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    08NG Search Results

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    Part ECAD Model Manufacturer Description Download Buy
    UC3708NG4 Texas Instruments Non-Inverting High Speed Power Drivers 8-PDIP 0 to 70 Visit Texas Instruments Buy
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    08NG Price and Stock

    Microchip Technology Inc MSCSM120HRM08NG

    MOSFET 4N-CH 1200V/700V 317A
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    DigiKey MSCSM120HRM08NG Bulk 8 1
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    Avnet Americas MSCSM120HRM08NG Bulk 23 Weeks 2
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    Mouser Electronics MSCSM120HRM08NG
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    Newark MSCSM120HRM08NG Bulk 2
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    Microchip Technology Inc MSCSM120HRM08NG 23 Weeks
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    NAC MSCSM120HRM08NG 1
    • 1 $545.79
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    Richardson RFPD MSCSM120HRM08NG 2
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    Master Electronics MSCSM120HRM08NG
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    IndustrialSupplies.com 249008NGG

    88"W X 44"D X 46"H U-SHAPED RECE
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    DigiKey 249008NGG Bulk 1
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    IndustrialSupplies.com 249008NGB

    U-SHAPED RECEPTION STATION, RACE
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    DigiKey 249008NGB Bulk 1
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    Rochester Electronics LLC MC74AC08NG

    IC GATE AND 4CH 2-INP 14DIP
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    DigiKey MC74AC08NG Tube 1,158
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    onsemi MC74AC08NG

    IC GATE AND 4CH 2-INP 14DIP
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    Rochester Electronics MC74AC08NG 3,950 1
    • 1 $0.2492
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    08NG Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    48 08NG

    Abstract: 4808ng 369D NTD4808N 08NG
    Text: NTD4808N Power MOSFET 30 V, 63 A, Single N-Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi.com


    Original     		PDF NTD4808N NTD4808N/D 48 08NG 4808ng 369D NTD4808N 08NG

    08NG

    Abstract: No abstract text available
    Text: NTD4808N Power MOSFET 30 V, 63 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original     		PDF NTD4808N NTD4808N/D 08NG

    4808ng

    Abstract: 08NG
    Text: NTD4808N Power MOSFET 30 V, 63 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original     		PDF NTD4808N NTD4808N/D 4808ng 08NG

    08NG

    Abstract: IPAK d marking code dpak transistor MARKING QG 6 PIN part marking id v marking code dpak 369D NTD3808N-1G NTD3808N-35G NTD3808NT4G
    Text: NTD3808N Power MOSFET 16 V, 76 A, Single N-Channel, DPAK/IPAK Features •ăTrench Technology •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices


    Original     		PDF NTD3808N NTD3808N/D 08NG IPAK d marking code dpak transistor MARKING QG 6 PIN part marking id v marking code dpak 369D NTD3808N-1G NTD3808N-35G NTD3808NT4G

    48 08NG

    Abstract: 369D NTD4808N NTD4808NT4G 08ng
    Text: NTD4808N Power MOSFET 30 V, 63 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original     		PDF NTD4808N NTD4808N/D 48 08NG 369D NTD4808N NTD4808NT4G 08ng

    Untitled

    Abstract: No abstract text available
    Text: NTD3808N Power MOSFET 16 V, 76 A, Single N-Channel, DPAK/IPAK Features •ăTrench Technology •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices


    Original     		PDF NTD3808N NTD3808N/D

    Untitled

    Abstract: No abstract text available
    Text: NTD4808N, NVD4808N Power MOSFET 30 V, 63 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses NVD Prefix for Automotive and Other Applications Requiring


    Original     		PDF NTD4808N, NVD4808N NTD4808N/D

    48 08NG

    Abstract: 369D 4808ng 08NG NTD4808N
    Text: NTD4808N Power MOSFET 30 V, 63 A, Single N-Channel, DPAK/IPAK Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices http://onsemi.com


    Original     		PDF NTD4808N NTD4808N/D 48 08NG 369D 4808ng 08NG NTD4808N

    48 08NG

    Abstract: 369D NTD4808N NTD4808N35G TR 069
    Text: NTD4808N Power MOSFET 30 V, 63 A, Single N-Channel, DPAK/IPAK Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices http://onsemi.com


    Original     		PDF NTD4808N NTD4808N/D 48 08NG 369D NTD4808N NTD4808N35G TR 069

    Untitled

    Abstract: No abstract text available
    Text: NTD4808N, NVD4808N Power MOSFET 30 V, 63 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses NVD Prefix for Automotive and Other Applications Requiring


    Original     		PDF NTD4808N, NVD4808N NTD4808N/D

    NVD4808N

    Abstract: No abstract text available
    Text: NTD4808N, NVD4808N Power MOSFET 30 V, 63 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses NVD Prefix for Automotive and Other Applications Requiring


    Original     		PDF NTD4808N, NVD4808N AEC-Q101 NTD4808N/D