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    10 AMP NPN POWER TRANSISTORS WITH LOW SATURATION VOLTAGE Search Results

    10 AMP NPN POWER TRANSISTORS WITH LOW SATURATION VOLTAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR3DF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 300 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR1HF50B Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 5.0 V, 150 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    10 AMP NPN POWER TRANSISTORS WITH LOW SATURATION VOLTAGE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MA 78S40 regulator

    Abstract: 78S40 Switching Voltage Regulator 78s40 ua 78s40
    Text: LM78S40 Universal Switching Regulator Subsystem General Description Features The LM78S40 is a monolithic regulator subsystem consisting of all the active building blocks necessary for switching regulator systems. The device consists of a temperature compensated voltage reference, a duty-cycle controllable oscillator with an active current limit circuit, an error amplifier, high


    Original     		PDF LM78S40 AN-711: 2-Mar-99 5-Aug-2002] MA 78S40 regulator 78S40 Switching Voltage Regulator 78s40 ua 78s40

    Untitled

    Abstract: No abstract text available
    Text: MJE200G NPN , MJE210G (PNP) Complementary Silicon Power Plastic Transistors These devices are designed for low voltage, low−power, high−gain audio amplifier applications. Features • • • • • 5.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON


    Original     		PDF MJE200Gâ MJE210Gâ MJE200/D

    BD788G

    Abstract: BD787G BD788 MSD6100 1N5825 BD787
    Text: BD787 − NPN, BD788 − PNP Complementary Plastic Silicon Power Transistors These devices are designed for lower power audio amplifier and low current, high−speed switching applications. Features http://onsemi.com • Low Collector−Emitter Sustaining Voltage − VCEO sus 60 Vdc (Min)


    Original     		PDF BD787 BD788 BD787/D BD788G BD787G MSD6100 1N5825

    ZTX653

    Abstract: ztx652 Zetex ZTX653
    Text: ZTX652 Not Recommended for New Design Please Use ZTX653 ZTX652 ZTX653 ISSUE 2 – JULY 94 FEATURES * 100 Volt VCEO * 2 Amp continuous current * Low saturation voltage * Ptot=1 Watt ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER


    Original     		PDF ZTX652 ZTX653 ZTX653 100lector IC/10 Zetex ZTX653

    mje243 transistor

    Abstract: MJE253 MJE243 equivalent MJE243
    Text: ON Semiconductor NPN MJE243 * PNP MJE253 * Complementary Silicon Power Plastic Transistors . . . designed for low power audio amplifier and low–current, high–speed switching applications. *ON Semiconductor Preferred Device • High Collector–Emitter Sustaining Voltage —


    Original     		PDF MJE243 MJE253 MJE243, r14525 MJE243/D mje243 transistor MJE253 MJE243 equivalent MJE243

    1N5825

    Abstract: MJE200 MJE210 MSD6100 mje210 motorola
    Text: MOTOROLA Order this document by MJE200/D SEMICONDUCTOR TECHNICAL DATA Complementary Silicon Power Plastic Transistors NPN MJE200* PNP MJE210* . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage —


    Original     		PDF MJE200/D MJE200* MJE210* MJE200/D* 1N5825 MJE200 MJE210 MSD6100 mje210 motorola

    BDW42G

    Abstract: 30VDC BDW42 BDW46 BDW46G BDW47 BDW47G
    Text: BDW42G - NPN, BDW46G, BDW47G - PNP Darlington Complementary Silicon Power Transistors This series of plastic, medium−power silicon NPN and PNP Darlington transistors are designed for general purpose and low speed switching applications. Features • High DC Current Gain − hFE = 2500 typ @ IC = 5.0 Adc.


    Original     		PDF BDW42G BDW46G, BDW47G BDW46 BDW42/BDW47 O-220AB BDW42/D 30VDC BDW42 BDW46 BDW46G BDW47

    ssd1001

    Abstract: HDD spindle motor circuit SSD1002 pump motor 12v datasheet spindle motor circuit sensorless circuit SSD2003 1.5A 2A voice coil Driver "BANDGAP REFERENCE" cross bldc electric drive spindle
    Text: www.fairchildsemi.com KA2811C 12V Spindle Motor and Voice Coil Motor Driver Features Description SMP Circuit The KA2811C is a monolithic one-chip IC which includes SPM Spindle motor driver, VCM (Voice coil motor) driver and peripheral driver, designed for driving HDD motor. For


    Original     		PDF KA2811C KA2811C ssd1001 HDD spindle motor circuit SSD1002 pump motor 12v datasheet spindle motor circuit sensorless circuit SSD2003 1.5A 2A voice coil Driver "BANDGAP REFERENCE" cross bldc electric drive spindle

