2N5854
Abstract: No abstract text available
Text: 8440355 SPACE 89C~T 011TJ POWER'~£~LECTRONTCS~ D < 3 2 . M i DE|ALIMOBSS •ODDIID i | SPACE POWER ELECTRONICS Hi-Rel PLANAR P O W E R — 1 0 AMP PtSP f*^ .470 .500 MAX -*< NOTE 2 .050MAX. NOTE 2 .260 7340 L i .080 .076 .360 M I N . - .968 ~ .962 I , r .670
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Original
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011TJ
050MAX.
O-111
2N3789
2N3790
2N3791
2N3792
2N5003
2N5005
2N5007
2N5854
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PDF
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EIA "J" code marking
Abstract: 274 B010 500B18W473KV4E
Text: LOW INDUCTANCE CERAMIC MLCS These capacitors are specially designed with physical electrode and termination configurations that minimize their inductance and associated high frequency power loss due to ESL and ESR. FEATURES • Low ESL • High Resonance Frequency
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Original
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500B18W104KV4
050MAX
RS481
EIA "J" code marking
274 B010
500B18W473KV4E
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PDF
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2N1724
Abstract: 2N3624
Text: 8440355 SPACE POWER ELECTRONICS "'"""SPACE POWER ELECTRONICS 89C flT 00107 D 7 J 5 . E DF| 6440355 DDD01D7 Hi-Rel PLANAR P O W E R - 1 0 AMP WH TO-66 40W@T =100°C TO-5 5W@T =100°C o P TO-3 80W@T =100°C *A11 leads e l e c t r i c a l l y i s o l a t e d from case
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Original
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DDD01D7
2N1724
2N1725
2N2101
2N2811
2N2812
2N2813
2N2814
2N3445
2N3446
2N3624
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PDF
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TV SCHEMA
Abstract: AD201AH 50kD 100lK AD201A AD301A AD301AL 2kd 60
Text: r-. ANALOG W DEVICES GeneralPurposeLow Cost IC Operational Amplifier FEATURES Low Bias and Offset Current Single Capacitor External Compensation for Operating Flexibility Nullable Offset Voltage No Latch-Up Fully Short Circuit Protected Wide Operating Voltage Range
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AD201A,
AD301A
AD301AL
AD20lA,
AD30lA
AD30lAL
300pF
o30pF
TV SCHEMA
AD201AH
50kD
100lK
AD201A
2kd 60
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PDF
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to63
Abstract: No abstract text available
Text: B440355 SPACE SPACE POWER POWER ELECTRONICS 89C OQ1I2 Hi-Re! PLANAR P O W E R - 2 0 AMP Wk fll ELECTRONICS »E|S4H03SS D00D11E • | ~ FOR Breakdown Voltages TYPE ' 2N1936 2N1937 2N2815 2N2816 2N2817 2N2818 2N2819 2N2820 2N2821 2N2822 2N2823 2N2824 2N2825
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Original
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B440355
S4H03SS
D00D11E
SPHV405
SPHV406
SPHV407
SPHV408
SPHV409
SPHV420
SPHV421
to63
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PDF
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T100C
Abstract: No abstract text available
Text: 8440355 SPACE POWER 89C ELECTRONICS ST SPACE POWER ELECTRONICS 00101 DE| A4403SS Hi-Rel PLANAR POWER 5 ARSP NPN TO-5 4W@T =100°C DDDD101 b f~ TO-66 30W@T, :100°C C Breakdown Voltages TYPE CASE V 12N2150 2N2151 2N2657 2N2658 2N2850-1 2N2851-1 2N2852-1 2N2853-1
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Original
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A4403SS
DDDD101
12N2150
2N2151
2N2657
2N2658
2N2850-1
2N2851-1
2N2852-1
2N2853-1
T100C
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PDF
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Untitled
Abstract: No abstract text available
Text: I SPACE POWER ELECTRONICS ST DE~| A4403SS ••00106 1 | ^ * 3 3 - 0 / _ Hi-Rel PLANAR P O K E R - 1 0 AMP NPN FOR DETAILED SPECIFICATIONS CONTACT ENGINEERING Breakdown Voltages TYPE CASE V 2N4897 2N5002 2N5004 2N5006 2N5008 2N5048 2N5049 2N5148 2N5150 2N5152
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Original
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A4403SS
2N4897
2N5002
2N5004
2N5006
2N5008
2N5048
2N5049
2N5148
2N5150
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PDF
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Untitled
Abstract: No abstract text available
Text: ICE23 L M020 2 Megabit Mask ROM General Description The ICE23M020/ICE23LM020 is a high speed 2M bits CMOS mask ROM, with 256K X 8 bit data structure. Feature 1. 2. 3. 4. 5. 6. 7. 8. 90nS access time 256K x 8 bits 3.3V / 5V operating option CMOS / TTL I/O option
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Original
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ICE23
ICE23M020/ICE23LM020
32-Pin
44max.
