2N5832
Abstract: 2n6008
Text: ALLEGRO MICROSYSTEMS 8514019 INC SPRA G U E. =13 » • 0SD433Ô G 0 G 3 S Ô C1 Ô ■ S E M IC O N D S / I C S 93D 03589 ALGR D T 'ü - 1 - PLASTIC-CASE BIPOLAR TRANSISTORS NPN Transistors ‘2N’ and ‘TP’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C
|
OCR Scan
|
0SD433Ô
TP5810
TP5812
TP5814
TP5816
TP5818
TP5820
TP5822
TP5824
TP5825
2N5832
2n6008
|
PDF
|
diode LR 105
Abstract: 1N914
Text: L ALLEGRO MICROSYSTEMS ^3 INC D • 0SD433Ô □ □ □ 3 7 CI D 1 ■ ALGR T-91-01 PROCESS TSB Process TSB High-Speed Switching Diode This gold-doped silicon epitaxial diode, designed to meet 1N914 specifications, has a typical reverse recovery time of 3.2 ns and a typical junction capaci
|
OCR Scan
|
0SD433Ã
D037ciG
T-91-01
1N914
diode LR 105
|
PDF
|
Untitled
Abstract: No abstract text available
Text: L ALLEGRO MI C R O S Y S T E M S INC =13 » 0SD433Û G0037ÖD IALGR T-91-01 PROCESS BKF Process BKF Schottky Diode P roce ss B K F is a high-speed silicon Schottkybarrier diode. It has a typical breakdown-voltage rat ing of 7 0 V and can operate with up to 200 m A of
|
OCR Scan
|
0SD433Ã
G0037Ã
T-91-01
10M-A
|
PDF
|
TRANSISTOR 1003
Abstract: No abstract text available
Text: ALL E GR O MICROSYSTEMS 8 5 1 4 0 1 9 SPRA GU E. INC =13 D • 0SD433Û S E M I C O N D S / ICS ÜGD3S7b T ■ ALGR 9 3 D 035 76 Ï * ' ' Ö BIPOLAR TRANSISTOR CHIPS PNP Transistors Pro-Electron Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C IcBO DC Current Gain
|
OCR Scan
|
0SD433Û
THBC177
THBC177A
THBC177B
THBC178
THBC178A
THBC178B
THBC178C
THBC179
THBC179B
TRANSISTOR 1003
|
PDF
|
BCW71 AG
Abstract: No abstract text available
Text: AL L E GRO MI C ROS Y S T E MS 8514019 I NC SPRAGU E. TB » • 0SD433A G0D3bG5 SEM ICONDS / IC S 2 ■ ALGR 93D 03605J ' SMALL-OUTLINE BIPOLAR TRANSISTORS_ NPN Transistors ELECTRICAL CHARACTERISTICS at TA = 25°C DC Current Gain
|
OCR Scan
|
0SD433A
03605J)
BCW31
BCW32
BCW33
BCW60A
BCW60B
BCW60C
BCW60D
BCW65A
BCW71 AG
|
PDF
|
3363A
Abstract: Q06-5 ULN3330T ULN3360T 994c uln3330 ULN3363T ULN-3360 ULN-3330T GQ-05
Text: - i A L L E G R O M I C R O S Y S T E M S INC «.♦* 33E ]> 3 3 3 0 \ w fcS ISSU 0SD433Ô GOOSMS1 Q • A L Û R , 3 3 6 0 , OPTOELECTRONIC SWITCHES The ULN3330T/TA, ULN3360T, and ULN3363T optoelectronic switches provide light detection and low-level signal processing in
|
OCR Scan
|
0S0433Ã
GQ05M51
TJLN3330/60/63T
PH009
ULN3330T/TA,
ULN3360T,
ULN3363T
3363A
Q06-5
ULN3330T
ULN3360T
994c
uln3330
ULN-3360
ULN-3330T
GQ-05
|
PDF
|
THC5128
Abstract: THC4945 THC4946 THC4951 THC4952 THC4953 THC4954 THC4966 THC4967 THC4968
Text: AL L E GRO MI C ROS Y S T E MS 8 5 1 4 0 1 9 SP RA GU E. I NC T3 D • 0SD433Ô 0003Sb5 T «ALGR 9 3 D 0 3 5 6 2 iD S E M I C O N D S / ICS BIPOLAR TRANSISTOR CHIPS NPN Transistors ‘TH’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C DC Current Gain
|
OCR Scan
|
0SQ433Ã
00035fc
THC4945
THC4946
THC4951
THC4952
THC5232
THC5232A
THC5249
THC5249A
THC5128
THC4953
THC4954
THC4966
THC4967
THC4968
|
PDF
|
zener
Abstract: No abstract text available
Text: AL LE GR O MICROSYSTEMS INC T3 » 0SD433Ô 00D3ÔÜ0 □ • AL GR T -9 1 -0 1 ZENER DIODES Process ZC, ZE and ZK Zener Diodes >Silicon Epitaxial Layer Construction for Low Series Resistance ■Buried Zener Junction for High Reliability ■Silicon Nitride Passivation
|
OCR Scan
