Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: A2T26H160-24S Rev. 0, 8/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 28 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2496 to
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A2T26H160--24S
A2T26H160-24SR3
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RO4350
Abstract: RO4350B transistor 0882 docsis V 8623 transistor 32QAM CGH55015F1 2J302 CGH5501 CGH55015
Text: CGH55015F1 / CGH55015P1 15 W, 5500-5800 MHz, GaN HEMT for WiMAX Cree’s CGH55015F1/CGH55015P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F1/
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CGH55015F1
CGH55015P1
CGH55015F1/CGH55015P1
CGH55015F1/
CGH55015P1
CGH5501
CGH55
015F1
RO4350
RO4350B
transistor 0882
docsis
V 8623 transistor
32QAM
2J302
CGH5501
CGH55015
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CGH55015F
Abstract: transistor 0882 32QAM cgh55015 256QAM CGH5501 CGH55015F-TB CGH55015-TB VCGH55015F RO4350B
Text: CGH55015F 15 W, 5500-5800 MHz, GaN HEMT for WiMAX Cree’s CGH55015F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F ideal for 5.5-5.8 GHz WiMAX and
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CGH55015F
CGH55015F
CGH5501
CGH55015
transistor 0882
32QAM
256QAM
CGH5501
CGH55015F-TB
CGH55015-TB
VCGH55015F
RO4350B
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Untitled
Abstract: No abstract text available
Text: Ultra High Dynamic Range Monolithic Amplifier 50Ω PHA-1+ 0.05 to 6 GHz The Big Deal FREE X-Parameters* • Ultra High IP3 • Broadband High Dynamic Range without external Matching Components • May be used as a replacement to WJ AH1a,b SOT-89 PACKAGE ☛ LTE Performance
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OT-89
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Driver amplifier SOT-89
Abstract: MARKING AH1A pha1
Text: Ultra High Dynamic Range Monolithic Amplifier 50Ω PHA-1+ 0.05 to 6 GHz The Big Deal • Ultra High IP3 • Broadband High Dynamic Range without external Matching Components • May be used as a replacement to WJ AH1a,b SOT-89 PACKAGE ☛ LTE Performance
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OT-89
Driver amplifier SOT-89
MARKING AH1A
pha1
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PDF
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Untitled
Abstract: No abstract text available
Text: Ultra High Dynamic Range Monolithic Ampli er 50 PHA-1+ 0.05 to 6 GHz The Big Deal FREE X-Parameters* •UltraHighIP3 • BroadbandHighDynamicRangewithout externalMatchingComponents • MaybeusedasareplacementtoWJAH1a,b
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OT-89à
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PHA-1
Abstract: wj ah1 AH1A TB313
Text: Ultra High Dynamic Range Monolithic Amplifier 50Ω PHA-1+ 0.05 to 6 GHz The Big Deal • Ultra High IP3 • Broadband High Dynamic Range without external Matching Components • May be used as a replacement to WJ AH1a,b SOT-89 PACKAGE ☛ LTE Performance
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OT-89
PHA-1
wj ah1
AH1A
TB313
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PDF
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Untitled
Abstract: No abstract text available
Text: Ultra High Dynamic Range Monolithic Amplifier 50Ω PHA-1+ 0.05 to 6 GHz The Big Deal FREE X-Parameters* • Ultra High IP3 • Broadband High Dynamic Range without external Matching Components • May be used as a replacement to WJ AH1a,b SOT-89 PACKAGE ☛ LTE Performance
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OT-89
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CGH55015F1
Abstract: No abstract text available
Text: CGH55015F1 / CGH55015P1 15 W, 5500-5800 MHz, GaN HEMT for WiMAX Cree’s CGH55015F1/CGH55015P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F1/CGH55015P1
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CGH55015F1
CGH55015P1
CGH55015F1/CGH55015P1
CGH55015F1/
CGH55015P1
CGH5501
CGH55
015F1
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CGH55015F1
Abstract: CGH55015P1 CGH5501 CGH55015 CGH55015-TB VCGH55015F
Text: CGH55015F1 / CGH55015P1 15 W, 5500-5800 MHz, GaN HEMT for WiMAX Cree’s CGH55015F1/CGH55015P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F1/CGH55015P1
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CGH55015F1
CGH55015P1
CGH55015F1/CGH55015P1
CGH55015F1/CGH55015P1
CGH55015F1/
CGH55015P1
CGH5501
CGH55
015F1
CGH5501
CGH55015
CGH55015-TB
VCGH55015F
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Untitled
Abstract: No abstract text available
Text: CGH55015F1 / CGH55015P1 15 W, 5500-5800 MHz, GaN HEMT for WiMAX Cree’s CGH55015F1/CGH55015P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F1/CGH55015P1
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CGH55015F1
CGH55015P1
CGH55015F1/CGH55015P1
CGH55015F1/CGH55015P1
CGH55015F1/
CGH55015P1
CGH5501
CGH55
015F1
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17975
Abstract: CGH55015F1 cgh55015 CGH5501 CGH55015P1 CGH55015-TB VCGH55015F 2J302
Text: CGH55015F1 / CGH55015P1 15 W, 5500-5800 MHz, GaN HEMT for WiMAX Cree’s CGH55015F1/CGH55015P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F1/
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CGH55015F1
CGH55015P1
CGH55015F1/CGH55015P1
CGH55015F1/
CGH55015P1
CGH5501
CGH55
015F1
17975
cgh55015
CGH5501
CGH55015-TB
VCGH55015F
2J302
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Untitled
Abstract: No abstract text available
