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BOYD Laconia 118300F00000G STANDARD CLIP CODE 83
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	118300F00000G	Bulk	18,769		1	1 $0.59 10 $0.524 100 $0.464 1000 $0.42604 10000 $0.37694	Buy Now
Mouser Electronics	118300F00000G		268			1 $0.57 10 $0.545 100 $0.497 1000 $0.395 10000 $0.347	Buy Now
Master Electronics	118300F00000G		10,025			1 - 10 - 100 $0.8683 1000 $0.4293 10000 $0.3615	Buy Now
Broadcom Limited HLPD-B0F0-00000 SENSOR PHOTODIODE 960NM RADIAL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HLPD-B0F0-00000	Cut Tape	13,970		1	1 $1.08 10 $0.665 100 $1.08 1000 $0.3429 10000 $0.3429	Buy Now
	HLPD-B0F0-00000	Reel	12,000		2,000	1 - 10 - 100 - 1000 - 10000 $0.26375	Buy Now
Mouser Electronics	HLPD-B0F0-00000		13,890			1 $1.01 10 $0.639 100 $0.426 1000 $0.264 10000 $0.264	Buy Now
Newark	HLPD-B0F0-00000	Cut Tape	47,979		1	1 $1.04 10 $0.695 100 $0.473 1000 $0.385 10000 $0.385	Buy Now
EBV Elektronik	HLPD-B0F0-00000			62 Weeks	48,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
BOYD Laconia 115000F00000G STANDARD CLIP CODE 50
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	115000F00000G	Bulk	11,466		1	1 $0.5 10 $0.443 100 $0.3932 1000 $0.36168 10000 $0.32083	Buy Now
Mouser Electronics	115000F00000G		657			1 $0.44 10 $0.434 100 $0.434 1000 $0.434 10000 $0.331	Buy Now
Bristol Electronics	115000F00000G		3,336			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Master Electronics	115000F00000G		3,950			1 - 10 - 100 $0.4354 1000 $0.3545 10000 $0.3037	Buy Now
Sager	115000F00000G		3,567		1	1 $0.32 10 $0.32 100 $0.32 1000 $0.32 10000 $0.2743	Buy Now
BOYD Laconia 115300F00000G STANDARD CLIP CODE 53
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	115300F00000G	Bulk	9,485		1	1 $0.29 10 $0.259 100 $0.2293 1000 $0.21054 10000 $0.1863	Buy Now
New Advantage Corporation	115300F00000G		7,500		1	1 - 10 - 100 - 1000 $0.2082 10000 $0.2082	Buy Now
Sager	115300F00000G				7,500	1 - 10 - 100 - 1000 - 10000 $0.1943	Buy Now
BOYD Laconia 116200F00000G STANDARD CLIP CODE 62
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	116200F00000G	Bulk	6,257		1	1 $0.46 10 $0.409 100 $0.3634 1000 $0.32242 10000 $0.2965	Buy Now

