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    STMicroelectronics BAS70-06FILM

    DIODE ARR SCHOTT 70V 70MA SOT233
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    DigiKey BAS70-06FILM Digi-Reel 14,145 1
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    BAS70-06FILM Cut Tape 14,145 1
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    BAS70-06FILM Reel 6,000 3,000
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    Mouser Electronics BAS70-06FILM 9,811
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    Newark BAS70-06FILM Cut Tape 5
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    BAS70-06FILM Reel 3,000
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    TME BAS70-06FILM 2,205 1
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    Avnet Silica BAS70-06FILM 45,000 143 Weeks 33,000
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    Panduit Corp DPF18-206FIB-3K

    CONN QC RCPT 18-22AWG 0.187
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    DigiKey DPF18-206FIB-3K Cut Tape 9,591 1
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    DPF18-206FIB-3K Reel 6,000 3,000
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    Avnet Americas DPF18-206FIB-3K Reel 8 Weeks 3,000
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    Mouser Electronics DPF18-206FIB-3K 2,808
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    Interstate Connecting Components DPF18-206FIB-3K 900
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    Panduit Corp DNF18-206FIB-M

    CONN QC RCPT 18-22AWG 0.187
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    DigiKey DNF18-206FIB-M Bulk 4,968 1
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    Mouser Electronics DNF18-206FIB-M 8,057
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    RS DNF18-206FIB-M Bulk 1
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    Interstate Connecting Components DNF18-206FIB-M 1,325
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    Panduit Corp DNF18-206FIB-3K

    CONN QC RCPT 18-22AWG 0.187
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    DigiKey DNF18-206FIB-3K Cut Tape 3,384 1
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    DNF18-206FIB-3K Reel 3,000 3,000
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    Avnet Americas DNF18-206FIB-3K Reel 8 Weeks 3,000
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    Mouser Electronics DNF18-206FIB-3K 7,785
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    Newark DNF18-206FIB-3K Reel 3,000
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    DNF18-206FIB-3K Cut Tape 3,000
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    RS DNF18-206FIB-3K Bulk 1,670 3 Weeks 1
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    Interstate Connecting Components DNF18-206FIB-3K 46,350
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    TestEquity LLC DNF18-206FIB-3K 2
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    Infineon Technologies AG 2ED020I06FIXUMA1

    IC GATE DRVR HALF-BRIDGE DSO18-2
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    DigiKey 2ED020I06FIXUMA1 Cut Tape 900 1
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    2ED020I06FIXUMA1 Digi-Reel 900 1
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    Avnet Americas 2ED020I06FIXUMA1 Reel 12 Weeks 1,000
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    Mouser Electronics 2ED020I06FIXUMA1 1,010
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    06FI Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Product catalogue | PCB connection systems | PCB plug-in connectors | Pitch 7.62 mm 0.300 inch - SV/BV | Male connectors, clamping yoke connection, pitch 7.62 | SVZ 7.62HP 180 | SVZ 7.62HP 180FI SN General ordering data Order No. Part designation Version


    Original
    180FI 62HP/12FI PDF

    Untitled

    Abstract: No abstract text available
    Text: Product catalogue | PCB connection systems | PCB plug-in connectors | Pitch 7.62 mm 0.300 inch - SV/BV | Male connectors, clamping yoke connection, pitch 7.62 | SVZ 7.62HP 180 | SVZ 7.62HP 180FI SN General ordering data Order No. Part designation Version


    Original
    180FI 62HP/12FI PDF

    Untitled

    Abstract: No abstract text available
    Text: Product catalogue | PCB connection systems | PCB plug-in connectors | Pitch 7.62 mm 0.300 inch - SV/BV | Male connectors, clamping yoke connection, pitch 7.62 | SVZ 7.62HP 180 | SVZ 7.62HP 180FI SN General ordering data Order No. Part designation Version