    2sC5200, 2SA1943

    Abstract: 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent
    Text: 2011-4 PRODUCT GUIDE Power Transistors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g Power Transistors for Audio Power Amplifiers Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current


    Original     		PDF BCE0016D 2sC5200, 2SA1943 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent

    to225a

    Abstract: to225aa TO-225AA to225
    Text: MJE170, MJE171, MJE172 PNP , MJE180, MJE181, MJE182 (NPN) Complementary Plastic Silicon Power Transistors The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. Features • Collector−Emitter Sustaining Voltage −


    Original     		PDF MJE170, MJE171, MJE172 MJE180, MJE181, MJE182 MJE170/180 MJE180 to225a to225aa TO-225AA to225

    TO-220AB transistor package

    Abstract: bdw42G
    Text: BDW42G - NPN, BDW46G, BDW47G - PNP Darlington Complementary Silicon Power Transistors This series of plastic, medium−power silicon NPN and PNP Darlington transistors are designed for general purpose and low speed switching applications. Features • High DC Current Gain − hFE = 2500 typ @ IC = 5.0 Adc.


    Original     		PDF BDW42G BDW46G, BDW47G BDW46 BDW42/BDW47 O-220AB BDW42/D TO-220AB transistor package

    BOX 53C IC

    Abstract: BOX 53C darlington power transistor box 54c IC BDX53BG BDX54CG pin orientation for bdx53c transistor BDX54B
    Text: BDX53B, BDX53C NPN , BDX54B, BDX54C (PNP) Plastic Medium-Power Complementary Silicon Transistors These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc


    Original     		PDF BDX53B, BDX53C BDX54B, BDX54C BDX53B/D BOX 53C IC BOX 53C darlington power transistor box 54c IC BDX53BG BDX54CG pin orientation for bdx53c transistor BDX54B

    BU40x

    Abstract: No abstract text available
    Text: BU406, BU407 NPN Power Transistors These devices are high voltage, high speed transistors for horizontal deflection output stages of TV’s and CRT’s. Features • • • • High Voltage: VCEV = 330 or 400 V Fast Switching Speed: tf = 750 ns max Low Saturation Voltage: VCE(sat) = 1 V (max) @ 5 A


    Original     		PDF BU406, BU407 BU406 BU406/D BU40x

    BU406

    Abstract: BU407
    Text: ON Semiconductor BU406 BU407 NPN Power Transistors These devices are high voltage, high speed transistors for horizontal deflection output stages of TV’s and CRT’s. • • • • High Voltage: VCEV = 330 or 400 V Fast Switching Speed: tf = 750 ns max)


    Original     		PDF BU406 BU407 220AB r14525 BU406/D BU406 BU407

    Untitled

    Abstract: No abstract text available
    Text: Order this document by MC33033/D MC33033 Brushless DC Motor Controller BRUSHLESS DC MOTOR CONTROLLER The MC33033 is a high performance second generation, limited feature, monolithic brushless dc motor controller which has evolved from Motorola′s full featured MC33034 and MC33035 controllers. It contains all of the active


    Original     		PDF MC33033/D MC33033 MC33033 MC33034 MC33035 MC33033/D*

    tip122 pin out diagram

    Abstract: tip127 pin out diagram tip127 pin details TIP127 Application Note tip122 transistor TIP12x TIP125G TIP122 transistor APPLICATION NOTES TIP120G tip127 application notes
    Text: TIP120, TIP121, TIP122 NPN ; TIP125, TIP126, TIP127 (PNP) Plastic Medium-Power Complementary Silicon Transistors http://onsemi.com Designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − = 2500 (Typ) @ IC


    Original     		PDF TIP120, TIP121, TIP122 TIP125, TIP126, TIP127 TIP125 TIP126 tip122 pin out diagram tip127 pin out diagram tip127 pin details TIP127 Application Note tip122 transistor TIP12x TIP125G TIP122 transistor APPLICATION NOTES TIP120G tip127 application notes

    MJD200

    Abstract: MJD200G MJD200RLG MJD200T4G MJD210 MJD210G MJD210RLG MJD210T4
    Text: MJD200 NPN MJD210 (PNP) Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mount Applications http://onsemi.com Designed for low voltage, low−power, high−gain audio amplifier applications. Features • Collector−Emitter Sustaining Voltage −