|
0SD433Ô
E--03
zener
|
PDF
|
THZ027W05
Abstract: THZ5R6W05 THZ6R2W05 THZ6R8W05 THZ7R5W05 THZ8R2W05 THZ024W10 SPRAGUE 748
Text: ALLEGRO MICROSYSTEMS 8 5 1 4 0 1 9 S P R A GU E. INC T3 D • 0SD433Û S E M I C O N D S / ICS 0QD3b5 M t. ■ 93D 03624 ALGR VT-//-OS DIODE CHIPS ‘THZ’ Series ‘W’ Zener Diodes ELECTRICAL CHARACTERISTICS at Tfl = 25°C Zener Voltage Leakage Current
|
OCR Scan
|
0SD433Ã
00D3b5M
THZ5R6W05
THZ5R6W10
THZ6R2W05
THZ6R2W10
THZ6R8W05
THZ6R8W10
THZ7R5W05
THZ030W05
THZ027W05
THZ8R2W05
THZ024W10
SPRAGUE 748
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 8-CHANNEL SOURCE DRIVER WITH OVER-CURRENT PROTECTION Providing over-current protection for each of its eight sourcing outputs, the UDN2987A and UDN2987LW drivers are used as an interface between standard low-level logic and relays, motors, sole noids, LEDs, and incandescent lamps. The device includes thermal
|
OCR Scan
|
UDN2987A
UDN2987LW
05G433A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SOLI» STATE DEVICES INC 12E D |fl3t.b011 25amp • bridge rectifier assembly T | § Ü | r-*:-r' Average output 25 Amps PIV 50 to 1000 Volts Ma xi mu m thermal resistance 1.5°C/Watt Universal Three-Way terminals All machined aluminum case Glass passivated diode cells
|
OCR Scan
|
25amp
SDA167G
fl3tb011
0SD43
|
PDF
|
Untitled
Abstract: No abstract text available
Text: am Data Sheet 26300.5 8958 VOICE CO IL M O TO R D RIVER A8958CEA ! i l I i£ I Providing control and drive of the voice coil motor used for head positioning in disk drive applications, the A 8958- is a full-bridge driver which can be configured so that its output current is a direct function
|
OCR Scan
|
A8958CEA
0SG433A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DUAL DMOS FULL-BRIDGE MICRO STEPPING PWMMOTOR DRIVER Designed for pulse-width modulated PWM current control of bipolar microstepping stepper motors, the A3972SB is capable of continuous output currents to ±1.5 A and operating voltages to 50 V. Internal fixed off-time PWM current-control timing circuitry can be
|
OCR Scan
|
A3972SB
Q5Q433Ã
|
PDF
|
NPN Transistor BC548B
Abstract: BC548 BC238B npn bc337-40 npn transistor
Text: ALLEGRO MICROSYSTEMS INC 14 D • 0504330 00047^4 3 ■ ALGR T~^9-0| SPRAGUE PROELECTRON T092J TRANSISTOR TYPES»! PROELECTRON T092 TRANSISTOR TYPES Typ« No. Polarity Chip Process BC167A BC167B BC168A BC168B BC168C BC169B BC169C BC182LA BC182LB BC212LA BC212LB
|
OCR Scan
|
T092J
BC167A
BC167B
BC168A
BC168B
BC168C
BC169B
BC169C
BC182LA
BC182LB
NPN Transistor BC548B
BC548
BC238B npn
bc337-40 npn transistor
|
PDF
|
|
|
D00373
Abstract: GDG3737 A138
Text: ALLEGRO MICROSYSTEMS INC 13 î • 0SDM33Ô GD03737 fl ■ T-91-01 PROCESS VHB Process VHB PNP High-Voltage Transistor Process V H B is a P N P double-diffused silicon epi taxial planar device. It is designed for use in highvoltage amplifier circuits. It is the complement to NPN
|
OCR Scan
|
05DM33Ã
GDG3737
T-91-01
D00373
A138
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PRO TEC TED , HIGH-TEMPERATZJKE, OPEN-CO LLECTO R HALL-EFFECT LATC H These open-collector Hall-effect latches are capable of sensing magnetic fields while using an unprotected power supply. The A3197can provide position and speed information by providing a digital output
|
OCR Scan
|
A3197can
0S0433Ã
