HDMI CONNECTOR SMT
Abstract: EIA-364-31 HDMI CONNECTOR dip "HDMI connector"
Text: HDMI CONNECTOR 認定試験報告書 Qualification Test Report ５０１－５６４０－２ 07May07’ Rev.A1 1. はじめに 1.1 目 的 本試験はHDMI コネクタ の、設計目標書 108-78180 Rev.A1 に規定された性能必要条件に合致しているか確
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07May07'
25-NOV-2005
20-JAN-2006.
HDMI CONNECTOR SMT
EIA-364-31
HDMI CONNECTOR dip
"HDMI connector"
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XD 105 94V-0
Abstract: BFM 41A Zener diode smd marking code 39c transistor 1BW GENERAL SEMICONDUCTOR TVS CJ 53B 30 097 transistor 110 3CG
Text: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book transient voltage suppressors vishay general semiconductor vse-db0002-1102 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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vse-db0002-1102
XD 105 94V-0
BFM 41A
Zener diode smd marking code 39c
transistor 1BW
GENERAL SEMICONDUCTOR TVS
CJ 53B 30 097
transistor 110 3CG
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marking 3bw
Abstract: 3BZ marking 3KASMC43 3KASMC10 marking 3Bk 3bm -3.3 3KASMC18A 3KASMC24A 3KASMC28A transistor 3bw
Text: New Product 3KASMC10 thru 3KASMC43A Vishay General Semiconductor Surface Mount Automotive Transient Voltage Suppressors High Temperature Stability & High Reliability Conditions FEATURES • Patented PAR construction • Available in Unidirectional polarity only
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3KASMC10
3KASMC43A
DO-214AB
J-STD-020C,
2002/95/EC
2002/96/EC
08-Apr-05
marking 3bw
3BZ marking
3KASMC43
marking 3Bk
3bm -3.3
3KASMC18A
3KASMC24A
3KASMC28A
transistor 3bw
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bel 188 transistor
Abstract: smcj 214 ghk gez F SMCJ5.0A JESD22-B102D J-STD-002B SMCJ10 SMCJ188CA marking code BFK 94 vishay smcj
Text: SMCJ5.0 thru SMCJ188CA Vishay General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in Unidirectional and Bidirectional
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SMCJ188CA
J-STD-020C,
DO-214AB
2002/95/EC
2002/96/EC
08-Apr-05
bel 188 transistor
smcj 214 ghk
gez F
SMCJ5.0A
JESD22-B102D
J-STD-002B
SMCJ10
SMCJ188CA
marking code BFK 94
vishay smcj
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pure sinus inverter circuit diagram
Abstract: 3 phase motor soft starter circuit diagram ST7FLI19BF1U6 ATIC 64 soft starter for single phase induction motor JRC 5002 16 PIN PIR SENSOR IC PINOUT 702 TRANSISTOR smd 702 Z TRANSISTOR smd c02 sensor
Text: ST7LITE1xB 8-BIT MCU WITH SINGLE VOLTAGE FLASH MEMORY, DATA EEPROM, ADC, 5 TIMERS, SPI Memories – up to 4 Kbytes single voltage extended Flash XFlash Program memory with read-out protection, In-Circuit Programming and In-Application programming (ICP and IAP). 10K write/
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Untitled
Abstract: No abstract text available
Text: TEMD6010FX01 Vishay Semiconductors Silicon PIN Photodiode, RoHS Compliant, Released for Lead Pb -free Solder Process, AEC-Q101 Released Description TEMD6010FX01 is a high speed and high sensitive PIN photodiode in a miniature flat plastic package. It’s
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TEMD6010FX01
AEC-Q101
TEMD6010FX01
J-STD-20)
2000/53/EC,
2002/95/EC
2002/96/EC
08-Apr-05
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JESD22-B102D
Abstract: J-STD-002B P4SMA10A P4SMA10CA P4SMA11A
Text: P4SMA Series Vishay General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in Unidirectional and Bidirectional 400 W
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J-STD-020C,
2002/95/EC
2002/96/EC
DO-214AC
08-Apr-05
JESD22-B102D
J-STD-002B
P4SMA10A
P4SMA10CA
P4SMA11A
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TRANSISTOR SMD MARKING CODE 1BW
Abstract: SmD TRANSISTOR 1bw transistor SMD 5BW TRANSISTOR SMD MARKING CODE 1AM 5bw smd smd code marking 5bw KL SN 102 94v-0 smd transistor marking 3bw smd transistor 1AM yx 801
Text: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book transient voltage suppressors vishay general semiconductor vse-db0002-0710 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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vse-db0002-0710
TRANSISTOR SMD MARKING CODE 1BW
SmD TRANSISTOR 1bw
transistor SMD 5BW
TRANSISTOR SMD MARKING CODE 1AM
5bw smd
smd code marking 5bw
KL SN 102 94v-0
smd transistor marking 3bw
smd transistor 1AM
yx 801
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74670
Abstract: AN830 Si7884DP
Text: AN830 Vishay Siliconix Current Ratings for Vishay Siliconix MOSFETs By Spiro Zefferys and Dave MacDonald SUMMARY Vishay uses three approaches in providing the continuous drain current ID rating for its MOSFETs. The values are printed in the "Absolute Maximum Ratings" table on the first
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AN830
07-May-07
74670
AN830
Si7884DP
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74307
Abstract: mosfet 4468 4484 AN609 Si4413ADY 112562
Text: Si4413ADY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si4413ADY
AN609
07-May-07
74307
mosfet 4468
4484
112562
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TEMD5110
Abstract: TEMD5110X01
Text: TEMD5110X01 Vishay Semiconductors Silicon PIN Photodiode, RoHS Compliant, Released for Lead Pb -free Solder Process, AEC-Q101 Released Description TEMD5110X01 is a high speed and high sensitive PIN photodiode. It is a miniature Surface Mount Device (SMD) including the chip with a 7.5 mm2
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TEMD5110X01
AEC-Q101
TEMD5110X01
08-Apr-05
TEMD5110
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mosfet
Abstract: RthJA rthjc 74049 mosfet t 55
Text: AN830 Vishay Siliconix Vishay Siliconix MOSFET 的额定电流 作者：Spiro Zefferys 和 Dave MacDonald 摘要 Vishay 采用三种方式确定 MOSFET 的连续漏极电流（ID）额 定值。这些值记录在数据表第一页的 “绝对最大额定值”表
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AN830
Si7884DP
07-May-07
007x1
mosfet
RthJA
rthjc
74049
mosfet t 55
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TAG 280 800
Abstract: VLMW41 CIE1931
Text: VLMW41. Vishay Semiconductors Standard SMD LED PLCC-2 FEATURES • High efficient InGaN technology • Chromaticity coordinate categorized according to CIE1931 per packing unit e3 • Typical color temperature 5500 K • EIA and ICE standard package • Compatible with reflow, vapor phase and wave
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VLMW41.
