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    oscilloscope pc

    Abstract: BAS28 BAW62
    Text: • bbS3S31 N AHER 0Q24B7Ö TS7 H A P X PHILIPS/DISCRETE b7E BAS28 D SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE The BAS28 consists o f tw o separate diodes in one m icro m in ia tu re envelope intended fo r surface m ou n tin g . It concerns fast-sw itching general-purpose diodes.


    OCR Scan     		bbS3S31 0Q24B7Ã BAS28 BAS28 oscilloscope pc BAW62 PDF

    Untitled

    Abstract: No abstract text available
    Text: • bb53T31 0Q24b77 744 APX N AUER PHILIPS/DISCRETE L7E BF721 BF723 J> SILICON EPITAXIAL TRANSISTORS PNP transistors in a microminiature plastic envelope intended for application in class-B video output stages in colour television receivers, and general purpose high voltage circuits.


    OCR Scan     		bb53T31 0Q24b77 BF721 BF723 BF720 BF722 0Q24b7T PDF

    Untitled

    Abstract: No abstract text available
    Text: • bbS3^31 0Q24b71 52b H A P X N AUER PHILIPS/DISCRETE BF660 b7E » ; v SILICON PLANAR TRANSISTOR P-N-P transistor, in a microminiature plastic envelope; intended for use as oscillator in v.h.f. tuners with extended frequency range and/or in conjunction with M OS-FETs in thick and thin-film circuits.


    OCR Scan     		0Q24b71 BF660 PDF