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    04N60C3 Search Results

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    04N60C3 Price and Stock

    Infineon Technologies AG SPD04N60C3ATMA1

    MOSFET N-CH 600V 4.5A TO252-3
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    DigiKey SPD04N60C3ATMA1 Cut Tape 2,494 1
    • 1 $2.51
    • 10 $1.614
    • 100 $2.51
    • 1000 $0.81873
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    SPD04N60C3ATMA1 Digi-Reel 2,494 1
    • 1 $2.51
    • 10 $1.614
    • 100 $2.51
    • 1000 $0.81873
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    Avnet Americas SPD04N60C3ATMA1 Reel 1
    • 1 $1.48
    • 10 $1.16
    • 100 $0.826
    • 1000 $0.648
    • 10000 $0.648
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    SPD04N60C3ATMA1 Reel 15 Weeks 2,500
    • 1 -
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    • 10000 $0.35865
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    Mouser Electronics SPD04N60C3ATMA1 4,204
    • 1 $1.78
    • 10 $1.4
    • 100 $0.993
    • 1000 $0.757
    • 10000 $0.728
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    Newark SPD04N60C3ATMA1 Bulk 2,028 1
    • 1 $1.48
    • 10 $1.16
    • 100 $0.826
    • 1000 $0.63
    • 10000 $0.621
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    EBV Elektronik SPD04N60C3ATMA1 16 Weeks 2,500
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    Win Source Electronics SPD04N60C3ATMA1 58,001
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    • 100 $0.921
    • 1000 $0.614
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    Rochester Electronics LLC SPP04N60C3XKSA1

    LOW POWER_LEGACY
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    DigiKey SPP04N60C3XKSA1 Bulk 302
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    Infineon Technologies AG SPP04N60C3XKSA1

    MOSFET N-CH 600V 4.5A TO220-3
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    DigiKey SPP04N60C3XKSA1 Tube
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    Newark SPP04N60C3XKSA1 Bulk 1
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    Bristol Electronics SPP04N60C3XKSA1 141
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    Rochester Electronics SPP04N60C3XKSA1 7,473 1
    • 1 $0.9563
    • 10 $0.9563
    • 100 $0.8989
    • 1000 $0.8129
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    Component Electronics, Inc SPP04N60C3XKSA1 32
    • 1 $5
    • 10 $5
    • 100 $3.75
    • 1000 $3.25
    • 10000 $3.25
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    Infineon Technologies AG SPS04N60C3BKMA1

    MOSFET N-CH 650V 4.5A TO251-3
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    DigiKey SPS04N60C3BKMA1 Tube
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    Rochester Electronics SPS04N60C3BKMA1 15,000 1
    • 1 $0.625
    • 10 $0.625
    • 100 $0.5875
    • 1000 $0.5313
    • 10000 $0.5313
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    Rochester Electronics LLC SPS04N60C3BKMA1

    MOSFET N-CH 650V 4.5A TO251-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SPS04N60C3BKMA1 Tube 462
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    • 1000 $0.65
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    04N60C3 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    04N60C3

    Abstract: 04N60C 04N60 SPU04N60C3 P-TO252 SDP06S60 SPD04N60C3
    Text: 04N60C3 04N60C3 Final data Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.95 Ω ID 4.5 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO251 P-TO252 • Extreme dv/dt rated • High peak current capability


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    SPD04N60C3 SPU04N60C3 P-TO251 P-TO252 Q67040-S4412 04N60C3 04N60C3 04N60C 04N60 SPU04N60C3 P-TO252 SDP06S60 SPD04N60C3 PDF

    TEA1713

    Abstract: 6NK60 04N60C3 equivalent bs170 replacement 04n60c3 04n60c3 replacement TEA1523 diode zd201 KD366 k3934
    Text: AN10881 TEA1713 resonant power supply control IC with PFC Rev. 01 — 22 March 2010 Application note Document information Info Content Keywords TEA1713, PFC, burst mode, adapter, LCD TV, Plasma TV, resonant, converter. Abstract The TEA1713 integrates a controller for Power Factor Correction PFC


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    AN10881 TEA1713 TEA1713, AN10881 6NK60 04N60C3 equivalent bs170 replacement 04n60c3 04n60c3 replacement TEA1523 diode zd201 KD366 k3934 PDF

    04n60c3

    Abstract: 04N60C3 equivalent SPA04N60C3 04N60C GPT09301 SDP06S60 AN-TO220-3-31-01
    Text: 04N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax 650 V RDS(on) 0.95 Ω


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    SPA04N60C3 P-TO220-3-31 P-TO220-3-31 Q67040-S4413 04N60C3 04n60c3 04N60C3 equivalent SPA04N60C3 04N60C GPT09301 SDP06S60 AN-TO220-3-31-01 PDF

    04n60c3

    Abstract: 04N60C3 equivalent SPP04N60C3 04N60C SDP06S60 SPB04N60C3
    Text: 04N60C3 04N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax 650 V RDS(on)


