F15NM60N
Abstract: p15nm60n W15NM60N STB15NM60N STF15NM60N STI15NM60N STP15NM60N STW15NM60N F15N
Text: STB15NM60N - STF/I15NM60N STP15NM60N - STW15NM60N N-channel 600V - 0.270Ω - 14A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh Power MOSFET Features Type VDSS @Tjmax RDS(on) ID 3 3 12 1 STB15NM60N 650V < 0.299Ω 14A STI15NM60N 650V < 0.299Ω
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STB15NM60N
STF/I15NM60N
STP15NM60N
STW15NM60N
O-220/FP
O-247
STB15NM60N
STI15NM60N
STF15NM60N
STP15NM60N
F15NM60N
p15nm60n
W15NM60N
STF15NM60N
STI15NM60N
STW15NM60N
F15N
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STPS20
Abstract: No abstract text available
Text: STPS20120C Power Schottky rectifier Datasheet − production data Features • High junction temperature capability ■ Avalanche rated A1 ■ Low leakage current A2 ■ Good trade-off between leakage current and forward voltage drop K Description K Dual center tap Schottky rectifier suited for high
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STPS20120C
O-220AB,
O-220AB
O-220FPAB,
STPS20120CT
O-220FPAB
STPS20120CFP
STPS20
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p80nf06
Abstract: JESD97 STB80NF06 STB80NF06T4 STP80NF06 STW80NF06 P80NF
Text: STP80NF06 - STB80NF06 STW80NF06 N-channel 60V - 0.0065Ω - 80A TO-220/D2PAK/TO-247 STripFET II Power MOSFET Features Type VDSS RDS on ID STB80NF06 60V <0.008Ω 80A STP80NF06 60V <0.008Ω 80A 3 1 STW80NF06 60V • 100% avalanche tested ■ Low threshold drive
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STP80NF06
STB80NF06
STW80NF06
O-220/D2PAK/TO-247
STP80NF06
O-220
O-247
p80nf06
JESD97
STB80NF06
STB80NF06T4
STW80NF06
P80NF
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k137
Abstract: HM SOT23-5 st k136 JESD97 TS507 TS507ID TS507IDT HM SOT23-5 marking marking code ad 5.9* sot23-5
Text: TS507 High precision rail-to-rail operational amplifier Features • Ultra low offset voltage: 25 µV typ, 100 µV max ■ Rail-to-rail input/output voltage swing ■ Operating from 2.7 V to 5.5 V ■ High speed: 1.9 MHz ■ 45° phase margin with 100 pF ■
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TS507
OT23-5
OT23-5
k137
HM SOT23-5
st k136
JESD97
TS507
TS507ID
TS507IDT
HM SOT23-5 marking
marking code ad 5.9* sot23-5
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Untitled
Abstract: No abstract text available
Text: 7 8 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 2007 RELEASED FOR PUBLICATION 6 5 4 3 2 2007 LOC AD ALL RIGHTS RESERVED. BY - 1 REVISIONS DIST 00 P LTR F 1.9 REF 2.375 11.8 REF 6.00 0.1 DESCRIPTION DATE REVISED PER ECO-13-010626 DWN APVD KH 31JUL2013 RP 2.5 REF
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ECO-13-010626
31JUL2013
03MAY2007
27AUG2007
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st10 Bootstrap
Abstract: ST10F273E
Text: ST10F273M 16-bit MCU with 512 Kbyte Flash memory and 36 Kbyte RAM Datasheet − production data Features • High performance 16-bit CPU with DSP functions – 50ns instruction cycle time at 40 MHz max CPU clock – Multiply/accumulate unit MAC 16 x 16-bit
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ST10F273M
16-bit
40-bit
32-bit
st10 Bootstrap
ST10F273E
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10SP capacitor
Abstract: 13sp 10SP 010 15SP 010 LNBP SERIES LNBP12 13SP 010 LNBP20 10SP 010 capacitor 567 tone
Text: LNBP20 / LNBP1X series LNBP supply and control voltage regulator parallel interface Feature summary • Complete interface for two LNBs remote supply and control ■ LNB selection and stand-by function ■ Built-in tone oscillator factory trimmed at 22KHz
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LNBP20
22KHz
PowerSO-20
10SP capacitor
13sp
10SP 010
15SP 010
LNBP SERIES
LNBP12
13SP 010
10SP 010 capacitor
567 tone
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ST10F273M-4Q3
Abstract: diode T35 12H ST10F273 TQFP144 DIMENSION LQFP144 PQFP144 ST10 ST10F273E st10 Bootstrap ST10F273 reprogramming
