DG417
Abstract: DG418 MAX4655 MAX4656 MAX4658 MAX4655ETA
Text: 19-1984; Rev 2; 2/04 High-Current, 10Ω, SPST, CMOS Analog Switches Maxim’s MAX4655–MAX4658 are medium-voltage CMOS analog switches with low on-resistance of 10Ω max, specifically designed to handle large switch currents. With a switch capability of up to 400mA peak current and 300mA continuous current MAX4655/
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MAX4655
MAX4658
400mA
300mA
MAX4655/
MAX4656)
150mA
MAX4657/MAX4658)
MS012
DG417
DG418
MAX4656
MAX4655ETA
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SKY77733
Abstract: sky77814 3G HSDPA repeater SKY77778-61 SKY77621 diode Marking code L4W SE2435
Text: Product Selection Guide November 2014 Skyworks Solutions Skyworks Solutions, Inc. is an innovator of high performance analog semiconductors. Leveraging core technologies, Skyworks supports automotive, broadband, wireless infrastructure, energy management, GPS, industrial, medical, military, wireless networking, smartphone, and tablet
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BRO254-14B
SKY77733
sky77814
3G HSDPA repeater
SKY77778-61
SKY77621
diode Marking code L4W
SE2435
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PDF
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SKY77733
Abstract: QUALCOMM FLIP CHIP ASSEMBLY SKY77765 aat2430 aat3604 aat140
Text: Product Selection Guide June 2013 Skyworks Solutions Skyworks Solutions, Inc. is an innovator of high performance analog semiconductors. Leveraging core technologies, Skyworks supports automotive, broadband, wireless infrastructure, energy management, GPS, industrial, medical, military, wireless networking, smartphone, and tablet
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BRO254-13A
SKY77733
QUALCOMM FLIP CHIP ASSEMBLY
SKY77765
aat2430
aat3604
aat140
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PDF
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SKY77709
Abstract: SKY77432 AAT2430 SMV1275-079 aat3604 DIODE AA116 TT6P3-0860T
Text: Product Selection Guide June 2014 Skyworks Solutions Skyworks Solutions, Inc. is an innovator of high performance analog semiconductors. Leveraging core technologies, Skyworks supports automotive, broadband, wireless infrastructure, energy management, GPS, industrial, medical, military, wireless networking, smartphone, and tablet
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BRO254-14A
SKY77709
SKY77432
AAT2430
SMV1275-079
aat3604
DIODE AA116
TT6P3-0860T
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PDF
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bourns torque angle sensor
Abstract: 4116r resistor pack H 7555 4116R chassis level sensor c650 diode ptc fuel level sensor bourns fuel card BOURNS MF-LSMF PROTE TUBE
Text: Bourns Product Profile Automotive Sensors Circuit Protection Solutions Magnetics Products Microelectronic Modules Precision Potentiometers Panel Controls & Encoders Resistive Products Bourns® Product Profile Table of Contents Components Trimpot® Trimming
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e/K0920
bourns torque angle sensor
4116r resistor pack
H 7555
4116R
chassis level sensor
c650 diode
ptc fuel level sensor
bourns fuel card
BOURNS MF-LSMF
PROTE TUBE
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PDF
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4116r resistor pack
Abstract: bourns fuel card chip resistors bourns bourns torque angle sensor 0201-size Battery chargers for portable dvd china rs485 fuel level sensor "steering Angle Sensor" chassis PT90 bourns 3549
Text: Bourns Product Profile Automotive Sensors Circuit Protection Solutions Magnetics Products Microelectronic Modules Precision Potentiometers Panel Controls & Encoders Resistive Products Bourns® Product Profile Table of Contents Components Trimpot® Trimming
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50M/K0809
4116r resistor pack
bourns fuel card
chip resistors bourns
bourns torque angle sensor
0201-size
Battery chargers for portable dvd china
rs485 fuel level sensor
"steering Angle Sensor"
chassis PT90
bourns 3549
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PDF
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Untitled
Abstract: No abstract text available
