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    07AUG2001 Search Results

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    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: M74HC09 Quad 2-input and gate open drain Features • HIgh Speed: tPD = 7ns (Typ.) at VCC = 6V ) s ( t c u d o ) r s ( P t c e t u e d l o o r s Description P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b OOrder codes e t e l


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    M74HC09 DIP-14 SO-14 M74HC09 PDF

    Untitled

    Abstract: No abstract text available
    Text: M41ST84W 3.0/3.3 V I2C serial RTC with 44 bytes of NVRAM and supervisory functions Not recommended for new design Features • Automatic battery switchover and deselect – Power-fail deselect, VPFD = 2.60 V nom – Switchover, VSO = 2.50 V (nom) ■ 400 kHz I2C serial interface


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    M41ST84W 10ths/100ths PDF

    M48T512V

    Abstract: M48T512Y
    Text: M48T512Y M48T512V 5.0 or 3.3 V, 4 Mbit 512 Kbit x 8 TIMEKEEPER SRAM Features • Integrated ultra-low power SRAM, real-time clock, power-fail control circuit, battery, and crystal ■ BCD coded year, month, day, date, hours, minutes, and seconds ■ Automatic power-fail chip deselect and write


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    M48T512Y M48T512V M48T512Y: M48T512V: M48T512V M48T512Y PDF

    M41ST85W

    Abstract: M4T28-BR12SH1 M4T32-BR12SH1 M4T32-BR12SH6 SOH28
    Text: M41ST85W 3.0/3.3V I2C combination serial RTC, NVRAM supervisor and microprocessor supervisor Features • ■ SNAPHAT SH battery & crystal Automatic battery switchover and WRITE protect for: – Internal serial RTC and – External low power SRAM (LPSRAM)


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    M41ST85W 400kHz SOH28 500nA SOX28 10ths/100ths M41ST85W M4T28-BR12SH1 M4T32-BR12SH1 M4T32-BR12SH6 SOH28 PDF

    yw-360-02b

    Abstract: TRANSFORMER EI25 10 XFMR 4 TURN HORIZONTAL POWER COUPLING 822my SS11V top22x TOP243 YIH-HWA BOBBIN ENTERPRISE KME10VB47 TM501
    Text: Title Engineering Prototype Report for EP-18 10 W, Multiple Output, Isolated Power Supply with TOPSwitch-GX Input Voltage Key Specifications Output Voltages and Current Output Power Efficiency P.I. Device 85-265 VAC 3.3 V, 1.5 A 5 V, 0.9 A 30 V, 0.03 A


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    EP-18 OP243P EPR-18 05-Dec-2002 CISPR22B/EN55022B IEC60950 yw-360-02b TRANSFORMER EI25 10 XFMR 4 TURN HORIZONTAL POWER COUPLING 822my SS11V top22x TOP243 YIH-HWA BOBBIN ENTERPRISE KME10VB47 TM501 PDF

    KDS 32kHZ crystal

    Abstract: quartz crystal kds 70 AN1572 M41ST84W AN1012 AI005
    Text: M41ST84W 3.0/3.3 V I2C serial RTC with 44 bytes of NVRAM and supervisory functions Not recommended for new design Features • Automatic battery switchover and deselect – Power-fail deselect, VPFD = 2.60 V nom – Switchover, VSO = 2.50 V (nom) ■ 400 kHz I2C serial interface


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    M41ST84W 10ths/100ths KDS 32kHZ crystal quartz crystal kds 70 AN1572 M41ST84W AN1012 AI005 PDF

    TECHNICAL SPECIFICATION DATA SHEET GOLD 705

    Abstract: M41ST85W M4T28-BR12SH1 M4T32-BR12SH1 M4T32-BR12SH6 SOH28 AN934 24JAN NVRAM
    Text: M41ST85W 3.0/3.3 V I2C combination serial RTC, NVRAM supervisor and microprocessor supervisor Features SNAPHAT SH battery & crystal • Automatic battery switchover and WRITE protect for: – Internal serial RTC and – External low power SRAM (LPSRAM) ■