    Original
    180FI 62HP/12FI PDF

    Untitled

    Abstract: No abstract text available
    Text: Product catalogue | PCB connection systems | PCB plug-in connectors | Pitch 7.62 mm 0.300 inch - SV/BV | Male connectors, clamping yoke connection, pitch 7.62 | SVZ 7.62HP 180 | SVZ 7.62HP 180FI SN General ordering data Order No. Part designation Version


    Original
    180FI 62HP/12FI PDF

    DD 127 D TRANSISTOR

    Abstract: JIS B 0409
    Text: *57 TYPE STP30N06 06FI • • . ■ ■ . ■ ■ SGS-THOMSON s t p 3 on o6 ilLiCTIIMDe STP30N 06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V dss R DS on Id 60 V 60 V < 0 .0 5 a < 0 .0 5 a 30 A 19 A T Y P IC A L RDS(on) = 0.045 Q A V A LA N C H E R U G G ED T E C H N O LO G Y


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    STP30N STP30N06 STP30N06FI DD 127 D TRANSISTOR JIS B 0409 PDF

    stp60n06

    Abstract: No abstract text available
    Text: SGS-THOMSON £ j ï ULKgraMOeS STP60N06 06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E S TP60N 06 STP60N 06FI V dss RDS on Id 60 V 60 V < 0.0 2 Q. < 0.0 2 Q. 60 A 32 A . Q . . TYPICAL RDs(on) = 0.017 AVALANCHE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED


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    STP60N06 STP60N06FI TP60N STP60N PDF

    Untitled

    Abstract: No abstract text available
    Text: *57 SGS-THOMSON s tp 2 5 n o6 ilLiCTIIMDe STP25N 06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP25N 06 S TP25N 06FI • • . ■ ■ . ■ ■ V dss R DS on Id 60 V 60 V < 0.065 a < 0.065 a 25 A 16 A T Y P IC A L RDS(on) = 0.048 Q A V A LA N C H E R U G G ED T E C H N O LO G Y


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    STP25N TP25N PDF

    TP20N

    Abstract: No abstract text available
    Text: *57 SGS-THOMSON s t p 2 on o6 ilLiCTIKMDe STP20N 06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP20N 06 S TP20N 06FI • • . ■ ■ . ■ ■ V dss R DS on Id 60 V 60 V < 0.085 a < 0.085 a 20 A 13 A T Y P IC A L RDS(on) = 0.06 Q A V A LA N C H E R U G G ED T E C H N O LO G Y


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    STP20N TP20N PDF

    STP55N06

    Abstract: BS103 TRANSISTOR BH RW r5541
    Text: STP55N06 06FI SGS-THOMSON * t iLiCcM [MO gS J N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V S TP55N 06 S TP 55N 06FI . . . . . . . . . dss 60 V 60 V R D S (o n Id 0 .0 2 3 £2 0 .0 2 3 « 55 A 30 A AVALANC HE RUG G EDN ESS TECHNO LO GY


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    STP55N06 STP55N06FI TP55N O-220 ATT220 STP55N06/FI BS103 TRANSISTOR BH RW r5541 PDF

    Untitled

    Abstract: No abstract text available
    Text: w SGS-THOMSON TYPE STP50N 06 STP50N 06FI . . . . . . m N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V d ss RDS on Id 60 V 0 .0 2 8 U 0 .0 2 8 « 50 A 27 A 60 V AVALANC HE RUG G EDN ESS TECHNO LO G Y 100% AVALANC HE TESTED REPETITIVE AVALANCHE DATA AT 100°C


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    STP50N STP50N06 STP50N06FI O-220 ATT220 STP50N06/FI PDF

    20N06

    Abstract: No abstract text available
    Text: SGS-THOMSON STP20N06 06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STP20N 06 STP20N 06FI V dss R DS on Id 60 V 60 V 0 .0 9 £2 0 .0 9 £2 20 A 13 A . AVALANCHE RUGGEDNESS TECHNOLOGY . 100% AVALANCHE TESTED . REPETITIVE AVALANCHE DATA AT 100°C


