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Catalog Datasheet	MFG & Type	Document Tags	PDF
IN2804 Abstract: No abstract text available Text: HYM539400 M-Series •HYUNDAI 4M X 39-bit CMOS DRAM MODULE DESCRIPTION The HYM539400 is a 4M x 39-bit Fast page mode CMOS DRAM module consisting of ten HY5116400 in 24/28 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0. 22,1/ F decoupling capacitor is mounted for each DRAM.	OCR Scan	HYM539400 39-bit HY5116400 HYM539400MG/ 1CE10-10-MAY94 DQD3S35 IN2804	PDF
panasonic CR1632 Abstract: bq4285E CR1632 battery CR1632 bq4287E Text: bq4287E f e j BENCHMARQ Enhanced RTC Module With NVRAM Control Features >- D irect clock/calendar replacem ent for IBM ^ AT-compatible com puters and other applications >- 114 bytes of general nonvolatile storage ► E nhanced features include: - System w ake-up capability—	OCR Scan	bq4287E 32kHz 24-pin CR1632 15Kohm 137001e) 0DD3531 panasonic CR1632 bq4285E battery CR1632	PDF

Catalog Datasheet

MFG & Type

Document Tags

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IN2804

Abstract: No abstract text available
Text: HYM539400 M-Series •HYUNDAI 4M X 39-bit CMOS DRAM MODULE DESCRIPTION The HYM539400 is a 4M x 39-bit Fast page mode CMOS DRAM module consisting of ten HY5116400 in 24/28 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0. 22,1/ F decoupling capacitor is mounted for each DRAM.

OCR Scan

HYM539400 39-bit HY5116400 HYM539400MG/ 1CE10-10-MAY94 DQD3S35 IN2804

PDF

panasonic CR1632

Abstract: bq4285E CR1632 battery CR1632 bq4287E
Text: bq4287E f e j BENCHMARQ Enhanced RTC Module With NVRAM Control Features >- D irect clock/calendar replacem ent for IBM ^ AT-compatible com puters and other applications >- 114 bytes of general nonvolatile storage ► E nhanced features include: - System w ake-up capability—

OCR Scan

bq4287E 32kHz 24-pin CR1632 15Kohm 137001e) 0DD3531 panasonic CR1632 bq4285E battery CR1632

PDF