Text: ST10F273M 16-bit MCU with 512 Kbyte Flash memory and 36 Kbyte RAM Features • High performance 16-bit CPU with DSP functions – 50ns instruction cycle time at 40 MHz max CPU clock – Multiply/accumulate unit MAC 16 x 16-bit multiplication, 40-bit accumulator
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ST10F273M
16-bit
16-bit
40-bit
PQFP144
LQFP144
24-channel
16-channel
10-bit,
ST10F273M-4Q3
diode T35 12H
ST10F273
TQFP144 DIMENSION
LQFP144
PQFP144
ST10
ST10F273E
st10 Bootstrap
ST10F273 reprogramming
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Untitled
Abstract: No abstract text available
Text: TS507 High precision rail-to-rail operational amplifier Datasheet - production data Applications Pin connections top view • Battery-powered applications • Portable devices Output 1 VDD 2 Non Inverting Input 3 5 VCC • Signal conditioning • Medical instrumentation
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TS507
OT23-5
TS507
DocID10958
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2DF30L
Abstract: 7200 b transistor STS2DNF30L marking 7200 so8
Text: STS2DNF30L Dual n-channel 30 V, 0.09 Ω, 3 A SO-8 STripFET Power MOSFET Features Type VDSS RDS on max ID STS2DNF30L 30V <0.11Ω 3A • Standard outline for easy automated surface mount assembly ■ Low threshold gate drive S0-8 Application ■ Switching applications
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STS2DNF30L
2DF30L
7200 b transistor
STS2DNF30L
marking 7200 so8
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Untitled
Abstract: No abstract text available
Text: STB15NM60N - STF/I15NM60N STP15NM60N - STW15NM60N N-channel 600V - 0.270Ω - 14A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh Power MOSFET Features VDSS @Tjmax Type RDS(on) ID 3 3 12 ) s ( ct 1 STB15NM60N 650V < 0.299Ω 14A STI15NM60N 650V
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STB15NM60N
STF/I15NM60N
STP15NM60N
STW15NM60N
O-220/FP
O-247
STI15NM60N
STF15NM60N
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ST10F27
Abstract: No abstract text available
Text: ST10F273M 16-bit MCU with 512 Kbyte Flash memory and 36 Kbyte RAM Datasheet − production data Features • ■ ■ ■ High performance 16-bit CPU with DSP functions – 50ns instruction cycle time at 40 MHz max CPU clock – Multiply/accumulate unit MAC 16 x 16-bit
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ST10F273M
16-bit
16-bit
40-bit
PQFP144
LQFP144
32-bit
ST10F27
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Untitled
Abstract: No abstract text available
Text: TS507 High precision rail-to-rail operational amplifier Features • Ultra low offset voltage: 25 µV typ, 100 µV max ■ Rail-to-rail input/output voltage swing ■ Operating from 2.7 V to 5.5 V ■ High speed: 1.9 MHz ■ 45° phase margin with 100 pF ■
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TS507
OT23-5
OT23-5
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Untitled
Abstract: No abstract text available
Text: STPS20120C Power Schottky rectifier Datasheet − production data Features • High junction temperature capability ■ Avalanche rated A1 ■ Low leakage current A2 ■ Good trade-off between leakage current and forward voltage drop K Description K Dual center tap Schottky rectifier suited for high
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STPS20120C
O-220AB,
O-220AB
O-220FPAB,
O-220FPAB
STPS20120CFP
O-220AB
STPS20120CT
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Untitled
Abstract: No abstract text available
Text: ST10F273M 16-bit MCU with 512 Kbyte Flash memory and 36 Kbyte RAM Datasheet − production data Features • High performance 16-bit CPU with DSP functions – 50ns instruction cycle time at 40 MHz max CPU clock – Multiply/accumulate unit MAC 16 x 16-bit
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ST10F273M
16-bit
16-bit
40-bit
PQFP144
LQFP144
24-channel
16-channel
10-bit,
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Untitled
Abstract: No abstract text available