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    STP20N06 STP20N06FI STP20N O-220 ISOWATT220 STP20N06/FI GC20180 20N06 PDF

    10N06

    Abstract: D10N06 diode gc6
    Text: S G S -T H O M Î 7 S O N V N D 1 0 N 0 6 /V N D 1 0 N 0 6 -1 ilL Ifê T O O T O iS S V N P 1 0 N 0 6 F I / K 1 0 N 0 6 F M ’’OMNIFET’: FULLY AUTOPROTECTED POWER MOSFET TY P E VN D 10N06 VND10N06-1 VN P 10N 06FI VNK 10N06FM . . . • . . . . . Vclamp


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    10N06 VND10N06-1 10N06FM VND10N06, VND10N06-1, VNP10N06FI VNK10N06FM D10N06 diode gc6 PDF

    OT 306

    Abstract: No abstract text available
    Text: *57 SGS-THOMSON s t p 3 6 n o6 STP36N 06FI ilLiCTIIMDe N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP36N06 06FI • • . ■ ■ . ■ ■ V dss R DS on Id 60 V 60 V < 0 .0 4 a < 0 .0 4 a 36 A 21 A T Y P IC A L RDS(on) = 0.03 Q A V A LA N C H E R U G G ED T E C H N O LO G Y


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    STP36N STP36N06 STP36N06FI OT 306 PDF

    7WE37

    Abstract: L0250 STP40N06 STP40N06FI V1068
    Text: 7TETE37 QQ4hM7b Q7*\ » S f i T H STP40N06 06FI ¡ ñ l SGS-THOMSON ilLiOT «! N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V STP40N06 STP40N 06FI R oS o n Id < 0.035 n < 0.035 n 40 A 23 A dss 60 V 60 V . Q . TYPICAL RDS(on) = 0.03 AVALANCHE RUGGED TECHNOLOGY


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    STP40N06 STP40N06FI STP40N06 STP40N06FI Rg-50 60VDS 7SE1237 004b4Ã STP40N06/FI 7WE37 L0250 V1068 PDF

    TP50N06V

    Abstract: No abstract text available
    Text: SGS-THOMSON ï ULKgraMOeS £j STP50N06 06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E S TP50N 06 STP50N 06FI . . . . . . . . V dss RDS on Id 60 V 60 V < 0.0 2 8 Q. < 0.0 2 8 Q. 50 A 27 A TYPICAL R DS(on) = 0.022 Q. AVALANCHE RUGGED TECHNOLOGY


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    TP50N STP50N STP50N06 STP50N06FI TP50N06V PDF

    TDA0161 equivalent

    Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
    Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:


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    PDF

    TTK SG 2368

    Abstract: BV EI 303 3628 7 segment LD 1106 BS LM 6863 D I8253 yx 8018 0308 082c ez 422 BV EI 304 3083 0429 01 2701 00 RELE 12,8 mhz e 4895 lf
    Text: AP-55A APPLICATION NOTE i n t e i A u g u s t 1979 S.A. Distributor E l e c t r o n ic \ \ B u il d in g E l e m e n t s p t y l t d PURVEYORS OF a l l ELECTRONIC COMWNENTS Tel eph on e 7 8 - 9 2 2 1 / 6 P O B o x 4 6 0 9 , Pretoria T e l e x 3 01 8 1 S A


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    AP-55A PR00UCT. MCS-48 /TP-11/1179/5K TTK SG 2368 BV EI 303 3628 7 segment LD 1106 BS LM 6863 D I8253 yx 8018 0308 082c ez 422 BV EI 304 3083 0429 01 2701 00 RELE 12,8 mhz e 4895 lf PDF