Text: CGH55015F1 / CGH55015P1 15 W, 5500-5800 MHz, GaN HEMT for WiMAX Cree’s CGH55015F1/CGH55015P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F1/CGH55015P1
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CGH55015F1
CGH55015P1
CGH55015F1/CGH55015P1
CGH55015F1/
CGH55015P1
CGH5501
CGH55
015F1
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Transistor J550
Abstract: j584 transistor
Text: Document Number: AFT26H200W03S Rev. 0, 8/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 45 watt asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous
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AFT26H200W03S
AFT26H200W03SR6
Transistor J550
j584 transistor
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PL-255
Abstract: GVA-84 Amplifier 1W SOT-89
Text: 5 Volt-Surface Mount Monolithic Amplifier DC-6 GHz Product Features • High Gain, 24 dB typ. at 100 MHz • High IP3, 37 dBm typ. at 100 MHz • High Pout, P1dB 20.5 dBm typ. at 100 MHz • Fixed 5V operation • Unconditionally stable • Transient protected
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GVA-84+
DF782
2002/95/EC)
C/85RH
AS9100
PL-255
GVA-84
Amplifier 1W SOT-89
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Untitled
Abstract: No abstract text available
Text: 5 Volt-Surface Mount Monolithic Ampli er DC-7 GHz Product Features •HighGain,24dBtyp.at100MHz •HighPout,P1dB20.5dBmtyp.at100MHz •HighIP3,37dBmtyp.at100MHz •Ruggedizeddesign
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GVA-84+
DF782
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Untitled
Abstract: No abstract text available
Text: 5 Volt-Surface Mount Monolithic Amplifier DC-7 GHz Product Features • High Gain, 24 dB typ. at 100 MHz • High Pout, P1dB 20.5 dBm typ. at 100 MHz • High IP3, 37 dBm typ. at 100 MHz • Ruggedized design • Fixed 5V operation • Unconditionally stable
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GVA-84+
DF782
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Untitled
Abstract: No abstract text available
Text: 5 Volt-Surface Mount Monolithic Amplifier DC-7 GHz Product Features • High Gain, 24 dB typ. at 100 MHz • High Pout, P1dB 20.5 dBm typ. at 100 MHz • High IP3, 37 dBm typ. at 100 MHz • Ruggedized design • Fixed 5V operation • Unconditionally stable
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GVA-84+
DF782
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D260-4118-0000
Abstract: MRFE6VS25L MRFE6VS25GNR1 transistor J128 2422D 21-201-J ATC100B2R7BT500XT crcw12065k60f avx c0805c103k5rac MRFE6VS25NR1
Text: Freescale Semiconductor Technical Data Document Number: MRFE6VS25N Rev. 1, 12/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to
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MRFE6VS25N
MRFE6VS25NR1
MRFE6VS25GNR1
MRFE6VS25N
D260-4118-0000
MRFE6VS25L
MRFE6VS25GNR1
transistor J128
2422D
21-201-J
ATC100B2R7BT500XT
crcw12065k60f
avx c0805c103k5rac
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MARKING V84
Abstract: BLK-18 DF782 GVA-84 N5242A ZX85-12G-S marking 66 mmic sot-89 TB-410-84
Text: 5 Volt-Surface Mount Monolithic Amplifier DC-7 GHz Product Features • High Gain, 24 dB typ. at 100 MHz • High Pout, P1dB 20.5 dBm typ. at 100 MHz • High IP3, 37 dBm typ. at 100 MHz • Ruggedized design • Fixed 5V operation • Unconditionally stable
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GVA-84+
DF782
2002/95/EC)
MARKING V84
BLK-18
DF782
GVA-84
N5242A
ZX85-12G-S
marking 66 mmic sot-89
TB-410-84
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Untitled
Abstract: No abstract text available
Text: 5 Volt-Surface Mount Monolithic Amplifier DC-7 GHz Product Features • High Gain, 24 dB typ. at 100 MHz • High Pout, P1dB 20.5 dBm typ. at 100 MHz • High IP3, 37 dBm typ. at 100 MHz • Ruggedized design • Fixed 5V operation • Unconditionally stable
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GVA-84+
DF782
2002/95/EC)
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PDF
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GVA-84
Abstract: No abstract text available
Text: 5 Volt-Surface Mount Monolithic Amplifier DC-7 GHz Product Features • High Gain, 24 dB typ. at 100 MHz • High Pout, P1dB 20.5 dBm typ. at 100 MHz • High IP3, 37 dBm typ. at 100 MHz • Ruggedized design • Fixed 5V operation • Unconditionally stable
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GVA-84+
DF782
2002/95/EC)
GVA-84
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PDF
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Untitled
Abstract: No abstract text available
Text: 5 Volt-Surface Mount Monolithic Amplifier DC-7 GHz Product Features • High Gain, 24 dB typ. at 100 MHz • High Pout, P1dB 20.5 dBm typ. at 100 MHz • High IP3, 37 dBm typ. at 100 MHz • Ruggedized design • Fixed 5V operation • Unconditionally stable
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GVA-84+
DF782
2002/95/EC)
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PDF
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Untitled
Abstract: No abstract text available
Text: 5 Volt-Surface Mount Monolithic Amplifier DC-7 GHz Product Features • High Gain, 24 dB typ. at 100 MHz • High Pout, P1dB 20.5 dBm typ. at 100 MHz • High IP3, 37 dBm typ. at 100 MHz • Ruggedized design • Fixed 5V operation • Unconditionally stable
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GVA-84+
DF782
2002/95/EC)
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PDF
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