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PDF
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Untitled
Abstract: No abstract text available
Text: SPACE POWER ST ELECTRONICS ]>E|fl4M03SS 0DDD105 fl | 7 3 3-« / s Hi-Rel PLANAR POWER - 5 AMP NPN TO-3 60W@T =100°C 30W@T =100°C r C C Breakdown Voltages TYPE 2N3850 2N3851 2N3852 2N3853 2N3878 2N3879 2N3928 2N3929 2N3996 2N3997 2N3998 2N3999 2N4231 2N4232
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Original
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fl4M03SS
0DDD105
2N3850
2N3851
2N3852
2N3853
2N3878
2N3879
2N3928
2N3929
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PDF
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SPHV402
Abstract: TO36 TO114
Text: 8440355 SPACE SPACE POWER POWER E L E C T R O N I C S 89C ELECTRONICS "flT 00115 D T-3 3-0/ DE~|fl44Q3SS •••••US t Ni-Rel PLANAR POWER 60 AMP P B A S E T O E M I T T E R S A T U R A T I O N V O L T A G E 3.5 S w 2 . 0 UI CD > 1 . 5 ." 1 TA-" - 5 5
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Original
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fl44Q3SS
166WOT
O-114
SPHV405
SPHV406
SPHV407
SPHV408
SPHV409
SPHV420
SPHV421
SPHV402
TO36
TO114
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PDF
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2N3666
Abstract: No abstract text available
Text: 8440355 SPACE POWER SPACE POWER 89C ELECTRONICS 00098 D J^JS~0 DE | 5440355 ODOOOIA 0 Hi-Rel PLANAR P O W E R — 2 AMP NPN ELECTRONICS FOR D E T A I L E D S P E C I F I C A T I O N S C O N T A C T ENGINEERING MOTES I (Three Leads (Dim. .011 mln. and .019 aax.) applies between (.050
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Original
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SPHV405
SPHV406
SPHV407
SPHV408
SPHV409
SPHV420
SPHV421
SPHV422
SPHV423
SPHV424
2N3666
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PDF
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2N5384
Abstract: No abstract text available
Text: 8440355 SPACE POWER 89C ELECTRONICS SPACE POWER ELECTRONICS "fll 00105 D T- 3 3 -o/ DlF|fl44[ 3SS QDDD10S 3 Hi-Rel PLANAR POWER 5 W PUP FOR DETAILED S P E C I F I C A T I O N S C O N T A C T E N G I N E E R I N G Breakdown Voltages TYPE CASE V 2N3202 2N3203
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Original
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QDDD10S
2N3202
2N3203
2N3204
2N3719
2N3720
2N3775
2N3776
2N3777
2N3778
2N5384
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PDF
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Untitled
Abstract: No abstract text available
Text: ICE23 L M010 1 Megabit Mask ROM General Description The ICE23M010/ICE23LM010 is a high-speed 1M bits CMOS mask ROM , with 128K X 8 bit data structure. Features 1. 2. 3. 4. 5. 6. 7. 8. 70ns access time 128K x 8 bits 3.3V / 5V operating option CMOS / TTL I/O option
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Original
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ICE23
ICE23M010/ICE23LM010
32-Pin
44max.