    TSD45N50V

    Abstract: TSD200N05V TSD40N55V TSD180N10V IRF540 TSD135N10V TSD150N10V TSD4M450V TSD17N100 TSD160N05V
    Text: SELECTION GUIDE BY - PART NUMBER Type V BR DSS (V) ^DS(on) ^ Id max (A) (H) Package iD(max) (A) Ptot (W) Qfs min (S) Ciss max (pF) 850 2000 BUZ10 50 0.080 13.00 TO-220 20.0 85 6.00 BUZ11 BUZ11A BUZ11FI BUZ21 50 0.040 0.055 0.040 0.100 18.00 15.00 18.00 9.00


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    O-220 TSD45N50V TSD200N05V TSD40N55V TSD180N10V IRF540 TSD135N10V TSD150N10V TSD4M450V TSD17N100 TSD160N05V PDF

    Untitled

    Abstract: No abstract text available
    Text: ¿57 S G S -T H O M S O N ¡m e ra « S T P 20 N06 s t p 2 0 N 0 6 FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E STP20N06 S 06FI V dss RDS on Id 60 V 60 V < 0 .085 Q. < 0 .085 Q. 20 A 13 A • TYPICAL RDS(on) = 0.06 Q . . AVALANCHE RUGGED TECHNOLOGY


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    STP20N06 TP20N06FI STP20N06/FI ISQWATT220 PDF

    transistor tc 144

    Abstract: No abstract text available
    Text: ¿57 TYP E STP36N06 S 06FI S G S -T H O M S O N ¡U È T O « S T P 36 N06 S T P 3 6 N 0 6 FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V dss RDS on Id 60 V 60 V < 0.04 a < 0.04 a 36 A 21 A • TYPICAL RDS(on) = 0.03 Q . . AVALANCHE RUGGED TECHNOLOGY


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    STP36N06 TP36N06FI STP36N06/FI ISQWATT220 transistor tc 144 PDF

    STH75N06

    Abstract: STW75N06
    Text: ¿57 TYP E S G S -T H O M S O N ¡U È T O « N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V STH75N06 06FI STH75N06 S T H 7 5 N 0 6 /F I S T W 7 5 N 06 dss 60 V 60 V 60 V R DS on Id < 0.014 a < 0.014 a < 0 .014 Q. 75 A 48 A 75 A . TYPICAL R DS(on) = 0.011 Q


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    STH75N06 STH75N06FI STH75N06 STH75N06/FI STW75N06 ISOWATT218 STW75N06 PDF

    Untitled

    Abstract: No abstract text available
    Text: ¿57 SGS-THOMSON ¡m era « STP30N06 06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E STP30N06 S 06FI V dss RDS on Id 60 V 60 V < 0.05 Q. < 0.05 Q. 30 A 19 A . TYPICAL RDs(on) = 0.045 Q . AVALANCHE RUGGED TECHNOLOGY • 100% AVALANCHE TESTED


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    STP30N06 STP30N06FI TP30N06FI STP30N06/FI ISQWATT220 PDF

    Untitled

    Abstract: No abstract text available
    Text: * 5 S T P 1 9 N06 S T P 1 9 N 0 6 FI S G S -T H O M S O N ULKgraMOeS 7 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E V STP19N06 S 06FI dss R D S o n Id 60 V 60 V < 0.1 a < 0.1 a 19 A 13 A • TYPICAL RDS(on) = 0.085 Q . AVALANCHE RUGGED TECHNOLOGY


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    STP19N06 TP19N06FI O-220 ISOWATT220 PDF

    Untitled

    Abstract: No abstract text available
    Text: ¿57 S G S -T H O M S O N ¡m e ra « S T P 25 N06 S T P 2 5 N 0 6 FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E V STP25N06 S 06FI dss 60 V 60 V R DS on Id < 0.065 Q. < 0.065 Q. 25 A 16 A . TYPICAL RDs(on) = 0.048 Q . AVALANCHE RUGGED TECHNOLOGY


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    STP25N06 TP25N06FI STP25N06/FI ISQWATT220 PDF