SOT89 transistor marking
Abstract: SOT89 MARKING CODE PNP TRANSISTOR "SOT89" marking code NA sot23 Transistor 5C5 "PNP Transistor" PNP TRANSISTOR SOT89 PNP Epitaxial Silicon Transistor sot223 sot89 "NPN TRANSISTOR" NPN transistor collector base and emitter
Text: PRODUCT announcement New Tiny Packages High Voltage Small Signal Transistors SOT-563 SOT-523 Dual Single SOT-23 SOT-89 SOT-223 SOT-228 Single Single Single Dual features • VCEO = 160V NPN , 150V (PNP) • IC = 600mA (NPN), 500mA (PNP) • Ideal for high voltage amplifier applications
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OT-563
OT-523
OT-23
OT-89
OT-223
OT-228
600mA
500mA
CMLT5551HC
OT-563)
SOT89 transistor marking
SOT89 MARKING CODE
PNP TRANSISTOR "SOT89"
marking code NA sot23
Transistor 5C5
"PNP Transistor"
PNP TRANSISTOR SOT89
PNP Epitaxial Silicon Transistor sot223
sot89 "NPN TRANSISTOR"
NPN transistor collector base and emitter
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MARKING 67 SOT89
Abstract: transistor 5551 sot-89 marking code transistor sot code amplifier marking code D amplifier marking code a transistor sot sot-223 code marking 5551 datasheet SOT89 MARKING CODE
Text: PRODUCT announcement Higher Current, High Voltage NPN Transistors SOT-228 SOT-223 SOT-89 SOT-23 SOT-563 Dual Single Single Single Single Sample Devices features • Higher current than standard 5551 available 1.0 Amp vs. standard current 600mA • Single and Dual configurations
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OT-228
OT-223
OT-89
OT-23
OT-563
600mA)
5551HC
600mA
MARKING 67 SOT89
transistor 5551
sot-89 marking code
transistor sot code
amplifier marking code D
amplifier marking code a
transistor sot
sot-223 code marking
5551 datasheet
SOT89 MARKING CODE
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marking L07
Abstract: CMLT2907A
Text: CMLT2907A SURFACE MOUNT DUAL PNP SILICON TRANSISTOR SOT-563 CASE MAXIMUM RATINGS: TA=25°C SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Collector Current IC Power Dissipation PD Operating and Storage Junction Temperature
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CMLT2907A
OT-563
CMLT2907A
100MHz
150mA,
marking L07
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Untitled
Abstract: No abstract text available
Text: CMLT5088EM SURFACE MOUNT SILICON DUAL, MATCHED NPN TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT5088EM consists of two individual, isolated 5088E NPN silicon transistors with matched VBE ON characteristics. This device is designed for applications requiring high
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CMLT5088EM
5088E
OT-563
12-February
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Untitled
Abstract: No abstract text available
Text: CMLT5087EM SURFACE MOUNT SILICON DUAL, MATCHED PNP TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT5087EM consists of two individual, isolated 5087E PNP silicon transistors with matched VBE ON characteristics. This device is designed for applications requiring high
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CMLT5087EM
5087E
OT-563
12-February
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Untitled
Abstract: No abstract text available
Text: CMLT8099M SURFACE MOUNT SILICON DUAL, MATCHED NPN TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT8099M consists of two individual, isolated 8099 NPN silicon transistors with matched VBE ON characteristics. This device is manufactured by the epitaxial planar
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CMLT8099M
OT-563
12-February
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Untitled
Abstract: No abstract text available
Text: CMLT2907A w w w. c e n t r a l s e m i . c o m SURFACE MOUNT SILICON DUAL PNP TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT2907A consists of two individual, isolated 2907A PNP silicon transistors, manufactured by the epitaxial planar process and epoxy molded in an SOT-563 surface
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CMLT2907A
OT-563
100MHz
150mA,
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dual npn 500ma
Abstract: npn switching transistor 60v CMLT2222A MARKING CODE l22
Text: Central CMLT2222A SURFACE MOUNT DUAL NPN SMALL SIGNAL SWITCHING TRANSISTORS TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT2222A type is a dual NPN small signal switching transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount
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CMLT2222A
OT-563
x10-4
100mA,
150mA,
dual npn 500ma
npn switching transistor 60v
CMLT2222A
MARKING CODE l22
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CMLDM7005R
Abstract: No abstract text available
Text: CMLDM7005 CMLDM7005R SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: These CENTRAL SEMICONDUCTOR devices are dual N-Channel enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier and driver
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CMLDM7005
CMLDM7005R
CMLDM7005.
