stm32f107
Abstract: MCBQVGA LD1117S33 pc10 k2 5 CS42L52 LIS302DL PC13-TAMPER-RTC BOOT03
Text: C58 VDD1_5 C26 C27 C34 10uF 100n 100n 100n 49 74 99 27 10 +3,3V R36 VDDA C35 0R 100n R60 VREF+ C39 1k 0R R61 R69 E POT1 AV S A C1 100n PC4 VREF+ 0R 100n 50 75 100 28 11 C25 RESET 22 19 21 20 VDD_1 VDD_2 VDD_3 VDD_4 VDD_5 VSS_1 VSS_2 VSS_3 VSS_4 VSS_5 VDDA
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STM32F107
PC13-TAMPER-RTC
PC14-OSC32
PC15-OSC32
1800p
001uF
1800p
MCBSTM32C-Vers20
50MHz
stm32f107
MCBQVGA
LD1117S33
pc10 k2 5
CS42L52
LIS302DL
BOOT03
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TB214
Abstract: bn-61-2402 BN-61-202 ft37-61 LQ801 bn612402 FT-37-61 bn61-202 P123 FB43101
Text: 2 1 +28V C3 10n R1 3.9k C8 10u D1 B B P1 POT L1 22AWG, 9x through FT-37-61 R2 3.9k C1 100n C4 10n T1 22AWG, 9x through FT-37-61 R4 100 T2a RF in L2 COAX C5 100n T3 M1 RF out COAX COAX C2 100n COAX R3 180 COAX COAX C6 100n COAX COAX M2 C7 10n T2b A A R5 100
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22AWG,
FT-37-61
FB-43-101
BN-61-2402
TB214,
LQ801,
20MHz-1000MHz,
TB214
bn-61-2402
BN-61-202
ft37-61
LQ801
bn612402
FT-37-61
bn61-202
P123
FB43101
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SDO21
Abstract: n10 n75 JTAG 10P N-61 N78N12
Text: N98 PS2DAT 97 N97 X32I 7 N7 X32O 8 N8 68 VDD_2 0R N99 99 VREF PVSS D+ 31 N31 D- 30 N30 RESET 94 25 N93 N92 R20 C14 0R VSS_0 R27 95 VSS_1 69 VSS_2 0R N[1.100] 10p 100n 100n 100n N80 80 AVDD XT1_IN 93 N70 70 AVSS XT1_OUT 92 N8 X32O Q1 N94 C8 N7 X32I R26 R13
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PA7/SS21/ADC7
PA10/I2C1SDA
PA11/I2C1SCL
PA12/PWM0
PA13/PWM1
PA14/PWM2
PA15/PWM3
PD0/SS20
PD2/SDI20
PD3/SDO20
SDO21
n10 n75
JTAG 10P
N-61
N78N12
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PC817 zener diode
Abstract: diode zener 1N4148 BC337 pc817 PC817 PIn L5991 C6 PC817 15V zener PC817 STP10NK60Z con20A
Text: 5 3 1 T2 T3 10mH D1 2 4 100n + 2 1 10 C3 220u D3 D2 STPS30H100 C4 4.7n R1 3 NTC - 16 +9V TRNSFMR PLT20 C2 t 1 4 C18 100n 100n D 3 T1 20mH 4 C1 2 3 2.5A FUSE N 2 DIODE BRIDGE F1 1 F 4 D L2 1 33K C19 2 47uH 1n C5 220u 14 D4 Q1 STX715 1N4148 R19 C6 220u R20 100
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STPS30H100
PLT20
STX715
1N4148
STTH106
L5991
STP10NK60Z
PC817
RL431
PC817 zener diode
diode zener 1N4148
BC337 pc817
PC817 PIn
L5991
C6 PC817
15V zener
PC817
STP10NK60Z
con20A
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BF245
Abstract: "shortwave receiver" shortwave receiver 10,7mhz drm receiver 7808 C4270 SA612 10 MHz 1st IF IC2 LM386
Text: DDSR1 10,688 MHz 10,712 MHz Oscillator C38 100n C36 C37 C1 100n 1n Oscillator Input X1 SOCKET +12V 7808 REG 7808 10,7 MHz CerRes ANTENNA SFE107 C15 in gnd out R16 100 E1 Regulator Q1 BF245 R1 47k R15 1k L1 L2 L3 0.33µ C2 150 0.39µ C3 270 0.33µ C4 270
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SFE107
BF245
SA612A
V02-Rev1
BF245
"shortwave receiver"
shortwave receiver
10,7mhz
drm receiver
7808
C4270
SA612
10 MHz 1st IF
IC2 LM386
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Untitled
Abstract: No abstract text available
Text: 2N6718 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)150þ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)100 V(CE)sat Max. (V).50 @I(C) (A) (Test Condition)250m
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2N6718
Freq50M
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Untitled
Abstract: No abstract text available
Text: FZT653 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)120 I(C) Max. (A)2 Absolute Max. Power Diss. (W)2 Maximum Operating Temp (øC)150 I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)100 h(FE) Min. Current gain.100 h(FE) Max. Current gain.300
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FZT653
Freq140M
StyleSOT-223
Code4-179
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Untitled
Abstract: No abstract text available
Text: SG252 Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)200m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC) I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.100 h(FE) Max. Current gain.