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    M41ST85W SOH28 TECHNICAL SPECIFICATION DATA SHEET GOLD 705 M41ST85W M4T28-BR12SH1 M4T32-BR12SH1 M4T32-BR12SH6 SOH28 AN934 24JAN NVRAM PDF

    AN1012

    Abstract: M41ST84W block diagram of energy saving ABE smd
    Text: M41ST84W 3.0/3.3 V I2C serial RTC with 44 bytes of NVRAM and supervisory functions Features • Automatic battery switchover and deselect – Power-fail deselect, VPFD = 2.60 V nom – Switchover, VSO = 2.50 V (nom) ■ 400 kHz I2C serial interface ■ 3.0/3.3 V operating voltage


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    M41ST84W 10ths/100ths AN1012 M41ST84W block diagram of energy saving ABE smd PDF

    M48T512Y

    Abstract: STMicroelectronics 1N58 5747
    Text: M48T512Y M48T512V 5.0 or 3.3 V, 4 Mbit 512 Kbit x 8 TIMEKEEPER SRAM Not recommended for new design Features • Integrated ultra low power SRAM, real-time clock, power-fail control circuit, battery, and crystal ■ BCD coded year, month, day, date, hours,


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    M48T512Y M48T512V M48T512Y: M48T512V: STMicroelectronics 1N58 5747 PDF

    JESD97

    Abstract: M74HC09 M74HC09B1R M74HC09M1R M74HC09RM13TR TSSOP14
    Text: M74HC09 Quad 2-input and gate open drain Features • HIgh Speed: tPD = 7ns (Typ.) at VCC = 6V ■ Low power dissipation: ICC = 1µA (Max.) at TA = 25°C ■ High noise immunity: VNIH = VNIL = 28 % VCC (Min.) DIP-14 ■ Balanced propagation delays: tPLH ≅ tPHL


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    M74HC09 DIP-14 SO-14 M74HC09 JESD97 M74HC09B1R M74HC09M1R M74HC09RM13TR TSSOP14 PDF

    AMP PBT GF20 connector

    Abstract: ejot torque
    Text: 7 8 THIS DRAWING IS UNPUBLISHED. VERTRAULICHE UNVEROEFFENTLICHTE ZEICHNUNG C COPYRIGHT 2000 RELEASED FOR PUBLICATION FREI FUER VEROEFFENTLICHUNG ALL RIGHTS RESERVED. ALLE RECHTE VORBEHALTEN. Tyco Electronics AMP GmbH 6 2001- - 5 4 3 2 LOC MATED WITH: PASSEND ZU:


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    21POS. 07MAY2010 07SEP2011 EGAUT00498 16MAY2012 26JUL2001 07AUG2001 21pol. AMP PBT GF20 connector ejot torque PDF

    M48T512V

    Abstract: M48T512Y 03-DEC-1999
    Text: M48T512Y M48T512V 5.0 or 3.3 V, 4 Mbit 512 Kbit x 8 TIMEKEEPER SRAM Features • Integrated ultra low power SRAM, real-time clock, power-fail control circuit, battery, and crystal ■ BCD coded year, month, day, date, hours, minutes, and seconds ■ Automatic power-fail chip deselect and WRITE


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    M48T512Y M48T512V M48T512Y: M48T512V: M48T512V M48T512Y 03-DEC-1999 PDF

    JESD97

    Abstract: M74HC09 M74HC09B1R M74HC09M1R M74HC09RM13TR TSSOP14
    Text: M74HC09 Quad 2-input and gate open drain Features • HIgh Speed: tPD = 7ns (Typ.) at VCC = 6V ■ Low power dissipation: ICC = 1µA (Max.) at TA = 25°C ■ High noise immunity: VNIH = VNIL = 28 % VCC (Min.) DIP-14 ■ Balanced propagation delays: tPLH ≅ tPHL


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    M74HC09 DIP-14 SO-14 M74HC09 JESD97 M74HC09B1R M74HC09M1R M74HC09RM13TR TSSOP14 PDF

