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    1002r4bn

    Abstract: APT*1002R4BN APT1002R4BN 1002rbn APT1002RBN
    Text: D TO-247 G APT1002RBN S POWER MOS IV 1000V 7.0A 2.00Ω 1002R4BN 1000V 6.5A 2.40Ω N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter Drain-Source Voltage


    Original
    PDF O-247 APT1002RBN APT1002R4BN 1002RBN 1002R4BN O-247AD 1002r4bn APT*1002R4BN 1002rbn APT1002RBN

    1001R6BN

    Abstract: APT1001R6BN 1002R4BN APT1002R4BN APT*1002R4BN APT1002RBN
    Text: D TO-247 G APT1001R6BN 1000V 8.0A 1.60Ω S POWER MOS IV 1002R4BN 1000V 6.5A 2.40Ω N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter Drain-Source Voltage


    Original
    PDF O-247 APT1001R6BN APT1002R4BN 1001R6BN 1002R4BN O-247AD 1001R6BN 1002R4BN APT*1002R4BN APT1002RBN

    902R4BN

    Abstract: APT902RBN APT1002R4BN 1002RBN 1002r4bn APT902R
    Text: A D V A N CED PO W ER Tec h n o lo g y O D APT1002RBN APT902RBN 1002R4BN APT902R4BN Ô s H Tw er m o s n a 1000V 900V 1000V 900V 7.0A 7.0A 6.5A 6.5A 2.00U 2.00U 2.400 2.40U N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: T_ = 25°C unless otherwise specified.


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    PDF APT1002RBN APT902RBN APT1002R4BN APT902R4BN 902RBN 1002RBN 902R4BN 1002R4BN APT1002R/902R/1002R4/902R4BN 1002r4bn APT902R

    APT902R4BN

    Abstract: No abstract text available
    Text: A dvanced P o w er Te c h n o l o g y ' O D O S POWER MOS IV' AFT1002RBN 1000V 7.0A 2.00Q APT902RBN 900V 7.0A 2.00Q 1002R4BN 1000V 6.5A 2.40Q APT902R4BN 900V 6.5A 2.40Q N -C H A NN EL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified.


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    PDF AFT1002RBN APT902RBN APT1002R4BN APT902R4BN 902RBN 1002RBN 902R4BN 1002R4BN G21bc APT1002R/902R/1002R4/902R4BN APT902R4BN

    APT1002R4BN

    Abstract: No abstract text available
    Text: A D V A N CED PO W E R Te c h n o l o g y OD APT1002RBN OS 1000V 7.0A 2.00Í1 1002R4BN 1000V 6.5A 2.40Í1 POWER MOS IV® N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS b All Ratings: Tc = 25°C unless otherwise specified.


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    PDF APT1002RBN APT1002R4BN 1002RBN 1002R4BN APT1002R/1002R4BN O-247AD

    Untitled

    Abstract: No abstract text available
    Text: A d van ced P o w er Te c h n o l o g y • O D O APT1002RBN APT902RBN 1002R4BN APT902R4BN s POWER MOS IVe 1000V 900V 1000V 900V 7.0A 7.0A 6.5A 6.5A 2.00Q 2.00Q 2.40Q 2.40Í2 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tr = 25°C unless otherwise specified.


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    PDF APT1002RBN APT902RBN APT1002R4BN APT902R4BN 902RBN 1002RBN 902R4BN 1002R4BN APT1002R/902R/1002R4/902R4BN O-247AD

    Untitled

    Abstract: No abstract text available
    Text: A d v a n ced P o w er Te c h n o l o g y O D APT1002RBNR 1000V 7.0A 2.000 1002R4BNR 1000V 6.5A 2.400 Os POWER MOS IV« UIS RATED N -C H A N N E L E N H A N CEM EN T M O D E HIGH VOLTAGE PO W ER M O SFETS All Ratings: T c = 25°C unless otherwise specified.


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    PDF APT1002RBNR APT1002R4BNR APT1002R4BNR MIL-STD-750 -247AD

    APT1002RBNR

    Abstract: No abstract text available
    Text: A d van ced P o w er Te c h n o l o g y O D O S APT1002RBNR 1002R4BNR 1000V 7.0A 2.00< > 1000V 6.5A 2.40Q POWER MOS IV UIS RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol ^DSS All Ratings: Tc = 25°C unless otherwise specified.


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    PDF APT1002RBNR APT1002R4BNR APT1002RBNR APT1002R4BNR STD-750 O-247AD

    1002RBN

    Abstract: SML1002RBN 1002r4bn 902R4BN
    Text: SEMELAB PLC bOE J> m a i3 3 1 fi? 0000tiG4 3fiD * $ 1 1 1 8 T ^ - i S MOS POWER 4 =FF= SML1002RBN 1000V 7.0A 2.00Q SML902RBN 900V 7.0A 2.0012 1002R4BN 1000V 6.5A 2.40Q SML902R4BN 900V 6.5A 2.4012 SEME LAB N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS


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    PDF 0000tiG4 SML1002RBN SML902RBN SML1002R4BN SML902R4BN 1002RBN 902R4BN 1002R4BN 902RBN O-247AD