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SG252
Freq200M
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Untitled
Abstract: No abstract text available
Text: FCX704 Transistors PNP Darlington Transistor Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)120 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.5 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)100 h(FE) Min. Current gain.3k
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FCX704
Freq160M
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Untitled
Abstract: No abstract text available
Text: FCX604 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)120 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)100 h(FE) Min. Current gain.2k
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FCX604
Freq150M
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Untitled
Abstract: No abstract text available
Text: BDB02D Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)500m Absolute Max. Power Diss. (W)1.0’ Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)100 V(CE)sat Max. (V).70 @I(C) (A) (Test Condition)1.0
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BDB02D
Freq50M
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Untitled
Abstract: No abstract text available
Text: BC372-16 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)625m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)80 h(FE) Min. Current gain.10k
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BC372-16
Freq100M
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Untitled
Abstract: No abstract text available
Text: FZT704 Transistors PNP Darlington Transistor Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)120 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)100 h(FE) Min. Current gain.3.0k
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FZT704
Freq160MÃ
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Untitled
Abstract: No abstract text available
Text: FZT493 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)120 I(C) Max. (A)1 Absolute Max. Power Diss. (W)2 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)100 h(FE) Min. Current gain.100 h(FE) Max. Current gain.300
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FZT493
Freq150M
StyleSOT-223
Code4-179
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Untitled
Abstract: No abstract text available
Text: SDT3504 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)7.0 Maximum Operating Temp (øC) I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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SDT3504
Freq50M
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Untitled
Abstract: No abstract text available
Text: LM161RS Transistors Half Bridge MOSFET Power Module Circuits Per Package1 V BR DSS (V)100 V(BR)GSS (V) I(D) Max. (A)33 Absolute Max. Power Diss. (W)100 Maximum Operating Temp (øC)125õ Thermal Resistance Junc-Case I(DSS) Min. (A)1.0m I(GSS) Max. (A)100n @V(GS) (V) (Test Condition)
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LM161RS
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Untitled
Abstract: No abstract text available
Text: SDT3512 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)29 Maximum Operating Temp (øC) I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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SDT3512
Freq50M
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Untitled
Abstract: No abstract text available
Text: LM161R Transistors Half Bridge MOSFET Power Module Circuits Per Package1 V BR DSS (V)100 V(BR)GSS (V) I(D) Max. (A)33 Absolute Max. Power Diss. (W)100 Maximum Operating Temp (øC)125õ Thermal Resistance Junc-Case I(DSS) Min. (A)1.0m I(GSS) Max. (A)100n @V(GS) (V) (Test Condition)
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LM161R
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Untitled
Abstract: No abstract text available
Text: LM161S Transistors Half Bridge MOSFET Power Module Circuits Per Package1 V BR DSS (V)100 V(BR)GSS (V) I(D) Max. (A)33 Absolute Max. Power Diss. (W)100 Maximum Operating Temp (øC)125õ Thermal Resistance Junc-Case I(DSS) Min. (A)1.0m I(GSS) Max. (A)100n @V(GS) (V) (Test Condition)
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LM161S
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Untitled
Abstract: No abstract text available
Text: LM161 Transistors Half Bridge MOSFET Power Module Circuits Per Package1 V BR DSS (V)100 V(BR)GSS (V) I(D) Max. (A)33 Absolute Max. Power Diss. (W)100 Maximum Operating Temp (øC)125õ Thermal Resistance Junc-Case I(DSS) Min. (A)1.0m I(GSS) Max. (A)100n @V(GS) (V) (Test Condition)
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LM161
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Untitled
Abstract: No abstract text available
Text: 2N3599 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)20 Absolute Max. Power Diss. (W)100 Maximum Operating Temp (øC)175# I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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2N3599
Freq30M
time700n
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Untitled
Abstract: No abstract text available
Text: MINIATURE INDUSTRIAL COMPRESSION LOAD CELL FOR INDUSTRIAL APPLICATIONS TO 200,000 NEWTONS LCMGD Series Shown Actual Size Compression 0-100 to 0-200,000 Newtons LCMGD $ 460 LCMGD-2K LCMGD-100N LCMGD-2KN MADE IN USA LCMGD-50KN NIST ߜ High Accuracy ߜ Low Profile
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LCMGD-100N
LCMGD-50KN
LCMGD-200N
LCMGD-500N
LCMGD-10KN
LCMGD-20KN
LCMGD-200KN
DP41-S,
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Untitled
Abstract: No abstract text available
Text: MJD243 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)4.0 Absolute Max. Power Diss. (W)13 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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MJD243
Freq40M
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Untitled
Abstract: No abstract text available
Text: ZTX653 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)100è V(BR)CBO (V)120 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)2.5 Maximum Operating Temp (øC)175 I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.100 h(FE) Max. Current gain.300
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ZTX653
Freq175M
StyleTO-92
Code3-12
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