10000UNITS Search Results

10000UNITS Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
LMBT3946DW1T1G Abstract: 1N916 LMBT3946DW1T1 Text: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors The LMBT3946DW1T1 device is a spin–off of our popular SOT–23/SOT–323 three–leaded device. It is designed for general purpose amplifier applications and is housed in the SOT–363 six–leaded surface mount package. By putting two discrete devices in	Original	PDF	LMBT3946DW1T1 23/SOT LMBT3946DW1T1G 195mm 150mm 3000PCS/Reel 8000PCS/Reel OT-723 OD-723) LMBT3946DW1T1G 1N916
Untitled Abstract: No abstract text available Text: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors The LMBT3946DW1T1 device is a spin–off of our popular SOT–23/SOT–323 three–leaded device. It is designed for general purpose amplifier applications and is housed in the SOT–363 six–leaded surface mount package. By putting two discrete devices in	Original	PDF	LMBT3946DW1T1 23/SOTâ LMBT3946DW1T1G S-LMBT3946DW1T1G OT-363/SC-88 SC-88/SOT-363
Untitled Abstract: No abstract text available Text: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors The LMBT3946DW1T1 device is a spin–off of our popular SOT–23/SOT–323 three–leaded device. It is designed for general purpose amplifier applications and is housed in the SOT–363 six–leaded surface mount package. By putting two discrete devices in	Original	PDF	LMBT3946DW1T1 23/SOTâ LMBT3946DW1T1G SC-88/SOT-363
7p1 marking Abstract: ZXMP10A13F ZXMP10A13FTA ZXMP10A13FTC 10000Units Text: ZXMP10A13F 100V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = - 100V : RDS(on)= 1 ; ID = - 0.7A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes	Original	PDF	ZXMP10A13F ZXMP10A13FTA ZXMP10A13FTC 7p1 marking ZXMP10A13F ZXMP10A13FTA ZXMP10A13FTC 10000Units
7p1 marking Abstract: ZXMP10A13FTA Text: ZXMP10A13F 100V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = - 100V : RDS(on)= 1 ; ID = - 0.7A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes	Original	PDF	ZXMP10A13F ZXMP10A13FTA ZXMP10A13FTC 10000units 522-ZXMP10A13FTA ZXMP10A13FTA 7p1 marking
Untitled Abstract: No abstract text available Text: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors The LMBT3946DW1T1 device is a spin–off of our popular SOT–23/SOT–323 three–leaded device. It is designed for general purpose amplifier applications and is housed in the SOT–363 six–leaded surface mount package. By putting two discrete devices in	Original	PDF	LMBT3946DW1T1 23/SOTâ LMBT3946DW1T1G
LMBT3946DW1T1G Abstract: 1N916 LMBT3946DW1T1 cs_ sot-363 Text: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors The LMBT3946DW1T1 device is a spin–off of our popular SOT–23/SOT–323 three–leaded device. It is designed for general purpose amplifier applications and is housed in the SOT–363 six–leaded surface mount package. By putting two discrete devices in	Original	PDF	LMBT3946DW1T1 23/SOT LMBT3946DW1T1G Emitte10/14 SC-88/SOT-363 LMBT3946DW1T1G 1N916 cs_ sot-363
Untitled Abstract: No abstract text available Text: ZXM P10A13F 100V P-CHANNEL ENHANCEM ENT M ODE M OSFET SUM M ARY V BR DSS = - 100V : RDS(on)= 1 ; ID = - 0.7A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes	Original	PDF	P10A13F 13FTA