Text: STP80NF06 - STB80NF06 STW80NF06 N-channel 60V - 0.0065Ω - 80A TO-220/D2PAK/TO-247 STripFET II Power MOSFET Features Type VDSS RDS on ID STB80NF06 60V <0.008Ω 80A STP80NF06 60V <0.008Ω 80A STW80NF06 60V • 100% avalanche tested ■ Low threshold drive
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STP80NF06
STB80NF06
STW80NF06
O-220/D2PAK/TO-247
STP80NF06
O-220
O-247
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159/Thermistor 15SP
Abstract: LNBP11SP-TR
Text: LNBP20 / LNBP1X series LNBP supply and control voltage regulator parallel interface Feature summary • Complete interface for two LNBs remote supply and control ■ LNB selection and stand-by function ■ Built-in tone oscillator factory trimmed at 22KHz
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LNBP20
22KHz
PowerSO-20
159/Thermistor 15SP
LNBP11SP-TR
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74VHC04
Abstract: 74VHC14 74VHC14MTR 74VHC14TTR JESD97 TSSOP14
Text: 74VHC14 HEX SCHMITT inverter Features • High speed: tPD = 5.5ns typ. at VCC = 5V ■ Low power dissipation: ICC = 2 µA (Max.) at TA = 25°C ■ Typical hysteresis: Vh = 1V at VCC = 4.5V ■ Power down protection on inputs ■ Symmetrical output impedance:
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74VHC14
SO-14
TSSOP14
74VHC14
74VHC04
74VHC14MTR
74VHC14TTR
JESD97
TSSOP14
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74VHC14
Abstract: 74VHC04 74VHCT14A 74VHCT14AMTR 74VHCT14ATTR JESD97 TSSOP14 tssop14 st automotive
Text: 74VHCT14A HEX SCHMITT inverter Features • High speed: tPD = 5.5ns typ. at VCC = 5V ■ Low power dissipation: ICC = 2 µA (Max.) at TA = 25°C ■ Typical hysteresis: Vh = 0.7V at VCC = 4.5V ■ Power down protection on inputs & outputs ■ Symmetrical output impedance:
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74VHCT14A
SO-14
TSSOP14
74VHC04
74VHC14
74VHCT14A
74VHCT14AMTR
74VHCT14ATTR
JESD97
TSSOP14
tssop14 st automotive
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Untitled
Abstract: No abstract text available
Text: 7 8 THIS DRAWING IS UNPUBLISHED. IT D COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 6 5 4 2 3 - LOC ALL RIGHTS RESERVED. REVISIONS DIST AD 00 P LTR 0 1 HOUSING MATERIAL: GLASS-FILLED, DESCRIPTION DATE DWN BC AS 03MAY2007 REV PER ECO—0 7 —001967
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03MAY2007
31MAR2000
05MAY05
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Untitled
Abstract: No abstract text available
Text: 7 8 THIS DRAWING IS UNPUBLISHED. IT U COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 6 5 4 3 2 - ALL RIGHTS RESERVED. LOC DIST AD 00 R E V IS IO N S P LTR 01 DESCRIPTION R EV PER DATE DWN 03MAY2007 E C O —0 7 —0 0 1 9 6 7 APVD BC AS
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03MAY2007
05MAY05
31MAR2000
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Untitled
Abstract: No abstract text available
Text: 7 8 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 6 5 4 3 2 - LOC REVISIONS DIST AD 00 ALL RIGHTS RESERVED. P LTR 0 1 DESCRIPTION DATE DWN BC AS 03MAY2007 REV PER ECO—0 7 —001967 APVD HOUSING MATERIAL: GLASS-FILLED POLYMER.
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03MAY2007
31MAR2000
05MAY05
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Untitled
Abstract: No abstract text available
Text: 7 8 THIS DRAWING IS UNPUBLISHED. IT U COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 6 5 4 2 3 - LOC ALL RIGHTS RESERVED. AD REVISIONS DIST 00 P LTR DESCRIPTION DATE HOUSING MATERIAL: GLASS-FILLED APVD BC AS 03MAY2007 REV PER ECO—0 7 —001967
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03MAY2007
31MAR2000
05MAY05
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wk 2 94v-0
Abstract: 1734449-1 cd 4540
Text: 4 3 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. L0C ALL RIGHTS RESERVED. REVISIONS DIST DW LTR DESCRIPTION A DATE DWN OH WK 04M AY07 ECR—0 7 —01 041 1, CHANGE TERMINAL’S PROFILE APVD D 0.89 49 .6 0 ± 0 .0 5
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04MAY07
03/zm
03MAY2007
31MAR2000
wk 2 94v-0
1734449-1
cd 4540
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