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    SPP04N60C3 SPB04N60C3 P-TO263-3-2 P-TO220-3-1 Q67040-S4366 04N60C3 04n60c3 04N60C3 equivalent SPP04N60C3 04N60C SDP06S60 SPB04N60C3 PDF

    04N60C3 equivalent

    Abstract: 04n60c3 04N60C 04n60 IT 239 P-TO252 SDP06S60 SPD04N60C3 SPU04N60C3
    Text: 04N60C3 04N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax 650 V RDS(on)


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    SPD04N60C3 SPU04N60C3 P-TO251 P-TO252 Q67040-S4412 04N60C3 04N60C3 equivalent 04n60c3 04N60C 04n60 IT 239 P-TO252 SDP06S60 SPD04N60C3 SPU04N60C3 PDF

    Untitled

    Abstract: No abstract text available
    Text: 04N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated RDS on 0.95 Ω • Extreme dv/dt rated


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    SPA04N60C3 P-TO220-3-31 04N60C3 P-TO220-3-31 Q67040-S4413 PDF

    04n60c3

    Abstract: 04N60C 04N60C3 equivalent 04N60 Q67040-S4407 SPA04N60C3 Q67040-S4366 SPB04N60C3 SPP04N60C3 SPB04N60C3 SMD
    Text: Final data 04N60C3, 04N60C3 04N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.95 Ω ID 4.5 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO263-3-2 P-TO220-3-1


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    SPP04N60C3, SPB04N60C3 SPA04N60C3 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: SPP04N60C3 04n60c3 04N60C 04N60C3 equivalent 04N60 Q67040-S4407 SPA04N60C3 Q67040-S4366 SPB04N60C3 SPP04N60C3 SPB04N60C3 SMD PDF

    04N60C3

    Abstract: smd transistor G18 04N60C3 equivalent 4V-20V 5304 marking code SPA04N60C3 SPB04N60C3 SPP04N60C3 04N60C
    Text: 04N60C3, 04N60C3 04N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.95 Ω ID 4.5 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 • Extreme dv/dt rated


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    SPP04N60C3, SPB04N60C3 SPA04N60C3 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: SPP04N60C3 04N60C3 smd transistor G18 04N60C3 equivalent 4V-20V 5304 marking code SPA04N60C3 SPB04N60C3 SPP04N60C3 04N60C PDF

    Untitled

    Abstract: No abstract text available
    Text: AN10881 TEA1713 resonant power supply control IC with PFC Rev. 2 — 26 September 2011 Application note Document information Info Content Keywords TEA1713, adapter, LCD TV, Plasma TV, resonant, converter, PFC, Burst mode Abstract The TEA1713 integrates a controller for Power Factor Correction PFC


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    AN10881 TEA1713 TEA1713, PDF

    TEA1613

    Abstract: TEA1713 04n60c3 LTV817B-S AN10907 TEA1623P ICE1PCS02 TEA1613T 04N60C3 equivalent mv silicon c320
    Text: AN10907 TEA1613T resonant power supply control IC Rev. 1 — 28 December 2010 Application note Document information Info Content Keywords TEA1613T, burst mode, adapter, LCD TV, plasma TV, resonant, converter. Abstract This application note discusses the TEA1613T application functions.


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    AN10907 TEA1613T TEA1613T, TEA1613 TEA1713 04n60c3 LTV817B-S AN10907 TEA1623P ICE1PCS02 04N60C3 equivalent mv silicon c320 PDF

    04n60c3

    Abstract: No abstract text available
    Text: Preliminary data 04N60C3, 04N60C3 04N60C3 Cool MOS =Power Transistor Feature •=New revolutionary high voltage technology Product Summary VDS @ Tjmax - V • Ultra low gate charge RDS on 0.95 Ω ID 4.5 A •=Periodic avalanche rated • Extreme dv/dt rated


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    SPP04N60C3, SPB04N60C3 SPA04N60C3 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 SPP04N60C3 Q67040-S4366 04n60c3 PDF

    04n60c3

    Abstract: 04N60C DSA0031699
    Text: 04N60C3 04N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated RDS on 0.95 Ω


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    SPP04N60C3 SPB04N60C3 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67040-S4366 Q67040-S4407 04n60c3 04N60C DSA0031699 PDF

    04n60c3

    Abstract: 04N60C3 equivalent Q67040-S4412 SPU04N60C3 FS - K - 1 - 0.95 - A - 40 04N60 P-TO252 SDP06S60 SPD04N60C3
    Text: 04N60C3 04N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.95 Ω ID 4.5 A • New revolutionary high voltage technology • Ultra low gate charge P-TO251 • Periodic avalanche rated P-TO252 • Extreme dv/dt rated • High peak current capability


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    SPD04N60C3 SPU04N60C3 P-TO251 P-TO252 Q67040-S4412 04N60C3 04n60c3 04N60C3 equivalent Q67040-S4412 SPU04N60C3 FS - K - 1 - 0.95 - A - 40 04N60 P-TO252 SDP06S60 SPD04N60C3 PDF

