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    Untitled

    Abstract: No abstract text available
    Text: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 4500 650 16 1.4 1 2800 V A kA V mΩ Ω V Fast Recovery Diode 5SDF 07F4501 Doc. No. 5SYA1107-03 Sep. 01 • Patented free-floating silicon technology • Low on-state and switching losses • Optimized for use as freewheeling diode in GTO converters with high DC link


    Original     		PDF 07F4501 5SYA1107-03 CH-5600

    Untitled

    Abstract: No abstract text available
    Text: Key Parameters VRRM = 4500 IFAVM = 650 IFRMS = 1000 IFSM = 16 VF0 = 1.40 rF = 1 VDClink = 2800 V A A kA V mΩ V Fast Recovery Diode 5SDF 07F4501 Doc. No. 5SYA 1107-02 Feb. 99 •Patented free-floating silicon technology •Low on-state and switching losses


    Original     		PDF 07F4501 CH-5600

    Abb diode

    Abstract: GTO ABB
    Text: Key Parameters VRRM = 4500 IFAVM = 650 IFRMS = 1000 IFSM = 16 VF0 = 1.40 rF = 1 VDClink = 2800 V A A kA V mΩ V Fast Recovery Diode 5SDF 07F4501 Doc. No. 5SYA 1107-03 Feb. 99 •Patented free-floating silicon technology •Low on-state and switching losses


    Original     		PDF 07F4501 CH-5600 Abb diode GTO ABB

    Untitled

    Abstract: No abstract text available
    Text: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 4500 650 16 1.4 1 2800 V A kA V Fast Recovery Diode 5SDF 07F4501 mΩ V Doc. No. 5SYA 1107-03 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses • Optimized for use as freewheeling diode in GTO converters with high DC link


    Original     		PDF 07F4501 CH-5600

    5SDF01R2501

    Abstract: 5SGA 5SGA30J2501 RTK 031
    Text: A S Y M M E T R I C _ G T Q T H Y R I S T O R S - ± X 0 GTO - Patentierter freier Druckkontakt. - Alle GTOs werden unter Ausschalt­ grenzwerten getestet. - Ausgezeichnete O ptimierung zwiscl Durchlass- und Schaltverlusten. - Spezifizierte Höhenstrahlungsfes­


    OCR Scan     		PDF 01R2501 05D2501 05D2501 15F2502 20H2501 25H2501 30J2501 20H4502 11F2501 03D4501 5SDF01R2501 5SGA 5SGA30J2501 RTK 031

    ABB GTO

    Abstract: stud type diodes fjs 500
    Text: Fast Recovery Diodes ABB Semiconductors AG I - O ptim ized for fast and soft turn-off. Sm all reverse recovery charge. High d i/d t capability at turn-off. Range optim ally suited for G TO applications. O ptim iertes schnelles und weiches Ausschaltverhalten.


    OCR Scan     		PDF 05D2501 11F2S01 45x100 ABB GTO stud type diodes fjs 500

    ABB 5SGA

    Abstract: 2sh25 GTO ABB GTO gate drive unit 2SH2501 TJM 10 5sga 20h2501 ABB GTO R2501 5SGA 15F2502
    Text: Asymmetrie GTO Thyristors ABB Semiconductors AG I Patented free-floating silicon technology. — All G TOs are turn-off tested under maxim um ratings. — Excellent trade-off between on-state and switching losses. T yp e and ordering num ber V DRM V DC V RRM •tGQM at C s


    OCR Scan     		PDF 15F2502 15F2502 05D2501 01R2501 20H2501 05D2501 11F2501 25H2501 ABB 5SGA 2sh25 GTO ABB GTO gate drive unit 2SH2501 TJM 10 5sga 20h2501 ABB GTO R2501 5SGA 15F2502

    FSV 052

    Abstract: No abstract text available
    Text: F A S T R E C O V E R Y _ D - I O D E S - O ptim iert für schnelles und weiches Ausschaltverhalten. - Kleine Speicherladung. - Hohes zulässiges d i/d t beim Aus­ schalten. - Vollständiges Sortiment für den Einsatz mit GTOs.


    OCR Scan     		PDF 05D2505 11F2501 07F4501 13H4501 5SDF14H4505 10H6004 01R2501 01R2502 01R2503 01R2504 FSV 052