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PDF
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SPHV402
Abstract: 2N3853
Text: SPACE POWER ST ELECTRONICS ]>E|fl4M03SS 0DDD105 fl | 7 3 3-« / s Hi-Rel PLANAR POWER - 5 AMP NPN TO-3 60W@T =100°C 30W@T =100°C r C C Breakdown Voltages TYPE 2N3850 2N3851 2N3852 2N3853 2N3878 2N3879 2N3928 2N3929 2N3996 2N3997 2N3998 2N3999 2N4231 2N4232
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Original
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fl4M03SS
0DDD105
2N3850
2N3851
2N3852
2N3853
2N3878
2N3879
2N3928
2N3929
SPHV402
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PDF
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2N5287
Abstract: No abstract text available
Text: 8440355 SPACE POWER 89C ELECTRONICS SPACE POWER ELECTRONICS "fll 00105 D T- 3 3 -o/ DlF|fl44[ 3SS QDDD10S 3 Hi-Rel PLANAR POWER 5 W PUP FOR DETAILED S P E C I F I C A T I O N S C O N T A C T E N G I N E E R I N G Breakdown Voltages TYPE CASE V 2N3202 2N3203
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Original
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QDDD10S
2N3202
2N3203
2N3204
2N3719
2N3720
2N3775
2N3776
2N3777
2N3778
2N5287
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PDF
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SPP2144
Abstract: No abstract text available
Text: 8440355 SPACE SPACE POWER 89C POWER E L E C T R O N I C S ELECTRONICS ~fl^ 00114 D DE~|fl4403S5 0000114 4 |~~ Hi-Rel PLANAR P O W E R - 6 0 AMP NPN T A T A - ~5 5 C O L L E C T O R T A = 150C 1 0 1c C U R R E N T . I Q I A M P S IOC 10 C U R R E N T C T A '
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Original
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fl4403S5
O-114
200WOT
SPP2146
SPP2147
SPP2148
SPP2149
SPP2150
SPP2151
SPP2144
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PDF
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Untitled
Abstract: No abstract text available
Text: ro-n SENSITIVE ANO NONSENSITIVE GATE SCR DEVICE NUMBERS SENSITIVE MAXIMUM RATINGS SYMBOL V Repetitive Peak Off-State Voltage and Repetitive Peak Reverse Voltage and T j = 110" C V DRM & 50 100 200 400 600 RMS On-State Current at T q = 80°C and Conduction Angle of 180°
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OCR Scan
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HS04S
HS14S
HS24S
HS44S
HS64S
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PDF
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2N7805
Abstract: gw 340 diode t03 package transistor pin configuration 32N03 DTG2400 DTG-2400 2N2144A 2N1100 2N126 2n228 transistor
Text: CY7C1339 128K x 32 Synchronous-Pipelined Cache RAM Features The CY7C1339 I/O pins can operate at either the 2.5V or the 3.3V level; the I/O pins are 3.3V tolerant when V DDq=2.5V. * Supports 100-MHz bus fo r Pentium and PowerPC operations w ith zero w ait states
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OCR Scan
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CY7C1339
100-MHz
166-MHz
133-MHz
CY7C1339
Y220a/
T0220AA
T0220AB
TMW515TDB
2N7805
gw 340 diode
t03 package transistor pin configuration
32N03
DTG2400
DTG-2400
2N2144A
2N1100
2N126
2n228 transistor
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PDF
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JIS B 7512
Abstract: NOP998 taiyo yuden date code Taiyo 93-R information Taiyo 93 T
Text: 06/18/98 10:17 FAI 847 925 08flfl TAIYO YÜDEN CHICAGO @002 PRIORITY No. T9 5 7 F 2 1 SPECIFICATION HIGH-FREQUENCY CHIP INDUCTOR MULTI-LAYER IIK2125 TYPE SERIES TAIYO YUDEN CO. LTD. DATE: 27. Aug. 1997 I TAIYS00004 06/18/98 10 :17 FAX 847 925 0899 TAIYO YUDEN CHICAGO
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OCR Scan
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08flf
IIK2125
TAIYS00004
JIS B 7512
NOP998
taiyo yuden date code
Taiyo 93-R information
Taiyo 93 T
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PDF
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87S3D
Abstract: HK-1-G
Text: 06/18/98 10:20 FAI 847 925 0899 TAIYO YUDEN CHICAGO 0019 No. T957F06 SPEC I F I CAT I O N I HIGfl-FKEQUENCY MULTI-LATTER CHIP INDUCTOR HK1608 TYPE SERIES TAIYO YUDEN CQ.LTDDATE: 21. Apr. 1997 T A IY S00003 06/18/98 10:20 FAX 847 925 0899 TAIYO YUDEN CHICAGO
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OCR Scan
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T957F06
HK1608
S00003
HK1608
87S3D
HK-1-G
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PDF
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diode t85
Abstract: 2N7805 trf 510 transistor 2N2152 transistor 45 f 122 32N03 t85 diode 2N1073 TRF 840 2N2144A
Text: PNP HIGH POWER TRANSISTORS 7 | OODOOIS I>e | 2844352 27 co C D C D C D C O C D C O C D C O C O C D C D C O C O C O C O ''a C O C O C O C O C O C O C O C O C O C O C O C D C D C O C O C D C O C O C D C O O OOOOOOOOOOOOOOOOOOOOÇM I— I— I—I— I— I— i— I— I— I— I— I— 1— 1— 1— I— I— f- I— 1— >“
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OCR Scan
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2N58A
2N629
2N2144A
/2N2612
2N5436
2N143/13
2N630
2N2145A
2N2833
2N174A
diode t85
2N7805
trf 510 transistor
2N2152
transistor 45 f 122
32N03
t85 diode
2N1073
TRF 840
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PDF
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