    04N60C

    Abstract: No abstract text available
    Text: 04N60C3 04N60C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V • Periodic avalanche rated RDS on 0.95 Ω • Extreme dv/dt rated ID 4.5 A • High peak current capability


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    SPD04N60C3 SPU04N60C3 P-TO251 P-TO252 P-TO252 Q67040-S4412 04N60C3 04N60C PDF

    04n60c3

    Abstract: No abstract text available
    Text: 04N60C3 04N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.95 Ω ID 4.5 A • New revolutionary high voltage technology • Ultra low gate charge PG-TO251 • Periodic avalanche rated PG-TO252 • Extreme dv/dt rated • High peak current capability


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    SPD04N60C3 SPU04N60C3 PG-TO251 PG-TO252 SPU04N60C3 PG-TO252 Q67040-S4412 04N60C3 PDF

    04n60c3

    Abstract: 04N60C3 equivalent smd transistor G18 04n60 04N60C SPB04N60C3 SPA04N60C3 SPP04N60C3 transistor C 331
    Text: 04N60C3, 04N60C3 04N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.95 Ω ID 4.5 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO263-3-2 P-TO220-3-1


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    SPP04N60C3, SPB04N60C3 SPA04N60C3 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: SPP04N60C3 04n60c3 04N60C3 equivalent smd transistor G18 04n60 04N60C SPB04N60C3 SPA04N60C3 SPP04N60C3 transistor C 331 PDF

    tea1716t

    Abstract: No abstract text available
    Text: AN11179 TEA1716 resonant power supply control IC with PFC Rev. 1 — 9 January 2013 Application note Document information Info Content Keywords TEA1716, Power Factor Corrector PFC , LLC, burst mode operation, resonant, power converter Abstract The TEA1716 integrates a power factor corrector controller and a


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    AN11179 TEA1716 TEA1716, tea1716t PDF

    LP2920

    Abstract: No abstract text available
    Text: AN11227 SSL4120 resonant power supply control IC with PFC Rev. 1 — 27 November 2012 Application note Document information Info Content Keywords SSL4120, converter, LED driver, lighting, resonant, converter, PFC, burst mode Abstract The SSL4120 integrates a controller for Power Factor Correction PFC


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    AN11227 SSL4120 SSL4120, LP2920 PDF

    04n60c3

    Abstract: 04N60C 04N60 04N60C3 equivalent SPB04N60C3 SPA04N60C3 SPP04N60C3
    Text: Preliminary data 04N60C3, 04N60C3 04N60C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge RDS on 0.95 Ω ID 4.5 A • Periodic avalanche rated • Extreme dv/dt rated


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    SPP04N60C3, SPB04N60C3 SPA04N60C3 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 SPP04N60C3 Q67040-S4366 04n60c3 04N60C 04N60 04N60C3 equivalent SPB04N60C3 SPA04N60C3 SPP04N60C3 PDF

    04N60C3

    Abstract: No abstract text available
    Text: Final data 04N60C3, 04N60C3 04N60C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge RDS on 0.95 Ω ID 4.5 A • Periodic avalanche rated • Extreme dv/dt rated


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    SPP04N60C3, SPB04N60C3 SPA04N60C3 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 SPP04N60C3 Q67040-S4366 04N60C3 PDF

    04n60c3

    Abstract: Q67040-S4366
    Text: 04N60C3, 04N60C3 04N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.95 Ω ID 4.5 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO263-3-2 P-TO220-3-1


    Original
    SPP04N60C3, SPB04N60C3 SPA04N60C3 P-TO220-3-31 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: SPP04N60C3 04n60c3 Q67040-S4366 PDF

    Untitled

    Abstract: No abstract text available
    Text: 04N60C3 04N60C3 Preliminary data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V • Periodic avalanche rated RDS on 0.95 Ω • Extreme dv/dt rated ID 4.5


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    SPD04N60C3 SPU04N60C3 P-TO251 P-TO252 P-TO252 Q67040-S4412 04N60C3 PDF

    PEF 24628

    Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
    Text: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by


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    B192-H6780-G10-X-7600 SP000012954 SP000013610 SP000017969 SP000014627 SP000018085 SP000018086 PEF 24628 PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819 PDF

    TDA 16822

    Abstract: 04N60C3 equivalent ICE1QS01 equivalent tda 3050 tda 1040 TDA 16846 TDA 16888 1QS01 07N60C3 mosfet transistor 04n60c3
    Text: ICs: SMPS, CoolSET TM TM – D i s c r e t e s : C o o l M O S , I G B T, t h i n Q ! Pow e r Ma n a g e m e n t & Su p p l y : : AC / D C Se l e c t i o n Gu i d e www.infineon.com/power Never stop thinking. TM Introduction TODAY’S MODERN LIFE style leads to a fast growing energy requirement as


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    B152-H8202-X-X-7600 TDA 16822 04N60C3 equivalent ICE1QS01 equivalent tda 3050 tda 1040 TDA 16846 TDA 16888 1QS01 07N60C3 mosfet transistor 04n60c3 PDF