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    Text: Philips Semiconductors bbSB'lBl 0D31Mbb 2E3 • APX Preliminary specification NPN 8 GHz wideband transistor — — BFG591 N AUER PHILIPS/DISCRETE fc^E J>" PINNING FEATURES DESCRIPTION • High power gain PIN • Low noise figure 1 emitter • High transition frequency


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    PDF 0D31Mbb BFG591 BFG591 OT223 50K/W