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0F0000 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
MX25L1635D Abstract: MX25L163 mx25l1635 MX25L1635DM MX25L1635DM2I-12G mx25l1 MX25L1635DM2I IN3064 MX25L1605D mx25 Text: MX25L1635D MX25L1635D DATASHEET P/N: PM1374 1 REV. 1.5, OCT. 01, 2008 MX25L1635D Contents FEATURES . 5	Original	PDF	MX25L1635D PM1374 MX25L1635D MX25L163 mx25l1635 MX25L1635DM MX25L1635DM2I-12G mx25l1 MX25L1635DM2I IN3064 MX25L1605D mx25
Untitled Abstract: No abstract text available Text: MX25V8005 8M-BIT [x 1] 2.5V CMOS SERIAL FLASH FEATURES GENERAL • Serial Peripheral Interface SPI compatible - Mode 0 and Mode 3 • 8,388,608 x 1 bit structure • 256 Equal Sectors with 4K byte each - Any Sector can be erased individually • 16 Equal Blocks with 64K byte each	Original	PDF	MX25V8005 100mA 50MHz 256-byte 120ms
MX25U4035 Abstract: MX25U8035 PM1394 land pattern for Uson Text: MX25U4035 MX25U8035 MX25U4035/MX25U8035 DATASHEET P/N: PM1394 1 REV. 1.0, MAR. 09, 2009 MX25U4035 MX25U8035 Contents FEATURES. 5	Original	PDF	MX25U4035 MX25U8035 MX25U4035/MX25U8035 PM1394 MX25U4035 MX25U8035 PM1394 land pattern for Uson
Untitled Abstract: No abstract text available Text: MX25L1673E MX25L1673E HIGH PERFORMANCE SERIAL FLASH SPECIFICATION P/N: PM1912 1 REV. 1.2, JAN. 14, 2014 MX25L1673E Contents 1. FEATURES. 4	Original	PDF	MX25L1673E PM1912
AT49BV802A Abstract: AT49BV802AT AT49BV802AT-70CI at49bv802a-70tu Text: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – Fifteen 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout	Original	PDF	3405E AT49BV802A AT49BV802AT AT49BV802AT-70CI at49bv802a-70tu
w19b320 Abstract: No abstract text available Text: W19B320AT/B Data Sheet 4M x 8/2M × 16 BITS 3V FLEXIBLE BANK FLASH MEMORY Table of Contents1. GENERAL DESCRIPTION . 4 2. FEATURES . 4	Original	PDF	W19B320AT/B w19b320
S 3590A Abstract: AT49BV163D AT49BV163DT AT49BV163DT-70TU Text: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Fast Read Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – Thirty-one 32K Word 64K Bytes Sectors with Individual Write Lockout	Original	PDF
AT25DF081A Abstract: AT25DF081A-SH AT25DF081A-SSH-T 8715a Text: Features • Single 2.7V - 3.6V Supply • Serial Peripheral Interface SPI Compatible • • • • • • • • • • • • • • • • – Supports SPI Modes 0 and 3 – Supports RapidS Operation – Supports Dual-Input Program and Dual-Output Read	Original	PDF	100MHz 85MHz 32-Kbyte 64-Kbyte 64-Kbytes 8715B AT25DF081A AT25DF081A-SH AT25DF081A-SSH-T 8715a
M29W320DT Abstract: M29W320D M29W320DB TFBGA48 Text: M29W320DT M29W320DB 32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ ACCESS TIME: 70, 90ns	Original	PDF	M29W320DT M29W320DB TSOP48 TFBGA63 TFBGA48 M29W320DT M29W320D M29W320DB TFBGA48
AM29F016D-120 Abstract: AM29F016D-150 AM29F016D-70 AM29F016D-90 SA10 SA11 SA12 SA13 Text: Am29F016D 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.23 µm process technology — Compatible with 0.5 µm Am29F016 and 0.32 µm	Original	PDF	Am29F016D Am29F016 Am29F016B AM29F016D-120 AM29F016D-150 AM29F016D-70 AM29F016D-90 SA10 SA11 SA12 SA13
SAMSUNG MCP Abstract: ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor Text: Preliminary MCP MEMORY KBB0xB400M Document Title Multi-Chip Package MEMORY 64M Bit 8M x8/4M x16 Dual Bank NOR Flash *2 / 256M Bit (16Mx16) NAND Flash / 64M Bit (4Mx16) UtRAM Revision History Revision No. History 0.0 Initial Draft (64M NOR Flash M-die_rev1.1)	Original	PDF	KBB0xB400M 16Mx16) 4Mx16) 80-Ball 80x12 SAMSUNG MCP ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor
CompactCellTM Static RAM Abstract: No abstract text available Text: PRELIMINARY Am45DL6408G Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) CompactCellTM Static RAM DISTINCTIVE CHARACTERISTICS	Original	PDF	Am45DL6408G 16-Bit) 8-Bit/512 73-Ball limitation02 CompactCellTM Static RAM
GL032A Abstract: S71GL032A S71GL032 Text: S71GL032A Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 32 Megabit (2 M x 16-bit) CMOS 3.0 Volt-only Page Mode Flash Memory and 16/8/4 Megabit (1M/512K/256K x 16-bit) Pseudo Static RAM Data Sheet ADVANCE INFORMATION Notice to Readers: The Advance Information status indicates that this	Original	PDF	S71GL032A 16-bit) 1M/512K/256K GL032A S71GL032
M15451E Abstract: No abstract text available Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD29F064115-X 64M-BIT CMOS LOW-VOLTAGE DUAL OPERATION FLASH MEMORY 4M-WORD BY 16-BIT WORD MODE PAGE MODE Description The µPD29F064115-X is a flash memory organized of 67,108,864 bits and 142 sectors. Sectors of this memory can	Original	PDF	PD29F064115-X 64M-BIT 16-BIT PD29F064115-X M15451E