    M4T32-BR12SH6

    Abstract: No abstract text available
    Text: M41ST85W 3.0/3.3 V I2C combination serial RTC, NVRAM supervisor and microprocessor supervisor Features SNAPHAT battery & crystal • Automatic battery switchover and WRITE protect for: – Internal serial RTC and – External low power SRAM LPSRAM ■ 400 kHz I2C serial interface


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    M41ST85W SOX28 SOH28 M4T32-BR12SH6 PDF

    Untitled

    Abstract: No abstract text available
    Text: M48T512Y M48T512V 5.0 or 3.3 V, 4 Mbit 512 Kbit x 8 TIMEKEEPER SRAM Not recommended for new design Features • Integrated ultra low power SRAM, real-time clock, power-fail control circuit, battery, and crystal ■ BCD coded year, month, day, date, hours,


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    M48T512Y M48T512V M48T512Y: M48T512V: PDF

    JESD97

    Abstract: M74HC390 M74HC390B1R M74HC390RM13TR
    Text: M74HC390 Dual decade counter Features • HIgh Speed: fMAX = 79MHz Typ. at VCC = 6V ■ Low power dissipation: ICC = 4µA (Max.) at TA = 25°C ■ High noise immunity: VNIH = VNIL = 28 % VCC (Min.) ■ Balanced propagation delays: tPLH ≅ tPHL ■ Wide operating voltage range:


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    M74HC390 79MHz DIP-16 SO-16 M74HC390 JESD97 M74HC390B1R M74HC390RM13TR PDF

    Untitled

    Abstract: No abstract text available
    Text: M74HC390 Dual decade counter Features • HIgh Speed: fMAX = 79MHz Typ. at VCC = 6V ■ Low power dissipation: ICC = 4µA (Max.) at TA = 25°C ■ High noise immunity: VNIH = VNIL = 28 % VCC (Min.) ) s t( c u d DIP-16 ■ Balanced propagation delays: tPLH ≅ tPHL


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    M74HC390 79MHz DIP-16 SO-16 M74HC390 PDF

    Untitled

    Abstract: No abstract text available
    Text: 7 8 TH I S DRAW IN G I S U N P U B L I S H E D . VFRTRAIII IFHF IJNVFRnFFFFNTI I F HTF 7F I F HNIJNfi C C O P Y R I G H T 2 00 0 BY TYCO E L E C T R O N IC S -+ftH_ f n F T " V P R n C F F F Ñ T r r r T O N f T - - - C O R P O R A T IO N . *LL ^ H T A


    OCR Scan
    03MAY2004 15FPB2006 07MAY2010 PDF

    Untitled

    Abstract: No abstract text available
    Text: 47,04 38.03 1.385X24=33.24 D —(—(— 7 7 - \^ ^ 0- 0- 0- 0- 0-0- 0-0- 0- 0- ^ ^ / / - I 5 - I 8.54±0.25 CD 1 1.385TYP. 12 25 24 10 23 9 22 8 21 7 20 6 19 5 18 4 17 3 16 2 15 1.9 V- 11 -4 0 UNC A 47.04 iO.25 RECOMMENDED P. C. B LAYOUT (T = 1 .0 0 m m )


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    385X24 385TYP. 07-AUGâ PDF

    Untitled

    Abstract: No abstract text available
    Text: 2 THIS £L DRAWING IS UNPUBLISHED. BY C O P Y R I G H T 20 RELEASED TYCO ELECTRONICS CORPORATION. ALL FOR 20 PUBLICATION R 1G H T S LOC DIST R E V ISIONS AD 00 RESERVED. LTR DESCRIPTION R E L E A S E D PER 0 G 3 C - 0 0 7 8 - 0 3 0G 3 C - 0 7 5 6 - 0 4 R E V I S E D PER ECO - 0 9 - 0 2 5 6 9 9


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    COPYRIGHT20 3C-0756-04 ECO-09 54jjm -I445297 3IMAR2000 PDF