Text: IW* VITELIC V 5 3 C 4 6 4 FA M ILY H IG H PERFORMANCE, LOW POWER 6 4 K X 4 B IT FA ST PAGE M O D E C M O S D Y N A M IC R A M 7 0 /7 0 L 80/80L 10/10L 12/12L Max. RAS Access Time, tRAC 70 ns 80 ns 100 ns 120 ns Max. Column Address Access Time, (tCAA) 35 ns
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80/80L
10/10L
12/12L
V53C464
V53C464L
V53C464
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PDF
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Untitled
Abstract: No abstract text available
Text: bSE ]> m o s e l -vi tel ic MOSEL- VITELIC • bBSBBTl DGQnñS V53C664 6 4 K x 16 B IT F A S T P A G E M O D E B Y T E W R ITE C M O S D Y N A M IC R A M V53C664 P R E L IM IN A R Y 80/80L 10/10L Max. RAS Access Time, tRAn 80 ns 100 ns Max. Column Address Access Time, (tr s 4)
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V53C664
80/80L
10/10L
V53C664L
16-bit
V53C664K10
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PDF
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Untitled
Abstract: No abstract text available
Text: M O S E L -V IT E L ie V53C664 6 4 K x 16 B IT F A S T P A G E M O D E B Y TE W R ITE C M O S D Y N A M IC R A M V53C664 P R E LIM IN A R Y 80/80L 10/10L Max. RAS Access Time, tR4f0 80 ns 100 ns Max. Column Address Access Time, (tr 4 a 45 ns 55 ns Min. Fast Page Mode Cycle Time, (tpp)
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V53C664
80/80L
10/10L
V53C664L
200nA
16-bit
V53C664
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PDF
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8L-10L
Abstract: No abstract text available
Text: MITSUBISHI LSIs SDRAM Rev.1.3 Mar'98 M5M4V64S40ATP-8A,-8L,-8, -10L, -10 64M (4-BANK x 1048576-WORD x 16-BIT) Synchronous DRAM Some of contents are subject to change without notice. PIN CONFIGURATION (TOP VIEW) DESCRIPTION The M5M4V64S40ATP is a 4-bank x 1048576-word x 16-bit
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M5M4V64S40ATP-8A
1048576-WORD
16-BIT)
M5M4V64S40ATP
16-bit
125MHz,
51ndersea
8L-10L
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PDF
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Untitled
Abstract: No abstract text available
Text: 8,192 WORD X 8 BIT CMOS STATIC RAM Id e s c r i p t i o n I The TC5563APL is a 65,536 bit static random access m emory organized as 8,192 words by 8 bits u sin g CMOS technology, and operates from a single 5V supply. Advanced circuit techniques provide both high speed and low power features w ith a m axim um operating current of 5mA7MHz
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TC5563APL
100ns/120ns/150ns.
TC5563APLâ
TC5563APL-12L
DIP28-P-300B)
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary Speo. M it s u b is h i lsis Some contents are subject to change w ithout notice. MH8S64AKD -8,-10,-8L,-10L 536870912-BIT 8388608 - WORD BY 64-BIT SynchronousDRAM DESCRIPTION The MH8S64AKD is 8388608 - word by 64-bit Synchronous DRAM module. This consists of eight
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MH8S64AKD
536870912-BIT
64-BIT
64-bit
MIT-DS-0131-1
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PDF
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l64324
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET D S 0 5 -1 1 0 5 2 -1 E MEMORY CMOS 4 X 512 K x 32 BIT SYNCHRONOUS DYNAMIC RAM MB811L643242B -10/-12/-15/-10L/-12L/-15L CMOS 4-Bank x 524,288-Word x 32 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu M B811L643242B is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing
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MB811L643242B
-10/-12/-15/-10L/-12L/-15L
288-Word
B811L643242B
32-bit
l64324
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PDF
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Untitled
Abstract: No abstract text available
Text: SONY. CXK58257ATM/AYM -7 5L L/1 -7 0 0L L /8 L /8 5/1 L L0 /1 0 L2 LL /1 2 L L 32768-word X 8-bit High Speed CMOS Static RAM D escription C X K 5 8 2 5 7 A T M /A Y M is a 256K bits, 32 ,768 w o rds by 8 bits, CMOS static RAM. It is suitable fo r portable and battery back-up
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CXK58257ATM/AYM
70L/85L/10L/12L
-70LL/85LL/10LL/12LL
32768-word
CXK58257ATM/AYM
CXK58257ATM
CXK58257AYM
CXK58257ATM/AYM-70L.