SA6954 Abstract: S29WS064N S29WS128N S29WS256N WS128N FFC00 Text: S29WSxxxN MirrorBit Flash Family S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory PRELIMINARY Distinctive Characteristics Architectural Advantages Single 1.8 volt read, program and erase (1.70 to	Original	PDF	S29WSxxxN S29WS256N, S29WS128N, S29WS064N 16-Bit) SA6954 S29WS064N S29WS128N S29WS256N WS128N FFC00
Untitled Abstract: No abstract text available Text: Spansion Analog and Microcontroller Products The following document contains information on Spansion analog and microcontroller products. Although the document is marked with the name “Fujitsu”, the company that originally developed the specification, Spansion	Original	PDF
Untitled Abstract: No abstract text available Text: K8D6x16UTM / K8D6x16UBM FLASH MEMORY Document Title 64M Bit 8M x8/4M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft January 10, 2002 Preliminary 1.0 Final Specification May 22, 2002 Final 1.1 Revised	Original	PDF	K8D6x16UTM K8D6x16UBM 48TSOP1 16M/16M 08MAX
MD4832-D512-V3Q18-X-P Abstract: md4832d512v3q MD4811-D512-V3Q18-X dragonball mx1 Diskonchip QUALCOMM Reference manual AD12 AD14 PR31700 MD4331-d1G-V3Q18-X-P Text: Mobile DiskOnChip G3 512Mbit/1Gbit Flash Disk with MLC NAND and M-Systems’ x2 Technology Preliminary Data Sheet, June 2003 Highlights Mobile DiskOnChip G3 is one of the industry’s most efficient storage solutions, using Toshiba’s 0.13 µm Multi-Level Cell MLC	Original	PDF	512Mbit/1Gbit 91-SR-011-05-8L MD4832-D512-V3Q18-X-P md4832d512v3q MD4811-D512-V3Q18-X dragonball mx1 Diskonchip QUALCOMM Reference manual AD12 AD14 PR31700 MD4331-d1G-V3Q18-X-P
Untitled Abstract: No abstract text available Text: Preliminary W28F321BT/TT 32MBIT 2MBIT x 16 PAGE MODE DUAL WORK FLASH MEMORY 1. GENERAL DESCRIPTION The W28F321, a 4-Plane Page Mode Dual Work (Simultaneous Read while Erase/Program) Flash memory, is a low power, high density, cost efficiency, nonvolatile read/write storage solution for a wide	Original	PDF	W28F321BT/TT 32MBIT W28F321, W28F321
lv8011 Abstract: AT49BV8011 AT49BV8011T AT49LV8011 AT49LV8011T Text: Features • Single Supply for Read and Write: 2.7V to 3.3V BV , 3.0V to 3.3V (LV) • Access Time – 90 ns • Sector Erase Architecture • • • • • • • • • • • Fourteen 32K Word (64K Byte) Sectors with Individual Write Lockout Two 16K Word (32K Byte) Sectors with Individual Write Lockout	Original	PDF	1265E 01/00/xM lv8011 AT49BV8011 AT49BV8011T AT49LV8011 AT49LV8011T
LHF00L14 Abstract: No abstract text available Text: PRODUCT SPECIFICATIONS Integrated Circuits Group LHF00L14 Flash Memory 32M 2MB x 16 (Model No.: LHF00L14) Spec No.: EL163055 Issue Date: March 15, 2004 LHF00L14 • Handle this document carefully for it contains material protected by international copyright law. Any reproduction,	Original	PDF	LHF00L14 LHF00L14) EL163055 LHF00L14
th50vsf1400 Abstract: BA30 Text: TOSHIBA TH 50VSF1400/1401ACXB TENTATIVE TOSHIBA MULTI CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM A N D FLASH M E M O R Y M IX E D M U LTI-C H IP PACKAGE DESCRIPTION The TH50VSF1400/1401ACXB is a mixed containing a package 2,097,152-bit SRAM and a 16,777,216-bit flash memory. The SRAM is organized as 262,144 words by 8 bits and the flash memory	OCR Scan	PDF	50VSF1400/1401ACXB TH50VSF1400/1401ACXB 152-bit 216-bit 48-pin 50VSF1400/1401 th50vsf1400 BA30
L323C Abstract: No abstract text available Text: ADVANCE INFORMATION AMDZ1 Am29DL32xC 32 Megabit 4 M x 8 -Bit/2 M x 16-Bit CMOS 3.0 Volt-only, Sim ultaneous Operation Flash Mem ory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Simultaneous Read/Write operations — Data can be continuously read from one bank w hile	OCR Scan	PDF	Am29DL32xC 16-Bit) 29DL32xC L323C
032XM Abstract: No abstract text available Text: ADVANCE INFORMATION AMDB Am29LV033C 32 Megabit 4 M x 8-Bit CMOS 3.0 Volt-only Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES SOFTWARE FEATURES • Zero Power Operation ■ — Sophisticated power management circuits reduce	OCR Scan	PDF	Am29LV033C 63-ball 40-pin 032XM

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BOYD Laconia 118300F00000G

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0F0000 Datasheets Context Search

MX25L1635D

Untitled

MX25U4035

Untitled

AT49BV802A

w19b320

S 3590A

AT25DF081A

M29W320DT

AM29F016D-120

SAMSUNG MCP

CompactCellTM Static RAM

GL032A

M15451E

SA6954

Untitled

Untitled

MD4832-D512-V3Q18-X-P

Untitled

lv8011

LHF00L14

th50vsf1400

L323C

032XM