CMLDM7005:
CMLDM7005R:
OT-563
350mW
500mA
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Untitled
Abstract: No abstract text available
Text: CMLT2207G SURFACE MOUNT SILICON DUAL, COMPLEMENTARY TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT2207G consists of one isolated 2N2222A NPN transistor and one complementary isolated 2N2907A PNP transistor, manufactured by the epitaxial planar process and
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CMLT2207G
2N2222A
2N2907A
OT-563
Res30V,
150mA,
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Untitled
Abstract: No abstract text available
Text: CMLDM8005 SURFACE MOUNT SILICON DUAL P-CHANNEL ENHANCEMENT-MODE MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM8005 consists of dual P-Channel enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier
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CMLDM8005
350mW
OT-563
200mA
200mA,
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Untitled
Abstract: No abstract text available
Text: CMLDM7005 SURFACE MOUNT SILICON DUAL N-CHANNEL ENHANCEMENT-MODE MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM7005 consists of dual N-Channel enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier
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CMLDM7005
OT-563
350mW
500mA
200mA,
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Untitled
Abstract: No abstract text available
Text: CMLDM7005 SURFACE MOUNT SILICON DUAL N-CHANNEL ENHANCEMENT-MODE MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM7005 consists of dual N-Channel enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier
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CMLDM7005
OT-563
350mW
500mA
200mA,
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Untitled
Abstract: No abstract text available
Text: CMLDM8005 SURFACE MOUNT SILICON DUAL P-CHANNEL ENHANCEMENT-MODE MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM8005 consists of dual P-Channel enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier
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CMLDM8005
350mW
OT-563
200mA
200mA,
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7c3 transistor
Abstract: No abstract text available
Text: CMLDM3737 SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFETS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM3737 consists of Dual N-Channel Enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier
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CMLDM3737
OT-563
28-October
540mA,
7c3 transistor
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Untitled
Abstract: No abstract text available
Text: CMLDM7005 SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFETS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM7005 consists of Dual N-Channel Enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier
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CMLDM7005
350mW
OT-563
CMLDM8005
500mA
400mA
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VDS16V
Abstract: 7c3 transistor 10 marking code dual transistor sot563
Text: CMLDM3737 SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFETS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM3737 consists of Dual N-Channel Enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier
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CMLDM3737
350mW
OT-563
CMLDM5757
28-October
540mA,
VDS16V
7c3 transistor
10 marking code dual transistor sot563
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Untitled
Abstract: No abstract text available
Text: CMLDM3737 SURFACE MOUNT SILICON DUAL N-CHANNEL ENHANCEMENT-MODE MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM3737 consists of dual silicon N-Channel enhancement-mode MOSFETs designed for high speed pulsed amplifier
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CMLDM3737
OT-563
28-January
500mA
540mA,
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CMLDM8005
Abstract: No abstract text available
Text: CMLDM8005 SURFACE MOUNT DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFETS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM8005 consists of Dual P-Channel Enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier
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CMLDM8005
350mW
OT-563
CMLDM7005
200mA
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Untitled
Abstract: No abstract text available
Text: CMLDM7005 SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFETS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM7005 consists of Dual N-Channel Enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier
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CMLDM7005
350mW
OT-563
CMLDM8005
500mA
400mA
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cc8 transistor
Abstract: CMLDM8005
Text: CMLDM8005 SURFACE MOUNT DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFETS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM8005 consists of Dual P-Channel Enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier
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CMLDM8005
350mW
OT-563
CMLDM7005
200mA
cc8 transistor
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Untitled
Abstract: No abstract text available
Text: CMLDM8005 SURFACE MOUNT DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFETS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM8005 consists of Dual P-Channel Enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier
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CMLDM8005
350mW
OT-563
200mA
200mA,
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CMLT8099M
Abstract: No abstract text available
Text: Central CMLT8099M TM Semiconductor Corp. SURFACE MOUNT DUAL, MATCHED NPN SILICON TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT8099M consists of two individual, isolated 8099 NPN silicon transistors with matched VBE ON characteristics. This PICOminiTM device is manufactured by the epitaxial
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CMLT8099M
OT-563
OT-563
CMLT8099M
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Untitled
Abstract: No abstract text available
Text: Central CMLT2207 Semiconductor Corp. SURFACE MOUNT PlCOmini™ DUAL,COMPLEMENTARY SILICON TRANSISTORS DESCRIPTION: The Central Semiconductor CMLT2207 con sists of one 2N2222A NPN silicon transistor and one individual isolated complementary 2N2907A PNP silicon transistor, manufactured
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OCR Scan
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CMLT2207
2N2222A
2N2907A
OT-563
X10-4
X10-4
OT-563
13-November
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