-70LL
CXK58257ATM/AYM-85L
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PDF
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Untitled
Abstract: No abstract text available
Text: QS6611 Preliminary Data Sheet Rev. 3.4 Q QS6611 lO/lOOBaseTX Symbol Transceiver Quality Semiconductor Inc. Preliminary Data Sheet Rev. 3.4 October 1996 DISTINCTIVE FEATURES • Low power all-CMOS design with Icc <120 mA for lOBaseT, Icc <100 mA for 100BaseT
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QS6611
100BaseT
AM78965/6
NS83223
00G3bSl
74bbflG3
00G3b22
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PDF
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Untitled
Abstract: No abstract text available
Text: OL/12L SONY. CXK58267ATM/AYM -70LV85L/1 -70LL/85LL71OLL/12LL 32768-word X 8-bit High Speed C M O S Static RAM D escription C X K 582 67A T M /A Y M is a 256K bits, 32768 words by 8 bits, CMOS static RAM. It is suitable fo r portable and battery back-up systems which
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CXK58267ATM/AYM
-70LV85L/1
OL/12L
-70LL/85LL71OLL/12LL
32768-word
CXK58267ATM
CXK58267AYM
CXK58267ATM
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PDF
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Untitled
Abstract: No abstract text available
Text: KM616V1000B, KM616U1000B Family CMOS SRAM Document Title 64K x16 bit Low Power and Low Voltage CMOS Static RAM Revision History History Draft Data Remark 0.0 Design target July 24, 1995 Advance 0.1 Initial draft August 12, 1995 Preliminary 1.0 April 13, 1996
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KM616V1000B,
KM616U1000B
100ns
KM616V1000B
KM616V1QQGB
KM616U1QQQB
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PDF
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Untitled
Abstract: No abstract text available
Text: TO SH IBA 2SK2882 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2- tz-M O S V 2SK2882 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 4 V Gate Drive Low Drain-Source On Resistance : Rd S (ON) = 0.08 il (Typ.)
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2SK2882
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PDF
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iC4013BP
Abstract: No abstract text available
Text: TC4013BP/BF C2MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC IC4013BP/TC4013BF DUAL D-TYPE FLIP FLOP T C 4 0 1 3 B P / B F contains two independent circuits of D type flip-flop. The input level applie'd to D A TA input are transferred to Q and Q" output by r is
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TC4013BP/BF
IC4013BP/TC4013BF
iC4013BP
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PDF
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Untitled
Abstract: No abstract text available
Text: MOSEL- VITELIC PRELIMINARY V104J232, V104J236 512K x 32, 512K x 36 SIMM Features Description m 524,288 x 32 bit or 524, 288 x 36 bit The V 104J232 Memory Module is organized as 52 4 ,2 8 8 x 32 bits in a 72-lead single-in-line module. The 51 2K x 32 memory module uses 16 MoselVitelic 256K x 4 DRAMs. The V104J236 is organized
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V104J232,
V104J236
104J232
72-lead
V104J232/236
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PDF
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MAJORITY LOGIC
Abstract: dual 5-Input Majority Logic Gate TC4530BP TC45 Dual 5 input majority logic gate
Text: C2MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC4530BP TC4530BP DUAL 5-INPUT MAJORITY LOGIC GATE The TC45 30BP i s g ate. dual 5 -in p u t m a jo rity Each m a j o r i t y not th e in p u t a t le v e l. lo g ic g ate "H " l e v e l i s T he p o l a r i t y
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TC4530BP
MAJORITY LOGIC
dual 5-Input Majority Logic Gate
TC45
Dual 5 input majority logic gate
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PDF
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TC5563APL-12
Abstract: No abstract text available
Text: 8,192 WORD X 8 BIT CMOS STATIC RAM [DESCRIPTION The TC5563APL is a 65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology, and operates from a single 5V supply. Advanced circuit techniques provide both high speed and low power features with a maximum operating current of 5mA/MHz
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OCR Scan
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TC5563APL
100ns/120ns/150ns.
TC5563APL--10,
TC5563APL-12
TC5563APL-15
DIP28-P-300B)
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PDF
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Untitled
Abstract: No abstract text available
Text: SDRAM Rev.1.0 May '98 64M bit Synchronous DRAM MITSUBISHI LSls M2V64S20BTP-7,-7L,-8,-8L,-8A,-10,-10L (4-BANK x 4194304-WORD x 4-BIT) M2V64S30BTP-7,-7L,-8,-8L,-8A,-10,-1 OL (4-BANK x 2097152-WORD x 8-BIT) M2V64S40BTP-7,-7L,-8,-8L,-8A,-10,-1 OL (4-BANK x 1048576-WORD x 16-BIT)
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M2V64S20BTP-7
4194304-WORD
M2V64S30BTP-7
2097152-WORD
M2V64S40BTP-7
1048576-WORD
16-BIT)
M2V64S20BTP
M2V64S30BTP
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PDF
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6V400
Abstract: LR7L
Text: Preliminary CMOS SRAM KM616V4000C, KM616U4000C Family Document Title 256Kx16 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No 0.0 0.1 History Draft Date Remark Initial draft January 1 3 ,1998 Advance June 12, 1998 Preliminary Revised
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OCR Scan
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KM616V4000C,
KM616U4000C
256Kx16
7Q/85ns
70/85/100ns
85/100ns
6V400
LR7L
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PDF
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