    Original     		PDF MJD200 MJD210 MJD200/D MJD200 MJD200G MJD200RLG MJD200T4G MJD210 MJD210G MJD210RLG MJD210T4

    MJD200

    Abstract: MJD200G MJD200RL MJD200RLG MJD200T4 MJD200T4G MJD210 MJD210G
    Text: MJD200 NPN MJD210 (PNP) Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mount Applications http://onsemi.com Designed for low voltage, low−power, high−gain audio amplifier applications. Features • Collector−Emitter Sustaining Voltage −


    Original     		PDF MJD200 MJD210 MJD200/D MJD200 MJD200G MJD200RL MJD200RLG MJD200T4 MJD200T4G MJD210 MJD210G

    TIPI42

    Abstract: TIP1411 TIP142 TIP147 TIP140 TIP141 TIP142 TIP145 TIP146 TIP147 TIPI47
    Text: ÆàMOS PEC DARLINGTON COPLEMENTARY SILICON POWER TRANSISTORS .designed for general-purpose amplifier and low speed switching applications FEATURES: * Collector-Emitter Sustaining VoltageVCeo sus = 60 V (Min) - TIP140.TIP145 = 80 V (Min) - TIP141.TIP146


    OCR Scan     		PDF TIP140 TIP145 TIP141 TIP146 TIP142 TIP147 TIP145 TIP146 TIPI42 TIP1411 TIP142 TIP147 TIP147 TIPI47

    TIPI22

    Abstract: TIPI20 T1P125 TIPI21 V-I characteristics of TIP122 TIP122T TRANSISTOR tip122 features TIP127 Application Note TIP120 TIP122
    Text: ÆfcMOSPEC PLASTIC MEDIUM-POWER COPLEMENTARY SILICON TRANSISTORS NPN TIP120 TIP121 TIP122 .designed for general-purpose amplifier and low speed switching applications FEATURES: * Collector-Emitter Sustaining VoltageV ceopus, = 60 V Min - TIP120.TIP125


    OCR Scan     		PDF TIP120 TIP125 TIP121 TIP126 TIP122 TIP127 TIP121 TIPI22 TIPI20 T1P125 TIPI21 V-I characteristics of TIP122 TIP122T TRANSISTOR tip122 features TIP127 Application Note

    JE4342

    Abstract: No abstract text available
    Text: M OTOROLA SEMICONDUCTOR TECHNICAL DATA M D II M JE4342 H igh-Voltage — High Power Transistors . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • • • High Collector-Emitter Sustaining Voltage —


    OCR Scan     		PDF JE4342 MJE4342 MJE4352 MJE4343 MJE4353 JE4343 JE4352 JE4353

    TRANSISTOR MARKING YB 1L

    Abstract: 2SK 2SA 2SC equivalent ON 4497 HF transistor 1B01F transistor 2sc 1586 i203 transistor transistor 2sk power amp transistor bc 2sk transistor 2sk 70 TBC846
    Text: 2. List of Principal Characteristics of Transistors 2. List of Principal Characteristics of Transistors 2.1 Small Super Mini Type SSM < T ra n s is to r for G eneral Purpose, Low Frequency E q u ip m e n t> VCEtMÜ MAX. hFE Type No. V CEO (V) NPN PNP 2SC 4738


    OCR Scan     		PDF 2SC4841 OT89/SC62) TRANSISTOR MARKING YB 1L 2SK 2SA 2SC equivalent ON 4497 HF transistor 1B01F transistor 2sc 1586 i203 transistor transistor 2sk power amp transistor bc 2sk transistor 2sk 70 TBC846

    LM33G

    Abstract: pin configuration of ic LM339 LM339N comparator pin configuration v1ni lm339 pin diagram lm339n pin diagram lm33G pin diagram ttl AND gate LM139 APPLICATIONS LM339F
    Text: LM139/339 OIMînEÜ^OlL V o lta g e C o m p a ra to rs FEATURES GENERAL DESCRIPTION • Wide single supply voltage range or dual supplies The LM139 series consists of four independent precision voltage comparators with an offset voltage specification as low as 2 mV max for all four comparators. These were


    OCR Scan     		PDF LM139/339 LM139 250mV LM139/339 12ESB 1N914 LM33G pin configuration of ic LM339 LM339N comparator pin configuration v1ni lm339 pin diagram lm339n pin diagram lm33G pin diagram ttl AND gate LM139 APPLICATIONS LM339F

    2n6251 application

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by 2N6251/D SEMICONDUCTOR TECHNICAL DATA 2N 6251 High V o ltag e NPN Silicon Pow er Transistors . . . designed for high voltage inverters, sw itching regulators and line operated amplifier applications. Especially well suited for switching power supply applications.


    OCR Scan     		PDF 2N6251/D 2n6251 application