CIE1931
J-STD-020C
2002/95/EC
2002/96/EC
JESD22-A114-B
08-Apr-05
TAG 280 800
VLMW41
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SiA443DJ
Abstract: SiA443DJ-T1-E3
Text: New Product SiA443DJ Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.045 at VGS = - 4.5 V - 9a 0.063 at VGS = - 2.5 V - 9a 0.088 at VGS = - 1.8 V a -9 • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®
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SiA443DJ
SC-70-6L-Single
SiA443DJ-T1-E3
08-Apr-05
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74671
Abstract: 1.6722 8114 AN609 Si3865BDV n mosfet pspice parameters
Text: Si3865BDV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si3865BDV
AN609
07-May-07
74671
1.6722
8114
n mosfet pspice parameters
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SC-89
Abstract: Si1016X Si1016X-T1 Si1016X-T1-E3
Text: Si1016X Vishay Siliconix Complementary N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 rDS(on) (Ω) ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 1.2 at VGS = - 4.5 V - 400 1.6 at VGS = - 2.5 V
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Si1016X
OT-563
SC-89
08-Apr-05
SC-89
Si1016X-T1
Si1016X-T1-E3
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74672
Abstract: 11851 AN609 Si4330DY
Text: Si4330DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si4330DY
AN609
07-May-07
74672
11851
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74677
Abstract: 4446 8809 an 7073 AN609 Si4450DY
Text: Si4450DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si4450DY
AN609
07-May-07
74677
4446
8809
an 7073
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TEMD5110
Abstract: smd led 5060 datasheet TEMD5010 led smd 5060 TEMD5010X01
Text: TEMD5010X01 Vishay Semiconductors Silicon PIN Photodiode, RoHS Compliant, Released for Lead Pb -free Solder Process, AEC-Q101 Released Description TEMD5010X01 is a high speed and high sensitive PIN photodiode. It is a miniature Surface Mount Device (SMD) including the chip with a 7.5 mm2
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TEMD5010X01
AEC-Q101
TEMD5010X01
08-Apr-05
TEMD5110
smd led 5060 datasheet
TEMD5010
led smd 5060
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SC75
Abstract: No abstract text available
Text: New Product SiB415DK Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) - 30 ID (A)a, f 0.087 at VGS = - 10 V -9 0.158 at VGS = - 4.5 V - 7.2 • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK® SC75 Package
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SiB415DK
SC-75-6L-Single
SiB415DK-T1-E3
08-Apr-05
SC75
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SiB911DK
Abstract: SC75 SiB911DK-T1-E3
Text: New Product SiB911DK Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.295 at VGS = - 4.5 V - 2.6 0.420 at VGS = - 2.5 V - 2.2 0.560 at VGS = - 1.8 V - 1.9 • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®
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SiB911DK
SC75-6L-Dual
08-Apr-05
SC75
SiB911DK-T1-E3
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RESISTOR 2322 VISHAY
Abstract: 202E VR68 c 4242
Text: VR68 Vishay BCcomponents High Ohmic up to 68 MΩ /High Voltage (up to 10 kV) Resistors FEATURES • Lead (Pb)-free solder contacts A metal glazed film is deposited on a high grade ceramic body. After a helical groove has been cut in the resistive layer, tinned electrolytic copper wires are welded to the
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UL1676"
E171160
EN60065"
08-Apr-05
RESISTOR 2322 VISHAY
202E
VR68
c 4242
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SC-70-6
Abstract: No abstract text available
Text: New Product SiA810DJ Vishay Siliconix N-Channel 20-V D-S MOSFET with Trench Schottky Diode FEATURES PRODUCT SUMMARY Qg (Typ) 0.053 at VGS = 4.5 V ID (A)a 4.5 0.063 at VGS = 2.5 V 4.5 4.1 nC 0.077 at VGS = 1.8 V 4.5 VDS (V) rDS(on) (Ω) 20 • LITTLE FOOT Plus Schottky Power MOSFET
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SiA810DJ
SC-70
SC-70-6
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: TH I S DRAW I NG IS UNPUBLI SHED. RELEASED BY C O P Y R I G HT 2 0 TYCO ELECTRONICS CORPORATION. F OR ALL 20 PUBLICATION R 1G H T S R E V I S IO N S LOC RESERVED. LTR DESCR I PTION -SEE 35 REF W □ ADD " - 2 " NO SLIT ADD LONG LEVER TYPE APVD F J 0 0 - 2386 -Û I
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OCR Scan
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I0OCT200I
0MARZ005
07MAY07
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