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    Untitled

    Abstract: No abstract text available
    Text: SPRAGUE/SEMICOND GROUP 8514019 SPRAGUE, T3 D • ÖS13flSG 0Q03Sbö 1 SEMICONDS / ICS 93D 03568.]/ r W ^ BIPOLAR TRANSISTOR CHIPS NPN Transistors Pro-Electron Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C IcBO THBC107 THBC107A THBC107B THBC108 THBC108A


    OCR Scan     		S13flSG 0Q03Sbà THBC107 THBC107A THBC107B THBC108 THBC108A THBC108B THBC108C THBC109 PDF

    HP5082-2835

    Abstract: HP50822835 hp5082 B1B11 step 7 micro win MP7685KD ic cmos 4090 MP7685 mpop02
    Text: M EOE b O ci 7 4 l4 4 D MICRO POWER SYSTEMS S CMOS 11-Bit Monolithic A/D Flash Converter M IC R O POWER SYSTEMS FEATURES • • • • 0DG3SbS MP7685 IN C PIN CONFIGURATION 11-BIT RESOLUTION 1 MHz Sampling Rate Single Supply Voltage 3 to 6.5V Low Power CMOS (100 mW max.)


    OCR Scan     		11-Bit MP7685 150ft, 160ft 100ft 430ft HP5082-2835) 750ft HP5082-2835 HP50822835 hp5082 B1B11 step 7 micro win MP7685KD ic cmos 4090 MP7685 mpop02 PDF

    2n4080

    Abstract: 2N4260 2N4957 JAN JAN2N4957 2N4261 JAN raytheon npn raytheon emitter pad
    Text: RAYTHEON/ 57 SEMICONDUCTOR SMALL SIGNAL TRANSISTORS p r o d u c t s p e c ific a tio n s 7597360 R AY THEON CO» 27C Ultra High Speed Logic Switches •raytheonI GV 75T?3t,0 □ □ 0 3 5 5 e] 1 PNP 03559 D J - 37- / 3 Popular Types Description Ultra high speed Silicon epitaxial


    OCR Scan     		2N4260 2N4261/JAN 2N4957/JAN 2N4261J 2N4957J 10Oil 0003St 050BSC 100BSC 54BSC 2n4080 2N4957 JAN JAN2N4957 2N4261 JAN raytheon npn raytheon emitter pad PDF