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    079N10NS Price and Stock

    Infineon Technologies AG BSC079N10NSGATMA1

    MOSFET N-CH 100V 13.4A 8TDSON
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    DigiKey BSC079N10NSGATMA1 Digi-Reel 4,701 1
    • 1 $3.5
    • 10 $2.286
    • 100 $3.5
    • 1000 $1.20819
    • 10000 $1.17663
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    BSC079N10NSGATMA1 Cut Tape 4,701 1
    • 1 $3.5
    • 10 $2.286
    • 100 $3.5
    • 1000 $1.20819
    • 10000 $1.17663
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    BSC079N10NSGATMA1 Reel 5,000
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    Rochester Electronics BSC079N10NSGATMA1 1
    • 1 $1.31
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    • 100 $1.23
    • 1000 $1.11
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    EBV Elektronik BSC079N10NSGATMA1 17 Weeks 5,000
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    Infineon Technologies AG BSC079N10NSGXT

    Trans MOSFET N-CH 100V 13.4A 8-Pin TDSON EP - Tape and Reel (Alt: BSC079N10NSGATMA1)
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    Avnet Americas BSC079N10NSGXT Reel 16 Weeks 5,000
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    Infineon Technologies AG BSC079N10NS G

    MOSFETs N-Ch 100V 100A TDSON-8 OptiMOS 2
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    Mouser Electronics BSC079N10NS G 5,105
    • 1 $2.8
    • 10 $2
    • 100 $1.45
    • 1000 $1.18
    • 10000 $1.14
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    Infineon Technologies AG BSC079N10NSG

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    Bristol Electronics BSC079N10NSG 40
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    079N10NS Datasheets Context Search

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    079N10NS

    Abstract: BSC079N10NS IEC61249-2-21 JESD22
    Text: 079N10NS G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, Normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 7.9 mΩ ID 100 A • Very low on-resistance R DS(on) PG-TDSON-8 • 150 °C operating temperature


    Original
    PDF BSC079N10NS IEC61249-2-21 079N10NS 079N10NS IEC61249-2-21 JESD22

    079N10NS

    Abstract: BSC079N10
    Text: 079N10NS G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 7.9 mΩ ID 100 A • Very low on-resistance R DS(on) • 150 °C operating temperature


    Original
    PDF BSC079N10NS 079N10NS 079N10NS BSC079N10

    079N10NS

    Abstract: No abstract text available
    Text: 079N10NS G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 7.9 mΩ ID 100 A • Very low on-resistance R DS(on) • 150 °C operating temperature


    Original
    PDF BSC079N10NS 079N10NS 079N10NS

    nc 80

    Abstract: BSC079N10NS JESD22 079N10NS
    Text: 079N10NS G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 7.9 mΩ ID 100 A • Very low on-resistance R DS(on) • 150 °C operating temperature


    Original
    PDF BSC079N10NS 079N10NS nc 80 JESD22 079N10NS

    Untitled

    Abstract: No abstract text available
    Text: 079N10NS G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 7.9 mΩ ID 100 A • Very low on-resistance R DS(on) • 150 °C operating temperature


    Original
    PDF BSC079N10NS 079N10NS