TO-252)
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IRFR020,
IRFU020,
SiHFR020
SiHFU020
O-252)
O-251)
2002/95/EC.
2002/95/EC
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Untitled
Abstract: No abstract text available
Text: SUD50N10-18P Vishay Siliconix N-Channel 100 V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (A) Qg (Typ.) 100 0.0185 at VGS = 10 V 50 48 nC a TO-252 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Material categorization:
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SUD50N10-18P
O-252
SUD50N10-18P-E3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SiHD6N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 700 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) • • • • • 0.6 48 Qgs (nC) 6 Qgd (nC) 11 Configuration
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SiHD6N65E
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Abstract: No abstract text available
Text: SiHD5N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness
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SiHD5N50D
O-252)
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: IRFR014, IRFU014, SiHFR014, SiHFU014 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 60 RDS(on) () VGS = 10 V 0.20 Qg (Max.) (nC) 11 Qgs (nC) 3.1 Qgd (nC) 5.8 Configuration Single D DPAK (TO-252)
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IRFR014,
IRFU014,
SiHFR014
SiHFU014
O-252)
O-251)
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: 0.156 THRU C’ BORE 0.300 X .875 REF. 2X .050 TYP. .168 'TYP. H B B 1.00 NOTES: -.070 TYP. .080.3 0 0 - -.8 0 0 - .125 -17 ° 1. 2. 3. 4. .0155. 6. .100 TYP. T O LERANC ES - UNLESS OTHERW ISE SPECIFIED XX = ±.01 [.254] X X X = ±.005 [.127] ANG . = ±5°
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P971944)
HS010155.
03JUN13
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