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HIGH-CUBRENT HALF-BRIDGE MOTOR DRIVER Designed for use as a general-purpose motor driver, the UDN and UDQ2943Z half-bridge drivers combine high-current sink and source drivers with logic stages, level shifting, diode transient protection, and a voltage regulator for single-supply operation. Capable of operating
|
OCR Scan
|
UDQ2943Z
05D433Ã
WP-024
EP-053
0SD433A
EP-054
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DUAL PERIPHERAL/POWER DRIVER —ENHANCED OUTPUT CAPABILITY The UDN5725M power driver combines NAND and NOR logic gates in a configuration particularly useful with small brushless dc motor drivers. The integrated circuit includes high-current saturated output transistors and transient-suppression diodes. It can be used in
|
OCR Scan
|
UDN5725M
0SD433Ã
0D05211
|
PDF
|
Untitled
Abstract: No abstract text available
Text: VOICE COIL MOTOR DRIVER I RET SET V B£MF GROUND Providing control and drive of the voice coil motor used for head positioning in 5 V disk drive applications, the second-generation A8932CLWA is a full-bridge driver which can be configured so that its output current is a direct function of an externally applied control
|
OCR Scan
|
A8932CLWA
EP-041D
|
PDF
|
SN75512
Abstract: No abstract text available
Text: BiMOS U 12-BIT SERIAL-INPUT, LATCHED SOURCE DRIVER Designed primarily for use with vacuum-fluorescent displays, the UCN5811A smart power BiMOS II driver features low-output saturation voltages and high output switching speed. These devices contain CMOS shift registers, data latches, and control circuitry, and bipolar
|
OCR Scan
|
12-BIT
UCN5811A
SN75512
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ALLEGRO MICROSYSTEMS INC 33 E D 0504330 000Sb2ô 2 BIAL GR COUNTDOWN POWER TIMERS MODE SELECT NO CONNECTION NO CONNECTION Dwg. PS-016 The ULQ2436M and ULQ2437M are rugged, long-duration count down timers specifically designed to operate in an automotive or
|
OCR Scan
|
000Sb2Ã
PS-016
ULQ2436M
ULQ2437M
ES-013
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Ä Data Sheet 26186.20 i S i i ADDRESSABLE 28-U N E DECODER/DRiVER Intended for use in ink-jet printer applications, the A5817SEP addressable 28-line decoder/driver combines low-power CMQflynputs and logic with 28 high-current, high-voltage bipolar o u tp u ^^^tlfe H 4
|
OCR Scan
|
A5817SEP
28-line
gfeacl14-driver
0SD433Ã
|
PDF
|
A103 ROTARY
Abstract: A3515XUA A108 A3515LUA A3516 GSD4 oq 0051 1906c D5043
Text: AND R A T I O M ETR IC , L IN E A R H A L L -E F F E C T SEN SO R S F O R H IG H -T E M P E R A T IJR E O PER A TIO N The A3515- and A3516- are sensitive, temperature-stable linear Hall-effect sensors with greatly improved offset characteristics. Ratiometric, linear Hall-effect sensors provide a voltage output that is
|
OCR Scan
|
PH006
MH-0140mm
A103 ROTARY
A3515XUA
A108
A3515LUA
A3516
GSD4
oq 0051
1906c
D5043
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ADVANCE INFORMATION subject to change without notice Juäy 7, 1998 The A3280—and A3281—Hall-effect latches are extremely temperature-stable and stress-resistant sensors especially suited for operation over extended temperature ranges to +150°C. Superior high-temperature
|
OCR Scan
|
A3280â
A3281â
MH-014D
MH-014Dfrvn
|
PDF
|
